2. The parameters of the transistor as shown in the figure below are ß = 100 and VA = 100V. a. Find the dc voltages at the base and emitter terminals. b. Find Rc such that VCEQ = 3.5V. c. Assuming Cc and CE act as short circuits, determine the small-signal voltage gain Av = vo/vs. d. Repeat part (c) if a 5000 source resistor is in series with the vs signal source. V+ = +5 V Rs = 100 2 www Vs Cc RB = 10 ΚΩ I= 0.35 mA RC -ovo V=-5 V CE

Fill in the table VB VC VE Ic LE I8 fre IT gm 5V Consider the circuit given at the right. 600k 1.5k =0.7, Vauo, B=165) 100uF Vo 1k 100uF a) Perform DC analysis and calculate all VB =? VC:? branch currents, node voltages, and small signal parameters 3K VE=? Rout b) Draw a small-signal equivalent model n Vin Rin 400K c) Calculate Ri, Rout, and Ay=Vou/Vin -5V

The n-channel JFET and the D-MOSFET have very similar I-V output characteristics. Which of these two structures can be operated in enhancement mode and why is that possible.

Determine thel 1.V B, c and V for the transistor circuit in Figure. Rc 430 Q Rg Vcc A) Poc = 50 24 V 4.7 ko VBB 2 V