Redesign the circuit in Figure 11.30 using a Widlar current source and bias voltages of ± 5 V . The bias current I Q is to be no less than 100 μ A and the total power dissipated in the circuit (including the current-source circuit) is to be no more than 10 mW . The diff-amp transistor parameters are the same as in Exercise Ex 11.10 . The circuit is to provide a minimum loading effect when a second stage with an input resistance of R = 90 k Ω is connected to the diff-amp. Determine the differentialI mode voltage gain for this circuit. (Ans. R 1 = 10.3 k Ω , R E = 0.571 k Ω , A d = 158 ).
Redesign the circuit in Figure 11.30 using a Widlar current source and bias voltages of ± 5 V . The bias current I Q is to be no less than 100 μ A and the total power dissipated in the circuit (including the current-source circuit) is to be no more than 10 mW . The diff-amp transistor parameters are the same as in Exercise Ex 11.10 . The circuit is to provide a minimum loading effect when a second stage with an input resistance of R = 90 k Ω is connected to the diff-amp. Determine the differentialI mode voltage gain for this circuit. (Ans. R 1 = 10.3 k Ω , R E = 0.571 k Ω , A d = 158 ).
Solution Summary: The author explains the design parameters of the circuit using a Widlar current source to meet the specifications.
Redesign the circuit in Figure 11.30 using a Widlar current source and bias voltages of
±
5
V
. The bias current
I
Q
is to be no less than
100
μ
A
and the total power dissipated in the circuit (including the current-source circuit) is to be no more than
10
mW
. The diff-amp transistor parameters are the same as in Exercise
Ex
11.10
. The circuit is to provide a minimum loading effect when a second stage with an input resistance of
R
=
90
k
Ω
is connected to the diff-amp. Determine the differentialI mode voltage gain for this circuit. (Ans.
R
1
=
10.3
k
Ω
,
R
E
=
0.571
k
Ω
,
A
d
=
158
).
b) Refer to BJT cascade amplifier in Figure Q2, determine the de bias voltages and collector
current for each stage.
11.13 The i-v characteristic of an n-channel
enhancement MOSFET is shown in Figure P11.13(a);
a standard amplifier circuit based on the n-channel
MOSFET is shown in Figure P11.13(b). Determine the
quiescent current ino and drain-to-source voltage vs
2.0
I= 25°C
1.8
1.6
Vas10 V-
-9V-
1.4
1.2
8V-
1.0
0.8
7V-
0.6
0.4
5 V=
0.2
3 V-
1.0
2.0
3.0
4.0
5.0
6.0 7.0
8.0
9.0
10
Drain-source voltage vps. V
(a)
Rp
VGD
VDD
VGS
Va
Drain current ip, A
Qa: A transistor dissipates 50W in an ambient temperature of 60°C, the thermal resistances
are 0-0.5 °CW¹, 8ca-4 °CW. Determine the junction temperature without a heat
sink. Determine the thermal resistance of the heat sink to avoid the junction
temperature exceeding 180°C.
)
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