The circuit and transistor parameters for the circuit shown in Figure P 11.11 are
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Microelectronics: Circuit Analysis and Design
- 2. A single transistor amplifier is shown in the circuit to the right. The input is a 100 kHz sine wave from a very low impedance source, with a 1 mV peak-to-peak amplitude. hfe, the forward current gain of the transistor, is 300. The base reverse leakage current is 1 nA. The ideality factor for the base-emitter diode is 2, so nkT= 50 mV. a. What are the voltages relative to ground and the currents flowing into, into, and out from the collector, the base, and the emitter, respectively? b. What is the impedance of the 1 µF capacitors at 100 kHz and what effect will this have on the gain of the amplifier? c. What is the gain of the amplifier and how does it depend on the hfe of the transistor? Luff Vin maits Ik { +V₁ = +15V املا Vo Sik Y 1 Fb V₂ I m Vout MF 2K = 250 hfő - -15V --Y₂arrow_forward1. For the circuit in Figure 1: a) Calculate the input and output power if the input signal results in a base current of 5 mA rms. b) Calculate the input power dissipated by the circuit if Rg is changed to 1.5 kN. c) What maximum output power can be delivered by the circuit if RB is changed to 1.5 kN? d) If the circuit is biased at its center voltage and center collector operating point, what is the input power for a maximum output power of 1.5 W? +Vcc (18 V) Rc = 16 2 RB 1.2 k2 V. B - 40 100 µF Figure 1arrow_forwardA cascode circuit is shown in Figure 4 below: v+ Rp R1 CG M2 R2 Cc M1 R3 Rs Cs V- Figure 4 The transistor parameters are Kn1 = Kn2 = 0.8 mA/V² and VTNI = VTN2= 1.2 V. The cascode circuit operates at Ip = 0.4 mA in each transistor. (a) Draw the AC equivalent circuit for the cascode circuit shown in Figure 4 above. (b) Draw the small-signal equivalent circuit for the cascode circuit shown in Figure 4 above. (c) Design the cascode circuit with a voltage gain (Av) of -5.0. wwo sarrow_forward
- 1. For the circuit in Figure 1: a) Calculate the input and output power if the input signal results in a base current of 5 mA rms. b) Calculate the input power dissipated by the circuit if RB is changed to 1.5 kN. c) What maximum output power can be delivered by the circuit if RB is changed to 1.5 kN? d) If the circuit is biased at its center voltage and center collector operating point, what is the input power for a maximum output power of 1.5 W? +Vcc (18 V) RC -16Ω RB 1.2 k2 B - 40 100 µFarrow_forward(ii) Calculate the RB, Rc, and the minimum power rating of the transistor (Note: the actual power rating should be greater).arrow_forwardOpen with v Consider class-A emitter follower circuit shown in the figure below. The circuit parameters are V+ = 24 V, V- = -24 V, and RL = 2000. The transistor parameters are B = 50, VBElon) = 0.7 V, and VCElsat) = 0.2 V. The output voltage is to vary between +20 V and -20 V. The minimum current in Q1 is to be ie1 = 20 mA. For vo = 0, find the power dissipated in the first transistor Q1- V+arrow_forward
- Time left 1:46:17 A bipolar junction transistor is described in the figure below. The transistor is implemented in the circuit with Vcc, Rc, and RB equal to 16 volts, 2k, and 10kn. Determine the value of Vout if Vin = 1.1V. V... in RB B Vec Ro V E outarrow_forwardVR2 (t) voltage will be calculated by analyzing the circuit in Figure 2 with a non-linear element using the Small Signal Analysis method. For this purposea) Find the operating point VkQ, IkQ voltage and current values of the nonlinear element.b) Linearize the non-linear element at the operating point.c) Find the voltage VR2 (t) by calculating the effect of the variable source using the linear model.arrow_forwardA Bipolar junction Transistor with curreat amplification factor being 100, Input Base current is 50μA. Collector voltage is 10 V and biasing voltage being +20 V. Find followings a. Collector current b. Resistance (R1) c. Collector voltage , Emitter voltage , Base Voltage & Collector-Emitter Voltage.arrow_forward
- Determine the DC bias values using DC equivalent circuits (in order of VE, VB, VC)arrow_forwardThe transistor parameters for the circuit in Figure P11.9 are: B = 100, VBE (On) = 0.7 V, and VA = ∞o. (a) Determine RE such that IE = 150 μΑ. (b) Find Ad, Acm, and CMRRB for a one-sided output at vo2. (c) Determine the differential- and common-mode input resistances. Rc-50 k Rg = 0.5 kΩ www VI www 21 Figure P11.9 +10 V VOLVO2 IE RE -10 V ? Rc = 50 kΩ 22 Rg = 0.5 kΩ ww S'arrow_forwardFigure 1(a) shows a series fed class A amplifier circuit. In order to achieve the maximum efficiency, the Q point must be located at the center of the DC load line as shown in Figure 1(b). This generates the maximum output current swing of Icmax (p – p) RC and the maximum output voltage swing is VCEmax(p – p) = Vcc Assume that the maximum input de power is (1 Vcc Pimax(dc) = Vcc!cQ(max)=Vcc \2° Rc. 2Rc Find the maximum efficiency, 7 of this circuit.arrow_forward
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