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The parameters of the diff-amp shown in Figure 11.2 are
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Microelectronics: Circuit Analysis and Design
- Class B Amplifier q1)If the input is 7.5Vp-p...DATA COLLECTION: What is the IL(peak)? a)7mA 6)mA 5)mA 4)mA q2) DATA COLLECTION: What is the Idc? a)3.84 b)4.82 c)3.82mA d)1.82mA q3)DATA COLLECTION: What is the input power in DC? Power input = 48.45mW Power input = 45.48mW Power input = 44.58mW Power input = 45.84mW q4) DATA COLLECTION: What is the output power in AC? a)18mW b)81mW c)11.8mW d)18.9mW q5)DATA COLLECTION: What is the power dissapated by each transistor? a)35.1mW b)53.1mW c)15.3mW d)13.5mW q6)DATA COLLECTION: What is the efficiency of class B amplifier? a)45% b)40% c)63% d)33% q7)arrow_forwardA. Detemine the value of the collector resistor in an npn transistor amplifier with Bpc = 250, VBB = 2.5 V, Vcc = 9 V, VCE = 4 V, and Rg = 100 k2. B. Detemine Ic(sat) for the transistor in below Figure. What is the value of Is necessary to produce saturation? What minimum value of VIN is necessary for saturation? Assume VCE(sat) = 0 V. %3D +5 V 10 kN Rg VINO BDC = 150 1.0 MNarrow_forwardII.The following figure shows a class AB amplifier. (a) Determine the parameters of dc VB (Q1), VB (Q2), VE, ICQ, VCEQ (Q1), VCEQ (Q2). (b) For a 5-Vrms input, determine the power that is provided to the load resistor, and (c) Draw the output signal +Vcc +9 V 1.0kn D: R 5.0 V rms R2 10 kN -Vecarrow_forward
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- As a maintenance engineer in a semiconductor company, you are given a task to replace the current version of dc-biasing circuit for a faulty tester machine. This dc-biasing circuit used an n-channel JFET as shown in Figure 2. Re-design a new dc-biasing circuit using an n-channel D-MOSFET that can produce a similar output current, IDQ as the previous circuit. Your tasks are: (i) Calculate the operating point (IDQ and VGSQ) of the dc-biasing circuit in Figure 2. Then sketch the JFET network transfer curve (ID and VGS). (ii) Without changing the circuit configuration, calculate the values of source resistor, RS and RB to achieve this objective. Determine the commercial value of the new RS and RB. For cost reduction reason, the values of RD, RA and VDD should be maintained. The chosen D-MOSFET has a maximum drain current of 8 mA and gate-source cutoff voltage of – 15V. The new RS value should be 3 times larger than the old RS used in the JFET network to compensate for the high…arrow_forwardDetermine the W/L and other values in the single stage common-source amplifier below such that drain current is 11.33 amp and gain is high.arrow_forwardThe transistor parameters for the circuit in Figure P11.9 are: B = 100, VBE (On) = 0.7 V, and VA = ∞o. (a) Determine RE such that IE = 150 μΑ. (b) Find Ad, Acm, and CMRRB for a one-sided output at vo2. (c) Determine the differential- and common-mode input resistances. Rc-50 k Rg = 0.5 kΩ www VI www 21 Figure P11.9 +10 V VOLVO2 IE RE -10 V ? Rc = 50 kΩ 22 Rg = 0.5 kΩ ww S'arrow_forward
- QUESTION 10: The circuit parameters for diff-amp shown in Figure 11.30 are V* = 6 V, V = -6 V, and Io = 0.45 mA. The transistor parameters are ß = 74, V₁1 = V42 = 115 V₂ V 43 V 44 = 90 V, and V45 = ∞0. Determine the open-circuit differential-mode voltage gain. What is the output resistance of the diff-amp? Find the value of load resistance R₁ that reduces the differential-mode gain to 71 percent of the open-circuit value. Ad (open circuit) Format: 7842.2636277565 R₂ (kn) Format: 429.43075670268 Format: 672.96782467086 R₁ (kn) ibl iz i₁ 8mºd 2 V+ 25 V- i₂ = 8m'd 2 24 2₂ Signal ground V- Figure 11.30 Cc 8md 2 -Ove RL Sning Toolarrow_forwardQUESTION 12: The differential amplifier shown in Figure P11.60 has a pair of pnp bipolars as input devices and a pair of npn bipolars connected as an active load. The circuit is biased by Io=0.24 mA, and the transistor parameters are ß = 80 , VẬP=90 V, and VAN = 115 V. (a) Determine Io such that the de currents in the diff-amp are balanced. (b) Find the open-circuit differential-mode voltage gain. (c) Determine the differential-mode voltage gain if a load resistance R1 = 260 k2 is connected to the output. Io (HA) Format : 4.595 Ad (open circuit) Format : 4594.5 Ag (closed loop) Format : 796.4 V+ Q2 Oa 어 RL Q3 Q4 V-arrow_forward........ (Figure-1) R. RB= 380kN,Rc= 1kN B = 100, VBB = Vcc=12V RB ww Vec CC ......... I, V CE СЕ V ВЕ BB Q-1-b) Describe briefly the input / output characteristics and application of Common Emitter BJT Configurationarrow_forward
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