Redesign the circuit in Figure 11.30 using a Widlar current source and bias voltages of
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Microelectronics: Circuit Analysis and Design
- determine transistor biasing (terminal voltages), current gain and voltage gainarrow_forwardQa: A transistor dissipates 50W in an ambient temperature of 60°C, the thermal resistances are 0-0.5 °CW¹, 8ca-4 °CW. Determine the junction temperature without a heat sink. Determine the thermal resistance of the heat sink to avoid the junction temperature exceeding 180°C. )arrow_forwardA) Find and draw the equivalent re circuit model. Calculate the voltage gain.arrow_forward
- QUESTION 12: The differential amplifier shown in Figure P11.60 has a pair of pnp bipolars as input devices and a pair of npn bipolars connected as an active load. The circuit is biased by Io=0.24 mA, and the transistor parameters are ß = 80 , VẬP=90 V, and VAN = 115 V. (a) Determine Io such that the de currents in the diff-amp are balanced. (b) Find the open-circuit differential-mode voltage gain. (c) Determine the differential-mode voltage gain if a load resistance R1 = 260 k2 is connected to the output. Io (HA) Format : 4.595 Ad (open circuit) Format : 4594.5 Ag (closed loop) Format : 796.4 V+ Q2 Oa 어 RL Q3 Q4 V-arrow_forwardDescribe the working principles of Bipolar Junction Transistor (BJT): Study of Single Stage Transistor Common Emitter Amplifierarrow_forwardExplain the transistor amplification action with drawing figure and examplesarrow_forward
- How collector current in BJT depend on different parameter. Describe how collector current change due o chnage in Ico.arrow_forwardQ1. (a) Consider the amplifier circuit in Figure Q1(a). Given the following: RI = 100 k2 R2 = 56 kN Rc =2 k2 Vcc = +8 V Assume the transistor has B = 100 and VBE(on) = 0.7 V. You may neglect Early effect and use VT = 26 mV. (i) Draw the DC equivalent circuit, then determine Iç and VCE. Draw the AC equivalent circuit using re model. Based on this, determine the parameters Av, Rin and Rout. (ii) Vcc Rc R1 R2 C3 Vout C2 Ci Vin Figure Q1(a)arrow_forward1. Calculate the theoretical voltage gain of the first stage when the second stage is set for maximum gain. 2. Calculate the theoretical maximum voltage gain of the second stage. 3. Determine the overall theoretical voltage gain. 4. Calculate the circuit power dissipation with no signal (quiescent).arrow_forward
- A. For the configuration shown below in 4(A), find the small signal voltage gain (Voutp-Voutm)/Vin B. For the configuration shown in 4(B), find the following parameters (a) DC value of output voltage, (b) input common mode range and (c) small signal voltage gain when all transistors are in saturation vou/Vin as indicated in the diagram; Assume no body bias on M1 ad M2 For this problem ONLY, assume the following device parameters V7, = \V| = 0.5V;K, = k ,' = 100 µA / V²,a, = a, = 0.01 VDD = 3V (10/1) M, M. (10/1) (10/1) M, |M, (10/1) Voutp 20kΩ м, (200/1) м, м, (10/1) м, Vin (1/1) м, M. (10/1) + Vin DC VAN M, 100HA (1/1) M, M, (10/1) (A) (B) V. =-1Varrow_forward17/For the circuit shown in Figure, determine IC and VCB. Assume the transistor to be made of Germaniumarrow_forward2. Discuss and compare (by equations) between the relative levels of stability for the following biasing circuits: i. the fixed-bias circuit, ii. the emitter-stabilized bias circuit, iii. the voltage-divider bias circuit, and iv. the voltage-feedback circuit.arrow_forward
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