Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Textbook Question
Chapter 10, Problem 10.8TYU
All transistors in the MOSFET modified Wilson current source in Figure10.20(b) are identical. The parameters are:
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D Question 4
Find the base and collector currents for each of
the following two circuits. Assume a base-
emitter voltage of 0.7.
R1
1 Meg
R1
1 Meg.
R2
5k
Q1
generic
AND
.op
.model generic NPN(BF=100)
R2
10k
Q1
generic
R3
10k
+
.op
.model generic NPN(BF=100)
Vcc
Vcc
10.7
10.7
In the figure, A characteristics curve is shown for the MOSFET.
Determine the following outcome and parameters using the values
given in the characteristics:
i) Find the Ip for the VGs = 4V, where IGs(ON) = 4.5mA
ii) Find the transconductence of MOSFET; where, MOSFET
having the bias voltage VGs = 4V, and 6V.
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A (mA)
A5 (mA)
10
10
VGs=+8 V
9.
7
.7
VGs =+7 V
6
5
Vas=+6 V
4
VGs =+5 V
2
VGs =+4 V
Vas =+3 V
1
3
4.
5
8
Vas
10
15
20
25
Vos
Vas = VT=2 V
a co
3. In the figure shown below, Vmax is measured as 5.9 V and V min measured as
1.2V.
18] In the figure shown below, is measured as 5.9 V an
(a) Determine the value of V..
(b) Determine the value of Vm.
(c) Determine the modulation index.
(d) Suppose we can change the value of V. What is the maximum value that we
could use for Vm without causing overmodulation?
Chapter 10 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 10 - The circuit parameters for the two-transistor...Ch. 10 - Consider the circuit shown in Figure 10.3. The...Ch. 10 - The parameters of the circuit shown in Figure 10.5...Ch. 10 - Consider the Widlar current source in Figure 10.9....Ch. 10 - Consider the circuit in Figure 10.10. Assume the...Ch. 10 - A Widlar current source is shown in Figure 10.9....Ch. 10 - Figure 10.12 shows the N-output current mirror....Ch. 10 - Prob. 10.1TYUCh. 10 - Prob. 10.2TYUCh. 10 - For the Wilson current source in Figure 10.8, the...
Ch. 10 - Prob. 10.4TYUCh. 10 - Prob. 10.8EPCh. 10 - Prob. 10.9EPCh. 10 - Consider the JFET circuit in Figure 10.24. The...Ch. 10 - Consider Design Example 10.8. Assume transistor...Ch. 10 - The bias voltages of the MOSFET current source in...Ch. 10 - Prob. 10.7TYUCh. 10 - All transistors in the MOSFET modified Wilson...Ch. 10 - A simple BJT amplifier with active load is shown...Ch. 10 - Prob. 10.9TYUCh. 10 - Prob. 10.10TYUCh. 10 - Prob. 10.11TYUCh. 10 - Prob. 10.12EPCh. 10 - For the circuit in Figure 10.40(a), the transistor...Ch. 10 - Prob. 10.12TYUCh. 10 - Repeat Example 10.12 for the case where a resistor...Ch. 10 - Prob. 10.14TYUCh. 10 - Prob. 1RQCh. 10 - Explain the significance of the output resistance...Ch. 10 - Prob. 3RQCh. 10 - Prob. 4RQCh. 10 - What is the primary advantage of a BJT cascode...Ch. 10 - Prob. 6RQCh. 10 - Can a piecewise linear model of the transistor be...Ch. 10 - Prob. 8RQCh. 10 - Sketch the basic MOSFET two-transistor current...Ch. 10 - Discuss the effect of mismatched transistors on...Ch. 10 - Prob. 11RQCh. 10 - Sketch a MOSFET cascode current source circuit and...Ch. 10 - Discuss the operation of an active load.Ch. 10 - What is the primary advantage of using an active...Ch. 10 - Prob. 15RQCh. 10 - What is the impedance seen looking into a simple...Ch. 10 - What is the advantage of using a cascode active...Ch. 10 - Prob. 10.1PCh. 10 - The matched transistors Q1 and Q2 in Figure...Ch. 10 - Prob. 10.3PCh. 10 - Reconsider the circuit in Figure 10.2(a). Let...Ch. 10 - Prob. 10.5PCh. 10 - The transistor and circuit parameters for the...Ch. 10 - The bias voltages in the circuit shown in Figure...Ch. 10 - Consider the current source in Figure 10.2(b). The...Ch. 10 - Prob. 10.9PCh. 10 - Prob. 10.10PCh. 10 - Prob. D10.11PCh. 10 - In the circuit in Figure P10.11, the transistor...Ch. 10 - Prob. D10.13PCh. 10 - Consider the circuit shown in Figure P 10.14. The...Ch. 10 - Design a basic two-transistor current...Ch. 10 - The values of for the transistors in Figure P10.16...Ch. 10 - Consider the circuit in Figure P10.17. The...Ch. 10 - All transistors in the N output current mirror in...Ch. 10 - Design a pnp version of the basic three-transistor...Ch. 10 - Prob. D10.20PCh. 10 - Consider the Wilson current source in Figure...Ch. 10 - Consider the circuit in Figure P10.22. The...Ch. 10 - Consider the Wilson current-source circuit shown...Ch. 10 - Consider the Widlar current source shown in Figure...Ch. 10 - Prob. 10.25PCh. 10 - Consider the circuit in Figure P10.26. Neglect...Ch. 10 - (a) For the Widlar current source shown in Figure...Ch. 10 - Consider the Widlar current source in Problem...Ch. 10 - (a) Design the Widlar current source such that...Ch. 10 - Design a Widlar current source to provide a bias...Ch. 10 - Design the Widlar current source shown in Figure...Ch. 10 - The circuit parameters of the Widlar current...Ch. 10 - Consider the Widlar current source in Figure 10.9....Ch. 10 - Consider the circuit in Figure P10.34. The...Ch. 10 - The modified Widlar current-source circuit shown...Ch. 10 - Consider the circuit in Figure P10.36. Neglect...Ch. 10 - Consider the Widlar current-source circuit with...Ch. 10 - Assume that all transistors in the circuit in...Ch. 10 - In the circuit in Figure P10.39, the transistor...Ch. 10 - Consider the circuit in Figure P10.39, with...Ch. 10 - Consider the circuit shown in Figure P10.41....Ch. 10 - For the circuit shown in Figure P 10.42, assume...Ch. 10 - Consider the circuit in Figure P10.43. The...Ch. 10 - Consider the MOSFET current-source circuit in...Ch. 10 - The MOSFET current-source circuit in Figure P10.44...Ch. 10 - Consider the basic two-transistor NMOS current...Ch. 10 - Prob. 10.47PCh. 10 - Consider the circuit shown in Figure P10.48. Let...Ch. 10 - Prob. 10.49PCh. 10 - The circuit parameters for the circuit shown in...Ch. 10 - Prob. 10.51PCh. 10 - Figure P10.52 is a PMOS version of the...Ch. 10 - The circuit shown in Figure P10.52 is biased at...Ch. 10 - The transistor circuit shown in Figure P10.54 is...Ch. 10 - Assume the circuit shown in Figure P10.54 is...Ch. 10 - The circuit in Figure P 10.56 is a PMOS version of...Ch. 10 - The transistors in Figure P10.56 have the same...Ch. 10 - Consider the NMOS cascode current source in Figure...Ch. 10 - Consider the NMOS current source in Figure P10.59....Ch. 10 - Prob. 10.60PCh. 10 - The transistors in the circuit shown in Figure...Ch. 10 - A Wilson current mirror is shown in Figure...Ch. 10 - Repeat Problem 10.62 for the modified Wilson...Ch. 10 - Prob. 10.64PCh. 10 - Prob. 10.65PCh. 10 - Prob. D10.66PCh. 10 - Prob. D10.67PCh. 10 - The parameters of the transistors in the circuit...Ch. 10 - Prob. 10.69PCh. 10 - Consider the circuit shown in Figure P10.70. The...Ch. 10 - Prob. 10.71PCh. 10 - Prob. D10.72PCh. 10 - Prob. 10.73PCh. 10 - Prob. D10.74PCh. 10 - Prob. 10.75PCh. 10 - For the circuit shown in Figure P10.76, the...Ch. 10 - Prob. 10.77PCh. 10 - Prob. 10.78PCh. 10 - The bias voltage of the MOSFET amplifier with...Ch. 10 - Prob. 10.80PCh. 10 - Prob. 10.81PCh. 10 - Prob. 10.82PCh. 10 - A BJT amplifier with active load is shown in...Ch. 10 - Prob. 10.84PCh. 10 - Prob. 10.85PCh. 10 - Prob. 10.86PCh. 10 - The parameters of the transistors in Figure P10.87...Ch. 10 - The parameters of the transistors in Figure P10.88...Ch. 10 - A BJT cascode amplifier with a cascode active load...Ch. 10 - Design a bipolar cascode amplifier with a cascode...Ch. 10 - Design a MOSFET cascode amplifier with a cascode...Ch. 10 - Design a generalized Widlar current source (Figure...Ch. 10 - The current source to be designed has the general...Ch. 10 - Designa PMOS version of the current source circuit...Ch. 10 - Consider Exercise TYU 10.10. Redesign the circuit...
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- 2. This is a small signal problem. Suppose the MOSFETS drawn have lp = 1 mA when VGS = 2.5 V, and Vth = 0.5 V. Suppose the BJTs drawn have Ic = 1 mA when VBE = 0.7 V. Av VDD = 5V VDD VDD T T Rc = 1 kn Vin RB2 = 10 kn RB1 = 10 kn w/li w Rp = 1 kn R₁ Vout (a) Derive voltage gain Ay and input impedance Zin assuming R₁ ➡8. (b) Plot Ay as a function of R, assuming R, is attached between Vout and ground. (c) Rederive Ay and Zin assuming Roo and after swapping the BJT and MOSFET. RLarrow_forward4. For the transistor in the figure shown below, the parameters are ß = 100 and VÀ = ∞. a. Design the circuit such that lEQ = 1mA and the Q-pt is in the center of the dc load line. b. If the peak-to-peak sinusoidal output voltage is 4V, determine the peak-to-peak sinusoidal signals at the base of the transistor and the peak-to-peak value of Vs. If the load resistor R₁ = 1kQ is connected to the output through a coupling capacitor, determine the peak-to-peak value in the output voltage, assuming vs is equal to the value determined in part (b). Vcc=+10 V www Rs = 0.7 kΩ Cc www RB RE voarrow_forwardReferring to Figure 2 and the following BJT parameters: ß = 100, thermal voltage = 25 mV and VBE = 0.7 V. a. Calculate the DC operating point of the BJT which are the collector current, Ic and base-emitter voltage, VCE. b. Draw the low-frequency small-signal equivalent circuit for Figure 2. c. If v = (Mx10-8)sin(wt) V where M is your matric number, calculate the instantaneous positive peak collector voltage, Ve(peak). d. Explain the effect of CE on the BJT DC operating point and the small- signal voltage gain. Vc 10V Rc $4.7 ka R1 47 ko3 B=100 Vthermai=25mv R2 10 kn3 CE |10uf RE $1ko GND Figure 2arrow_forward
- 2) Consider the circuit given below. (Assume: K-4mA/V', Vt=-1V, A=0, (K= µCox.(W/L)) da Perform DC analysis and calculate Va. Vsg, Vs, voltages, and Ip, gm, ro values bo Draw a small-signal equivalent circuit Co Calculate Av, Rin, Rout values as shown on the schematic Also ) satwaton mode Test for Fill inthe table VG VSG O2m A Rin Vs QUin ID vo Coo 9m Ro Av Rout Rin Routarrow_forwardFor the circuit in Figure 10.20 in the text,RC = 1 kΩ, VBB = 5 V, βmin = 50, and VCC = 10 V.Find the range of RB so that the transistor is in thesaturation state.arrow_forwardPls answer the following. Thank youarrow_forward
- A Bipolar junction Transistor with curreat amplification factor being 100, Input Base current is 50μA. Collector voltage is 10 V and biasing voltage being +20 V. Find followings a. Collector current b. Resistance (R1) c. Collector voltage , Emitter voltage , Base Voltage & Collector-Emitter Voltage.arrow_forwardSelect a MOSFET which can be operated in both depletion and enhancement modes. E- MOSFET None of the given choices D- MOSFET as well as E - MOSFET D- MOSFETarrow_forwardUsing the small signal equivalent model, find the voltage gain Vo/vi of such E-MOSFET circuit. Neglect impedance due to capacitors by assuming these to be short circuit on AC analysis. Kn =4 mA/V2, and VTh = 2Varrow_forward
- Vi RB Vcc Rc our A BJT (B=200) is implemented in an amplifier circuit, with a VCC of 15 volts. One wishes to set the Q point at IC = 5.76 mA and VCE = 6.73 volts (DC). Determine RB.arrow_forwardExample 10-1: 1. Design a voltage-divider bias circuit using a Vcc supply of +18 V, and an npn silicon transistor with B of 80. Choose Rc = 5RE, and set Ic at 1 mA and the stability factor S(Ico) at 3.8. 2. For the circuit designed in part (1), determine the change in Ic if a change in operating conditions results in Ico increasing from 0.2 to 10 µA, VBE drops from 0.7 to 0.5 V, and B increases 25%. 3. Calculate the change in Ic from 25° to 75°C for the same circuit designed in part (1), if Ico = 0.2 µA and VBE = 0.7 V.arrow_forwardIn the following problem we want to calculate an N-type MOSFET transistorparameters when body is connected to the source. The W/L = 10 for the device,and ignore channel length modulation. a)Based on triode and saturation equations that you learned in the class, plotdrain current versus drain voltage, when source is grounded and Vgs = 0.5,1, and 3V. Sweep the drain voltage from 0 V to 3 V. This plot is calledOutput characteristics of a transistor. Highlight the point where transistorsregion is switched from triode region into saturation.arrow_forward
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How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License