Consider the Darlington pair and emitter-follower portions of the circuit in Figure 11.46 . The parameters are:
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Microelectronics: Circuit Analysis and Design
- (ii) Calculate the RB, Rc, and the minimum power rating of the transistor (Note: the actual power rating should be greater).arrow_forwardTime left 1:46:17 A bipolar junction transistor is described in the figure below. The transistor is implemented in the circuit with Vcc, Rc, and RB equal to 16 volts, 2k, and 10kn. Determine the value of Vout if Vin = 1.1V. V... in RB B Vec Ro V E outarrow_forwardKindly Show complete solutution and put diagrams if needed In which region is the transistor being operated for each of the following sets ofDC transistor terminal voltages (with respect to ground)?a) Collector: -7.32 V Base: -2.75 V Emitter: -2.07 Vb) Collector: 10.55 V Base: 9.89 V Emitter: 9.65 Varrow_forward
- Draw, Illustrate and label your schematic diagram before solving the problem. 3) Given an Emitter-Stabilize Biased transistor circuit with beta DC is 250,Base resistor is 150 ohms, collector resistor is 1.5k ohms ,emitter resistor is 500 ohms ,emitter voltage supply is -5v and Voltage at common collector is +28V,Voltage at Base-emitter junction is 0.7v,. Determine Base current, Collector current and Voltage at collector-emitter junction.arrow_forwardKnowing the equation of collector current IC for the transistor amplifier circuit, please calculate the current and voltage stabilization factors. Rc=2000ohm Re=500ohm Rb=500ohm Rb=1000ohm Beta0=200arrow_forward1. For the circuit in Figure 1: a) Calculate the input and output power if the input signal results in a base current of 5 mA rms. b) Calculate the input power dissipated by the circuit if Rg is changed to 1.5 kN. c) What maximum output power can be delivered by the circuit if RB is changed to 1.5 kN? d) If the circuit is biased at its center voltage and center collector operating point, what is the input power for a maximum output power of 1.5 W? +Vcc (18 V) Rc = 16 2 RB 1.2 k2 V. B - 40 100 µF Figure 1arrow_forward
- Q1:- find the emitter, base and collector currents and VE. (let any parameters if you need). + Vcc=6 V 2 k2 530 k2arrow_forwardFor the common emitter configuration, the current amplification factor (B) is 100. Calculate the current amplification factor (a): O a. 0.99 O b.0.97 O c.0.090 O d. 0.95arrow_forwardQUESTION 16: For the transistors in the circuit in Figure 11.32, the circuit parameters V* = 1.8V, V = −1.8V, and IQ = 155 μA. The transistor parameters are: k'n = 100 µA/V², k'p = 40 µA/V², VĨN = 0.3V, Vpp = −0.3V, (W/L)n = 8, (W/L)p = 10, λp = 35 mV¯¹, and λñ = 27 mV¯¹. Determine the small signal differential-mode voltage gain, Ad ro2₂ (k)| Format: 666.3325280404 704 (kn) Format: 583.38844987004 Ad Format: 73.235927554867 M₁ V10- ip3 M3 fiDi M₁ V+ V™ lo iD2 M₂ iD4 -OVO V₂arrow_forward
- 2. The parameters of the transistor as shown in the figure below are ß = 100 and VA = 100V. a. Find the dc voltages at the base and emitter terminals. b. Find Rc such that VCEQ = 3.5V. c. Assuming Cc and CE act as short circuits, determine the small-signal voltage gain Av = Vo/Vs. d. Repeat part (c) if a 5000 source resistor is in series with the vs signal source. V+ = +5 V Rs = 100 £2 www Us Cc RB = 10 ΚΩ I= Iausmi 0.35 mA www RC -000 V=-5 V CEarrow_forwarda) The n-channel JFET and the D-MOSFET have very similar I-V output characteristics. Which of these two structures can be operated in enhancement mode and why is that possible?arrow_forward4. Common-collector amplifiers do not have voltage gain but still provide power gain. explain?arrow_forward
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