Consider the BiCMOS diff-amp in Figure 11.44 , biased at
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Microelectronics: Circuit Analysis and Design
- Time left 1:46:17 A bipolar junction transistor is described in the figure below. The transistor is implemented in the circuit with Vcc, Rc, and RB equal to 16 volts, 2k, and 10kn. Determine the value of Vout if Vin = 1.1V. V... in RB B Vec Ro V E outarrow_forwardA base current of 50µA is applied to the transistor in the given figure , and a voltage of 5V is dropped across Rc. Determine the Boc of the transistor. Rc 1.0 kn Vcc 100 kn VBBarrow_forward4. For the transistor in the figure shown below, the parameters are ß = 100 and VÀ = ∞. a. Design the circuit such that lEQ = 1mA and the Q-pt is in the center of the dc load line. b. If the peak-to-peak sinusoidal output voltage is 4V, determine the peak-to-peak sinusoidal signals at the base of the transistor and the peak-to-peak value of Vs. If the load resistor R₁ = 1kQ is connected to the output through a coupling capacitor, determine the peak-to-peak value in the output voltage, assuming vs is equal to the value determined in part (b). Vcc=+10 V www Rs = 0.7 kΩ Cc www RB RE voarrow_forward
- Electrical Engineering Please solve ASAP 1. The figure shows a CE power amplifier in which the collector resistor serves also as the load resistor. Assume Boc = Be = 120. +12 V a) Determine the de Q-point (Icq and Vcr). Re 470 1 b) Determine the voltage gain and the power gain. R 12 kn c) The Quiescent power. 10 uF d) The i'p signal power 10 F RE 220 e) The output signal power. 400 mV pp 1.0 kHz ) The efficiency of the power amplifier. R2 4.7 k Ru 120 2 10 uF 470 1 Ba- Boc= 120arrow_forward6. A BJT current source is designed as shown below, where QREF= Q₁. If IREF= 5 mA, determine Rp to have I₁= 2 mA (neglect the base current). 4. /REF QREF Vcc + Ка Rparrow_forward. Design a fixed bias-transistor circuit using V = Vcc = 10 V for a Q-point of Iç = 5 mA and Va 4 V. Assume Boc = 100.The design involves finding R, and Rc. inakomeont thot one is hiasedarrow_forward
- You can find answers, choose true / false, and then correct the error 1. The quiescent power dissipation occurs when the maximum signal is applied. 2. Efficiency is the ratio of output signal power to total power. 3. Each transistor in a class B amplifier conducts for the entire input cycle. 4. A current mirror is implemented with a laser diode. 5. Darlington transistors can be used to increase the input resistance of a class AB amplifier. 6. The output of a class C amplifier is a replica of the input signal.arrow_forwardFor a common-collector amplifier, RE = 100N, r. = 10N, and 30ac = 150. If a 10 mV signal is applied to the base , the output signal is approximately 10 mV 150 mV 1.5 V 100 mVarrow_forwardDesign the bias circuit to give aQ-point of IC = 20 μA and VC E = 0.90 V ifthe transistor current gain is βF = 50 and VB E =0.65 V. What is the Q-point if the current gain ofthe transistor is actually 125?arrow_forward
- 5. The fixed bias circuit shown in figure uses a silicon transistor with VBE = 0.7V. (a) Find the collector current, lc, and voltage VCE, if ß of transistor is 60. (b) (b) Find Ic and VCE if B changes to 80. +Vcc (9V) 60k 0.5k + VCE VBEarrow_forward5V B OV OV For all the MOSFETS assume Vth=1V and k =50 mA/V² R₁ = 4700 Ao M₁ M₂ B Indicate and verify the state of each MOSFET and Vo for the following input combinations. Fill out the table for each assumed state of the MOSFET for every input combination. Use Rds(on) approximation for linear operation and three significant figures for the voltages. M1 is assumed to be in saturation. If Vgs = 2 V, Vds = 4V, Vds > Vgs - Vth 4>2-1 4> 1 (ok) Vgs > Vth (2>1) A M2 state M3 state V. 0 OV 5 V R₂ = 560Ω 5V M1 state M3arrow_forwardThe term "Bipolar" in Bipolar Junction Transistor (BJT) refers to O Two diodes O Two resiIstances O Two junctions O Two polarity carriers (electrons & holes) If the value of dc alpha is 0.5, then the value of dc beta of a transistor is 0.1 O 10 O 100arrow_forward
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