The output stage in the circuit shown in Figure P 11.86 is a Darlington pair emitter-follower configuration. Assume
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Microelectronics: Circuit Analysis and Design
- 9. Design a biased-transistor circuit using VBB = Vcc= 10 V for a Q-point of Ic = 5 mA and VCE 4 V. Assume pc = 100. The design involves finding RB, RC, and the minimum power rating of the transistor. (The actual power rating should be greater.) Sketch the circuit.arrow_forwardGiven a D-MOSFET circuit used as an amplifier with the following parameter: IDSS=12mA and a transconductance of gm=3.2 mS. Determine the DC drain to source voltage VDS and the AC output voltage if Vin=500 mV.arrow_forward(ii) Calculate the RB, Rc, and the minimum power rating of the transistor (Note: the actual power rating should be greater).arrow_forward
- Question 2 Referring to Figure 2 and the following BJT parameters: B = 100, thermal voltage = 25 mV and VeE = 0.7 V. If v = (Mx10°)sin(wt) V where M is , 209384 . calculate the instantaneous positive peak collector voltage, Ve(peak). Explain the effect of CE on the BJT DC operating point and the small- signal voltage gain. Vcc 10V Rc $4.7 kN R 47 ko3 HE vo B-100 Vehermar=25mv R. 10 kn R $ika T10UF GND Figure 2arrow_forwardA Bipolar junction Transistor with curreat amplification factor being 100, Input Base current is 50μA. Collector voltage is 10 V and biasing voltage being +20 V. Find followings a. Collector current b. Resistance (R1) c. Collector voltage , Emitter voltage , Base Voltage & Collector-Emitter Voltage.arrow_forwardDesign a voltage divider biased CE stage with emitter degeneration. That stage should support a voltage gain of 5 and an input impedance larger than 3 KOhms with a bias current of 0.5 mA. Assume Beta=100, Is = 5e-17. Neglect the early voltage effect. You also need to provide values for the operating point of this transistor. Find the output resistance of this stage if the early voltage = 20 V.arrow_forward
- Explain how you can find the common emitter de current gain, B, and the common emitter ac current gain, hre, from the common emitter output characteristics of an npn transistor. You need to draw typical output characteristics in scales and provide numerical calculations to support your explanation.arrow_forward2 a) i) Draw typical output characteristics of a common emitter npn transistor and clearly identify the active, saturation, and cut off regions on your drawing. ii) Explain how you can find the common emitter de current gain, B, and the common emitter ac current gain, hre, from the common emitter output characteristics of an npn transistor. You need to draw typical output characteristics in scales and provide numerical calculations to support your explanation.arrow_forward5. For a BJt Vt is 5 V, Re = 1200 ohm and bias current le is 15 mA. What is the voltage gain ?arrow_forward
- Question What must be the minimum power rating for the external pass transistor used with a 7815 regulator in a circuit such as that shown in Figure below? The input voltage is 30 V and the load resistance is 10 N. The maximum internal current is to be 700 mA. Assume that there is no heat sink for this calculation. Keep in mind that the use of a heat sink increases the effective power rating of the transistor and you can use a lower rated transistor. Qext VIN Rext VOUT C 7815 - RLarrow_forwardDraw, Illustrate and label your schematic diagram before solving the problem. 3) Given an Emitter-Stabilize Biased transistor circuit with beta DC is 250,Base resistor is 150 ohms, collector resistor is 1.5k ohms ,emitter resistor is 500 ohms ,emitter voltage supply is -5v and Voltage at common collector is +28V,Voltage at Base-emitter junction is 0.7v,. Determine Base current, Collector current and Voltage at collector-emitter junction.arrow_forwardConsider class-A emitter follower circuit shown in the figure below. The circuit parameters are V+ = 24 V, V- = -24 V, and RL = 2000. The transistor parameters are B = 50, VBE(on) = 0.7 V, and VcE(sat) = 0.2 V. The output voltage is to vary between +20 V and -20 V. The minimum current in Q1 is to be iej = 20 mA. For vo = 0, find the dissipated in the first transistor Qr. power RL wwliarrow_forward
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