Consider the circuit in Figure
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Microelectronics: Circuit Analysis and Design
- For the circuit of Figure 2. Carry out the analysis in DC and small signal with wwwwwww wwwww www wwwwwwwwwwwwwww Vt=0.7 V, Kn(W/L) = 4 mA/V. Ignore the Early effect. Determine: (a) The current in DC ID. www.www (b) The gains vo/v₁, io/ii (c) The input resistance Rin and output resistance Rout. wwwwwwwwwww 1/ 0.6 k w o Ca ΙΜΩ www.11 12 V 0.51 k Figura 2: wwwwwwwwwwwwwwww • 2.7 ΚΩ Ca +₁₁ U 4.7 karrow_forward4. For the transistor in the figure shown below, the parameters are ß = 100 and VÀ = ∞. a. Design the circuit such that lEQ = 1mA and the Q-pt is in the center of the dc load line. b. If the peak-to-peak sinusoidal output voltage is 4V, determine the peak-to-peak sinusoidal signals at the base of the transistor and the peak-to-peak value of Vs. If the load resistor R₁ = 1kQ is connected to the output through a coupling capacitor, determine the peak-to-peak value in the output voltage, assuming vs is equal to the value determined in part (b). Vcc=+10 V www Rs = 0.7 kΩ Cc www RB RE voarrow_forwardTransistors originally were made with germanium but modern transistors use silicon for its higher heat tolerance. Transistors amplify and switch signals. They can be analog or digital. Two prevalent transistors today are Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) and Bipolar Junction Transistors (BJT).In your own understanding in the field of electronics can you compare and contrast which one has merit over the other ?arrow_forward
- Time left 1:46:17 A bipolar junction transistor is described in the figure below. The transistor is implemented in the circuit with Vcc, Rc, and RB equal to 16 volts, 2k, and 10kn. Determine the value of Vout if Vin = 1.1V. V... in RB B Vec Ro V E outarrow_forwardIn a transistor circuit, collector load is 4 kΩ whereas quiescent current (zero signal collector current) is 1 mA. (i) What is the operating point if VCC = 10 V ? (ii) What will be the operating point if RC = 5 kΩ ?arrow_forwardFor the circuit of Figure 2. Carry out the analysis in DC and small signal with www.w www www.www Vt=0.7 V, Kn(W/L) = 4 mA/V. Ignore the Early effect. Determine: (a) The current in DC ID. (b) The gains vo/v₁, io/ii (c) The input resistance Rin and output resistance Rout. wwwwww 06402 www Ca HH {ama Ο ΜΩ www.11 Figura 2: 0.51 k www.li 12 V • 27 ΚΩ Ca +1₁ -0% 4.7 karrow_forward
- Given a D-MOSFET circuit used as an amplifier with the following parameter: IDSS=12mA and a transconductance of gm=3.2 mS. Determine the DC drain to source voltage VDS and the AC output voltage if Vin=500 mV.arrow_forwardDefine in your own words what is a small signal FET when it comes to Av, Ai, ri, ro of the circuit.arrow_forward4. The transistor is a three-layer semiconductor device consisting of either - of material or 5. The input set for the common-base amplifier relates an input current various levels of output voltage 6. For BJT transistor ICBO =0.02 mA and ICEO= 4---- if B =60 to an input voltage for ----- ----arrow_forward
- Draw, Illustrate and label your schematic diagram before solving the problem. 3) Given an Emitter-Stabilize Biased transistor circuit with beta DC is 250,Base resistor is 150 ohms, collector resistor is 1.5k ohms ,emitter resistor is 500 ohms ,emitter voltage supply is -5v and Voltage at common collector is +28V,Voltage at Base-emitter junction is 0.7v,. Determine Base current, Collector current and Voltage at collector-emitter junction.arrow_forward(ii) Calculate the RB, Rc, and the minimum power rating of the transistor (Note: the actual power rating should be greater).arrow_forwardFind value of RT so that output voltage Vo is (-1.5)(volt).arrow_forward
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