9. Design a biased-transistor circuit using VBB = Vcc= 10 V for a Q-point of Ic = 5 mA and VCE 4 V. Assume pc = 100. The design involves finding RB, RC, and the minimum power rating of the transistor. (The actual power rating should be greater.) Sketch the circuit.

IDSS=8mA , VP =-4VTo help plot the DC load line VGS=VG-IDRSa)Attach a Plot of JFET Characteristic Curve as shown in Figureb)What is the approximate VGSQ?c)What is the approximate IDQ in mA?d)Determine source voltage VS.e)Calculate the drain voltage VD.f)Calculate the drain-to-source voltage VDS.

Question: 8. With the emitter bias shown, a reasonable assumption for troubleshooting work is that the VcC a. base voltage =+1 V +15 V b. emitter voltage = +5 V RC 3.9 k2 c. emitter voltage =-1 V d. collector voltage = Vcc RB 68 kQ %3D RE 7.5 kQ VEE -15 V

with the aid of a diagram describe a simple common emitter circuit with npn bipolar transitor and discus the relationship between base emitter voltage and base current

The input voltage of a Boost converter is 10V, the duty cycle of the boost converter is 0.25. If a 10- ohm resistor load is connected to the output; what are the average current flowing in the MOSFET and the diode? what is the max voltage stress on the MOSFET and the diode?

1. Given:VS1: -1 voltsVS2: 24 voltsB=beta: 150RE: 330 ohmsRC: 750 ohmsVC: ? volts

2. Determine the VCB (i.e., voltage difference between collector C and base B) in the transistor circuit shown in the figure below. The transistor is silicon type (i.e., VBE is 0.7V) and has current gain hEE- 150. (Assume the transistor is working on active region) Rc 100 2 RB 10V Vcc 10 k2 VBR = 5V

Discuss High level modulator: circuit diagram and operation - Collector modulator

........ (Figure-1) R. RB= 380kN,Rc= 1kN B = 100, VBB = Vcc=12V RB ww Vec CC ......... I, V CE СЕ V ВЕ BB Q-1-b) Describe briefly the input / output characteristics and application of Common Emitter BJT Configuration

4. For the circuit shown in Figure, determine IC and VCB. Assume the transistor to be of Germanium.