Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
expand_more
expand_more
format_list_bulleted
Question
Chapter 11, Problem D11.5P
(a)
To determine
The values of the resistors for the given specifications.
(b)
To determine
The value of
(c)
To determine
The value of differential mode and the common mode input resistances.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
........
(Figure-1)
R.
RB= 380kN,Rc= 1kN
B = 100, VBB = Vcc=12V
RB
ww
Vec
CC
.........
I,
V CE
СЕ
V
ВЕ
BB
Q-1-b) Describe briefly the input / output characteristics and application of Common
Emitter BJT Configuration
The n-channel JFET and the D-MOSFET have very similar I-V output characteristics. Which of these two structures can be operated in enhancement mode and why is that possible.
4. For the transistor in the figure shown below, the parameters are ß = 100 and VÀ = ∞.
a. Design the circuit such that lEQ = 1mA and the Q-pt is in the center of the dc load line.
b. If the peak-to-peak sinusoidal output voltage is 4V, determine the peak-to-peak sinusoidal
signals at the base of the transistor and the peak-to-peak value of Vs.
If the load resistor R₁ = 1kQ is connected to the output through a coupling capacitor,
determine the peak-to-peak value in the output voltage, assuming vs is equal to the value
determined in part (b).
Vcc=+10 V
www
Rs = 0.7 kΩ
Cc
www
RB
RE
vo
Chapter 11 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 11 - The circuit parameters for the differential...Ch. 11 - Consider the de transfer characteristics shown in...Ch. 11 - Prob. 11.1CSPCh. 11 - Consider the diff-amp described in Example 11.3 ....Ch. 11 - Prob. 11.4EPCh. 11 - Prob. 11.1TYUCh. 11 - Prob. 11.2TYUCh. 11 - Assume the differential-mode gain of a diff-amp is...Ch. 11 - Prob. 11.5EPCh. 11 - Consider the diff-amp shown in Figure 11.15 ....
Ch. 11 - Prob. 11.7EPCh. 11 - Prob. 11.4TYUCh. 11 - Prob. 11.5TYUCh. 11 - The parameters of the diff-amp shown in Figure...Ch. 11 - For the differential amplifier in Figure 11.20,...Ch. 11 - The parameters of the circuit shown in Figure...Ch. 11 - The circuit parameters of the diff-amp shown in...Ch. 11 - Consider the differential amplifier in Figure...Ch. 11 - The diff-amp in Figure 11.19 is biased at IQ=100A....Ch. 11 - Prob. 11.10TYUCh. 11 - The diff-amp circuit in Figure 11.30 is biased at...Ch. 11 - Prob. 11.11EPCh. 11 - Prob. 11.12EPCh. 11 - Prob. 11.11TYUCh. 11 - Prob. 11.12TYUCh. 11 - Redesign the circuit in Figure 11.30 using a...Ch. 11 - Prob. 11.14TYUCh. 11 - Prob. 11.15TYUCh. 11 - Prob. 11.16TYUCh. 11 - Prob. 11.17TYUCh. 11 - Consider the Darlington pair Q6 and Q7 in Figure...Ch. 11 - Prob. 11.14EPCh. 11 - Consider the Darlington pair and emitter-follower...Ch. 11 - Prob. 11.19TYUCh. 11 - Prob. 11.15EPCh. 11 - Consider the simple bipolar op-amp circuit in...Ch. 11 - Prob. 11.17EPCh. 11 - Define differential-mode and common-mode input...Ch. 11 - Prob. 2RQCh. 11 - From the dc transfer characteristics,...Ch. 11 - What is meant by matched transistors and why are...Ch. 11 - Prob. 5RQCh. 11 - Explain how a common-mode output signal is...Ch. 11 - Define the common-mode rejection ratio, CMRR. What...Ch. 11 - What design criteria will yield a large value of...Ch. 11 - Prob. 9RQCh. 11 - Define differential-mode and common-mode input...Ch. 11 - Sketch the de transfer characteristics of a MOSFET...Ch. 11 - Sketch and describe the advantages of a MOSFET...Ch. 11 - Prob. 13RQCh. 11 - Prob. 14RQCh. 11 - Describe the loading effects of connecting a...Ch. 11 - Prob. 16RQCh. 11 - Prob. 17RQCh. 11 - Prob. 18RQCh. 11 - (a) A differential-amplifier has a...Ch. 11 - Prob. 11.2PCh. 11 - Consider the differential amplifier shown in...Ch. 11 - Prob. 11.4PCh. 11 - Prob. D11.5PCh. 11 - The diff-amp in Figure 11.3 of the text has...Ch. 11 - The diff-amp configuration shown in Figure P11.7...Ch. 11 - Consider the circuit in Figure P11.8, with...Ch. 11 - The transistor parameters for the circuit in...Ch. 11 - Prob. 11.10PCh. 11 - Prob. 11.11PCh. 11 - The circuit and transistor parameters for the...Ch. 11 - Prob. 11.13PCh. 11 - Consider the differential amplifier shown in...Ch. 11 - Consider the circuit in Figure P11.15. The...Ch. 11 - Prob. 11.16PCh. 11 - Prob. 11.17PCh. 11 - For the diff-amp in Figure 11.2, determine the...Ch. 11 - Prob. 11.19PCh. 11 - Prob. D11.20PCh. 11 - Prob. 11.21PCh. 11 - The circuit parameters of the diff-amp shown in...Ch. 11 - Consider the circuit in Figure P11.23. Assume the...Ch. 11 - Prob. 11.24PCh. 11 - Consider the small-signal equivalent circuit of...Ch. 11 - Prob. D11.26PCh. 11 - Prob. 11.27PCh. 11 - A diff-amp is biased with a constant-current...Ch. 11 - The transistor parameters for the circuit shown in...Ch. 11 - Prob. D11.30PCh. 11 - For the differential amplifier in Figure P 11.31...Ch. 11 - Prob. 11.32PCh. 11 - Prob. 11.33PCh. 11 - Prob. 11.34PCh. 11 - Prob. 11.35PCh. 11 - Prob. 11.36PCh. 11 - Consider the normalized de transfer...Ch. 11 - Prob. 11.38PCh. 11 - Consider the circuit shown in Figure P 11.39 . The...Ch. 11 - Prob. 11.40PCh. 11 - Prob. 11.41PCh. 11 - Prob. 11.42PCh. 11 - Prob. 11.43PCh. 11 - Prob. D11.44PCh. 11 - Prob. D11.45PCh. 11 - Prob. 11.46PCh. 11 - Consider the circuit shown in Figure P 11.47 ....Ch. 11 - Prob. 11.48PCh. 11 - Prob. 11.49PCh. 11 - Prob. 11.50PCh. 11 - Consider the MOSFET diff-amp with the...Ch. 11 - Consider the bridge circuit and diff-amp described...Ch. 11 - Prob. D11.53PCh. 11 - Prob. 11.54PCh. 11 - Prob. 11.55PCh. 11 - Consider the JFET diff-amp shown in Figure P11.56....Ch. 11 - Prob. 11.57PCh. 11 - Prob. 11.58PCh. 11 - Prob. D11.59PCh. 11 - The differential amplifier shown in Figure P 11.60...Ch. 11 - Prob. 11.61PCh. 11 - Consider the diff-amp shown in Figure P 11.62 ....Ch. 11 - Prob. 11.63PCh. 11 - The differential amplifier in Figure P11.64 has a...Ch. 11 - Prob. 11.65PCh. 11 - Consider the diff-amp with active load in Figure...Ch. 11 - The diff-amp in Figure P 11.67 has a...Ch. 11 - Consider the diff-amp in Figure P11.68. The PMOS...Ch. 11 - Prob. 11.69PCh. 11 - Prob. 11.70PCh. 11 - Prob. D11.71PCh. 11 - Prob. D11.72PCh. 11 - An all-CMOS diff-amp, including the current source...Ch. 11 - Prob. D11.74PCh. 11 - Consider the fully cascoded diff-amp in Figure...Ch. 11 - Consider the diff-amp that was shown in Figure...Ch. 11 - Prob. 11.77PCh. 11 - Prob. 11.78PCh. 11 - Prob. 11.79PCh. 11 - Prob. 11.80PCh. 11 - Consider the BiCMOS diff-amp in Figure 11.44 ,...Ch. 11 - The BiCMOS circuit shown in Figure P11.82 is...Ch. 11 - Prob. 11.83PCh. 11 - Prob. 11.84PCh. 11 - For the circuit shown in Figure P11.85, determine...Ch. 11 - The output stage in the circuit shown in Figure P...Ch. 11 - Prob. 11.87PCh. 11 - Consider the circuit in Figure P11.88. The bias...Ch. 11 - Prob. 11.89PCh. 11 - Consider the multistage bipolar circuit in Figure...Ch. 11 - Prob. D11.91PCh. 11 - Prob. 11.92PCh. 11 - For the transistors in the circuit in Figure...Ch. 11 - Prob. 11.94PCh. 11 - Prob. 11.95PCh. 11 - Prob. 11.96PCh. 11 - Consider the diff-amp in Figure 11.55 . The...Ch. 11 - The transistor parameters for the circuit in...
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- 5. The fixed bias circuit shown in figure uses a silicon transistor with VBE = 0.7V. (a) Find the collector current, lc, and voltage VCE, if ß of transistor is 60. (b) (b) Find Ic and VCE if B changes to 80. +Vcc (9V) 60k 0.5k + VCE VBEarrow_forwardDetermine VB, VE, VC, VCE, IB, IE, and IC in Figure. The 2N3904 is a general purpose transistor with a typical BDC 200 Vcc +30 V WWII VCE VB R₁ • 22 ΚΩ IC(mA) Chọn... * Chọn... * IB(UA) Chọn... * IE(MA) Chọn... ◆ Chọn... * Chọn... * Chọn... * VE VC R₂ ´ 10 ΚΩ www Rc 1.0 ΚΩ 2N3904 PDC=200 RE 1.0 ΚΩarrow_forward. Design a fixed bias-transistor circuit using V = Vcc = 10 V for a Q-point of Iç = 5 mA and Va 4 V. Assume Boc = 100.The design involves finding R, and Rc. inakomeont thot one is hiasedarrow_forward
- As a maintenance engineer in a semiconductor company, you are given a task to replace the current version of dc-biasing circuit for a faulty tester machine. This dc-biasing circuit used an n-channel JFET as shown in Figure 2. Re-design a new dc-biasing circuit using an n-channel D-MOSFET that can produce a similar output current, IDQ as the previous circuit. Your tasks are: (i) Calculate the operating point (IDQ and VGSQ) of the dc-biasing circuit in Figure 2. Then sketch the JFET network transfer curve (ID and VGS). (ii) Without changing the circuit configuration, calculate the values of source resistor, RS and RB to achieve this objective. Determine the commercial value of the new RS and RB. For cost reduction reason, the values of RD, RA and VDD should be maintained. The chosen D-MOSFET has a maximum drain current of 8 mA and gate-source cutoff voltage of – 15V. The new RS value should be 3 times larger than the old RS used in the JFET network to compensate for the high…arrow_forwardDetermine the DC bias values using DC equivalent circuits (in order of VE, VB, VC)arrow_forwardThe fixed bias circuit shown in figure uses a silicon transistor with VBE = 0.7V. 10 (a) Find the collector current, IC, and voltage VCE, if ß of transistor is 60. (b) Find IC and VCE if B changes to 80. What conclusions may be drawn? +Vcc (9V) 60k 0.5k + VCE VBEarrow_forward
- Using the re model circuit, determine the total voltage gain for the BJT circuit shown below. Show the details of your work. 22V ... 5.6k0 330k Vo + 10UF-POL B = 80 1200 10UF-POL To = 40 kN 2N2221 6.8k) Vs 4700 22UF-POLarrow_forwardQ-3. Find the drain-source voltage, Vos, for the E- MOSFET circuit given below. The device parameters are: Ioss = 4 mA and Vm = 2 V. +15V Rp- 2k 4M R1 + Vps 2M R2arrow_forwardThe base-biased circuit in the figure is subjected to an increase in junction temperature from 25°C to 75°C. If βdc = 100 at 25°C and 150 at 75°C, Determine the base current Ib in microampere. Show complete solution. (Answer must in 2 decimal places)arrow_forward
- Sketch the de load line, quiescent collector current, quiescent voltsge, input power, output power and maximum efficiency of the circuit shown an Figure. The input results in a base current of 5 mA peak to peak What maximum output power can be delivered by the circuit, if the input voltage is changed resulting in a base current of 10mA peak to peak and hence find the maximum etficiency. cc=15 V R =18 2 -25arrow_forwardFrom the figure shown, when S1 is at 1 : up position; the following statement is not correct except: (a) Collector-emitter voltage of Q1 is approximately zero (b) the LED will illuminate (c) the base voltage of Q2 is equal to 9 V (d) (b) and (c)arrow_forwardQuestiona. In an experiment the voltage required for the device is 9V dc but unfortunately the transformer available is of 220-6 Vdc. Design a circuit which can power the device (use only methods that we have studied excluding Zener diode)b. Explain the behavior of the following circuits if the input signal is triangular wave of peak voltage 5V and the biasing battery of 3Varrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSONDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage LearningProgrammable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
- Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill EducationElectric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSONEngineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,
CMOS Tech: NMOS and PMOS Transistors in CMOS Inverter (3-D View); Author: G Chang;https://www.youtube.com/watch?v=oSrUsM0hoPs;License: Standard Youtube License