The diff-amp configuration shown in Figure
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Microelectronics: Circuit Analysis and Design
- In the circuit given in the figure, Vcc = 15 V, R1 = R2 = 10kΩ, RE = 1KΩ, RL = 0.5kΩ and transistor parameters are given as VBE = 0.7V, ßdc = ß0 = 100. a. Calculate the values of DC bias currents and voltages (IBQ, ICQ and VCEQ). b. Draw the small signal equivalent circuit of the circuit using the hybrid model of the transistor. c. Derive the input impedance expression of the circuit and calculate its value. d. Derive the AVI and AVG voltage gain expressions and calculate their values. e. Derive the current gain expression AI = I0 / Ii and calculate its value. Compare this value you have calculated with the value you will calculate using the expression Aİ = Zi AVI / RL.arrow_forwardThe transistor parameters for the circuit in Figure P11.9 are: B = 100, VBE (On) = 0.7 V, and VA = ∞o. (a) Determine RE such that IE = 150 μΑ. (b) Find Ad, Acm, and CMRRB for a one-sided output at vo2. (c) Determine the differential- and common-mode input resistances. Rc-50 k Rg = 0.5 kΩ www VI www 21 Figure P11.9 +10 V VOLVO2 IE RE -10 V ? Rc = 50 kΩ 22 Rg = 0.5 kΩ ww S'arrow_forwardcircuits by using the small signal models of the transistor. Assume the Early voltage of the transistors are infinitely large. Calculate the small-signal input and output impedances of the following Vcc R1 R1 Rout VB RE Rin R2arrow_forward
- Instruction/s: Draw, Illustrate and label your schematic diagram before solving the problem.2.) Given a Collector -Feedback Biased transistor circuit with voltage at common collector is +10v ,base resistor is 100k ohms, Collector resistor is 10k ohms and Base current is 8.38 micro ampere, ,Voltage at Base-emitter junction is 0.7v. Determine Beta DC , Collector current and Voltage at collector-emitter junction. These might help as a guide to answer the problem...arrow_forwardQ1. (a) Consider the amplifier circuit in Figure Q1(a). Given the following: RI = 100 k2 R2 = 56 kN Rc =2 k2 Vcc = +8 V Assume the transistor has B = 100 and VBE(on) = 0.7 V. You may neglect Early effect and use VT = 26 mV. (i) Draw the DC equivalent circuit, then determine Iç and VCE. Draw the AC equivalent circuit using re model. Based on this, determine the parameters Av, Rin and Rout. (ii) Vcc Rc R1 R2 C3 Vout C2 Ci Vin Figure Q1(a)arrow_forwardFigure 1(a) shows a series fed class A amplifier circuit. In order to achieve the maximum efficiency, the Q point must be located at the center of the DC load line as shown in Figure 1(b). This generates the maximum output current swing of Icmax (p – p) RC and the maximum output voltage swing is VCEmax(p – p) = Vcc Assume that the maximum input de power is (1 Vcc Pimax(dc) = Vcc!cQ(max)=Vcc \2° Rc. 2Rc Find the maximum efficiency, 7 of this circuit.arrow_forward
- The DC Current Gain of a Transistor is Select one: a. Ratio of Collector Current to Base Current b. Ratio of Base Current to Collector Current c. Ratio of Emitter Current to Collector Current d. Ratio of Base Current to Emitter Currentarrow_forwardDetermine the DC bias values using DC equivalent circuits (in order of VE, VB, VC)arrow_forward2 a) i) Draw typical output characteristics of a common emitter npn transistor and clearly identify the active, saturation, and cut off regions on your drawing. ii) Explain how you can find the common emitter de current gain, B, and the common emitter ac current gain, hre, from the common emitter output characteristics of an npn transistor. You need to draw typical output characteristics in scales and provide numerical calculations to support your explanation.arrow_forward
- VR2 (t) voltage will be calculated by analyzing the circuit in Figure 2 with a non-linear element using the Small Signal Analysis method. For this purposea) Find the operating point VkQ, IkQ voltage and current values of the nonlinear element.b) Linearize the non-linear element at the operating point.c) Find the voltage VR2 (t) by calculating the effect of the variable source using the linear model.arrow_forwardOpen with v Consider class-A emitter follower circuit shown in the figure below. The circuit parameters are V+ = 24 V, V- = -24 V, and RL = 2000. The transistor parameters are B = 50, VBElon) = 0.7 V, and VCElsat) = 0.2 V. The output voltage is to vary between +20 V and -20 V. The minimum current in Q1 is to be ie1 = 20 mA. For vo = 0, find the power dissipated in the first transistor Q1- V+arrow_forwardExplain how you can find the common emitter de current gain, B, and the common emitter ac current gain, hre, from the common emitter output characteristics of an npn transistor. You need to draw typical output characteristics in scales and provide numerical calculations to support your explanation.arrow_forward
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