All transistors in the MOSFET modified Wilson current source in Figure10.20(b) are identical. The parameters are:
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Microelectronics: Circuit Analysis and Design
- 2. This is a small signal problem. Suppose the MOSFETS drawn have lp = 1 mA when VGS = 2.5 V, and Vth = 0.5 V. Suppose the BJTs drawn have Ic = 1 mA when VBE = 0.7 V. Av VDD = 5V VDD VDD T T Rc = 1 kn Vin RB2 = 10 kn RB1 = 10 kn w/li w Rp = 1 kn R₁ Vout (a) Derive voltage gain Ay and input impedance Zin assuming R₁ ➡8. (b) Plot Ay as a function of R, assuming R, is attached between Vout and ground. (c) Rederive Ay and Zin assuming Roo and after swapping the BJT and MOSFET. RLarrow_forwardQ1) Design the bias of MOSFET such that the Q-point is in middle of saturation region. Assume Vtn =1v, kn=1ma/v, clm factor=0.015 and ri=(R1||R2) =100k .design the circuit such that Idq =2ma and Q-point is in the middle of the saturation region. VDD = 12 V Rp2 ID=2 mA Ovo Cc wwarrow_forward4. For the transistor in the figure shown below, the parameters are ß = 100 and VÀ = ∞. a. Design the circuit such that lEQ = 1mA and the Q-pt is in the center of the dc load line. b. If the peak-to-peak sinusoidal output voltage is 4V, determine the peak-to-peak sinusoidal signals at the base of the transistor and the peak-to-peak value of Vs. If the load resistor R₁ = 1kQ is connected to the output through a coupling capacitor, determine the peak-to-peak value in the output voltage, assuming vs is equal to the value determined in part (b). Vcc=+10 V www Rs = 0.7 kΩ Cc www RB RE voarrow_forward
- Question 1: For the Mosfet in the circuit shown below: VTp = - 0.8V, and Kp = 200 uA/V2. Find Vs and Vp. Where Kp = ½ kp'W/L. lo=0.4 m Vs R= 50 k2 Rp=S ka -5 Varrow_forwardFor the MOSFET circuit given here, V to = 2V, K = 160μA/V2. Design the values of R1 and R2 such that the drain current (ID) is 0.5mAand the current through the R1 and R2 is one-tenth of ID. Assume the transistor isin saturation (Hint: μ = 1 x 10-6).arrow_forwardReferring to Figure 2 and the following BJT parameters: ß = 100, thermal voltage = 25 mV and VBE = 0.7 V. a. Calculate the DC operating point of the BJT which are the collector current, Ic and base-emitter voltage, VCE. b. Draw the low-frequency small-signal equivalent circuit for Figure 2. c. If v = (Mx10-8)sin(wt) V where M is your matric number, calculate the instantaneous positive peak collector voltage, Ve(peak). d. Explain the effect of CE on the BJT DC operating point and the small- signal voltage gain. Vc 10V Rc $4.7 ka R1 47 ko3 B=100 Vthermai=25mv R2 10 kn3 CE |10uf RE $1ko GND Figure 2arrow_forward
- 2) Consider the circuit given below. (Assume: K-4mA/V', Vt=-1V, A=0, (K= µCox.(W/L)) da Perform DC analysis and calculate Va. Vsg, Vs, voltages, and Ip, gm, ro values bo Draw a small-signal equivalent circuit Co Calculate Av, Rin, Rout values as shown on the schematic Also ) satwaton mode Test for Fill inthe table VG VSG O2m A Rin Vs QUin ID vo Coo 9m Ro Av Rout Rin Routarrow_forwardVi RB Vcc Rc our A BJT (B=200) is implemented in an amplifier circuit, with a VCC of 15 volts. One wishes to set the Q point at IC = 5.76 mA and VCE = 6.73 volts (DC). Determine RB.arrow_forwardSelect a MOSFET which can be operated in both depletion and enhancement modes. E- MOSFET None of the given choices D- MOSFET as well as E - MOSFET D- MOSFETarrow_forward
- Example 10-1: 1. Design a voltage-divider bias circuit using a Vcc supply of +18 V, and an npn silicon transistor with B of 80. Choose Rc = 5RE, and set Ic at 1 mA and the stability factor S(Ico) at 3.8. 2. For the circuit designed in part (1), determine the change in Ic if a change in operating conditions results in Ico increasing from 0.2 to 10 µA, VBE drops from 0.7 to 0.5 V, and B increases 25%. 3. Calculate the change in Ic from 25° to 75°C for the same circuit designed in part (1), if Ico = 0.2 µA and VBE = 0.7 V.arrow_forwardIn reference to the given figure, VCB = 10.3V and VBE = 0.7V. NOTES: VCB = VC-VB VBE = VB-VE In reference to Figure 2, given the dc load line and the transistor circuit, what will be the value of RC, in kilo-ohms? In reference to Figure 2, given the dc load line and the transistor circuit, what will be the voltage of RB, in volts? In reference to Figure 2, given the dc load line and the transistor circuit, what will be the value of RB in kilo-ohms, if Beta=100?arrow_forwardFor the given circuit, Vcc = 17 volts, Rg = 900 KN, Rc = 6 KN, RE = 7 KN and B = 160. Assume Transistor is Silicon, VBE=0.7 volts. Vcc RC RB a. Compute for the base current Q-point, Igo (in Amperes) b. Compute for the collector current Q-point, Icq (in Amperes) c. Compute for the collector-to-emitter voltage, VCEQ (in Volts)| d. Draw the Load Line, with details. 1. Base current Q-point in amperes is 2. Collector current Q-point in amperes is 3. Collector to Emitter Voltage Q-point in volts isarrow_forward
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