Concept explainers
Consider the JFET circuit in Figure 10.24. The transistor parametersare:
Want to see the full answer?
Check out a sample textbook solutionChapter 10 Solutions
Microelectronics: Circuit Analysis and Design
- In an n- channel JFET biased by potential divider method.lt is desired to set the operating point at I, = 2.5 mA and Vs =8V. If Vn = 30 V,R, =1 MQ and R, = 500 k2.Find the value of R¸.The parameters of JFET are Iss =10 mA and Vos(om = -5 V. GS(off)arrow_forward(10/1) (20/1) IREF = 50µ.A The circuit above is PMOS current mirror with the W/L ratio in parenthesis. Calculate the current lout given there is no channel length modulation. The answer must be in uA.arrow_forwardDesign a common emitter amplifier for a Vout of+-6.3V. Vcc is set to 9V. At x=1, Av=12.6 V/V and the dynamic range from 6.3V to -6.3V. Rout must be less than 100 ohms and Rin must be higher than 100 kohmsarrow_forward
- 2. This is a small signal problem. Suppose the MOSFETS drawn have lp = 1 mA when VGS = 2.5 V, and Vth = 0.5 V. Suppose the BJTs drawn have Ic = 1 mA when VBE = 0.7 V. Av VDD = 5V VDD VDD T T Rc = 1 kn Vin RB2 = 10 kn RB1 = 10 kn w/li w Rp = 1 kn R₁ Vout (a) Derive voltage gain Ay and input impedance Zin assuming R₁ ➡8. (b) Plot Ay as a function of R, assuming R, is attached between Vout and ground. (c) Rederive Ay and Zin assuming Roo and after swapping the BJT and MOSFET. RLarrow_forwarda. Sketch the transfer curve for the device in the figure below. b. Determine IDg and VGSQ using the transfer curve c. Calculate Ipo and VGSQ for the circuit below 12 V 1.2 ka loss = 12 mA Vaso V =-4V 1 MA 1.5 V.arrow_forwardThe waveforms of a BJT transistor used as a switch are shown below. The parameters are as follows: Vcc = 200V, VCE(sat) = 2V, Ics = 100A, VBe(sat) = 3V, lg = 10A and f, =10 kHz. The various times on the graph are: ta= 0.6ps, t, = 1.8us, ts = 3µs, t = 4µs, tn = 47.6µs and to = 43µs. Neglect ICEo (Iceo = 0 mA). The average power loss due to the base current is equal to: Ias VBE T- 1/f, Select one: O a. 35W O b. 45W O c. 25W O d. 15Warrow_forward
- Determine the magnitude of gm for a JFET with Ipss =12 mA and Vp = -7 Vat the following de bias points with the graphical determination a. VGs = -1.5 V. b. VGs = -2.5 V. c. VGS %3D -3.5 V. d. Find the maximum value of gm- e. Find the value of gm at each operating point of (a. , b. , and c.) with the mathematical determination I need This only f. Plot gm versus VGs for the JFET g. Plot gm versus In for the JFETarrow_forwardThis problem is AC analysis problem. DC analysis is not needed to answer the question. A) If we assume that the peak voltage of Vbe must be less than 10 mV to avoid small signal violations determine the value of Rsig if Vi has a peak amplitude of 1 V and Is = 1mA. Hint: Don't forget r!! Answer: Rsig =. B) If you did the DC analysis on this problem and calculated Vc = 50 mV and Vs = -100 mV what is the maximum amplitude of the output voltage while the circuit stays in active mode. Answer: Vo,max =, When you "verify" a mode of operation you will need to calculate all three voltages (Vc, Ve, VE for BJTS and VG, Vs, Vp for MOSFETS) and show the correct two conditions are satisfied. Assume Capacitors acts like open circuits at DC and short circuits for AC. > Assume the following: 5V o Beta = 100 O VBE = 0.7 o V: (Thermal) = 26 mV o Vr (Threshold) = 2V O VA = - o For MOSFET saturation mode: assume: lp = K(VGs-Vr)? (Assume K = 10 mA/V²). 5kn C2 01 C1 Rsig 1kn 10k Vi IIs :C3 1mA -5Varrow_forwardPrelab: Using the BJT large signal model for the circuit in Figure 1, determine the Vub voltage required to drive a collector current of I, = 0.5 mA. Use RB = 220 kN, Rc = 2.05 kN, RE = 1.05 kN, and Vee = 5V. Assume Is = 50nA and ß = 250. (Hint: Find Vbe using Ic, then use KVL to find Vbb, remember that Ib can be found using the Ic/ ß relationship) RC Voc R3 bb RE Figure 1 NPN BJT under DC Biasarrow_forward
- 4. For the transistor in the figure shown below, the parameters are ß = 100 and VÀ = ∞. a. Design the circuit such that lEQ = 1mA and the Q-pt is in the center of the dc load line. b. If the peak-to-peak sinusoidal output voltage is 4V, determine the peak-to-peak sinusoidal signals at the base of the transistor and the peak-to-peak value of Vs. If the load resistor R₁ = 1kQ is connected to the output through a coupling capacitor, determine the peak-to-peak value in the output voltage, assuming vs is equal to the value determined in part (b). Vcc=+10 V www Rs = 0.7 kΩ Cc www RB RE voarrow_forwarda. small signal transconductance (in uS) of the PMOS b. the output impedance (in kΩ, 2 decimal places) of the PMOSGiven that: VTH = -0.5V, k = 2mA/V2, λ = 0.05, VGS = -0.9V, and VDS = -0.7V.arrow_forwarde. Determine Zj and Ay for a common-emitter amplifier if beta is 80, IE(dc) = 2mA, ro = 40 kQ, and RL = 1.2 k2.arrow_forward
- Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSONDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage LearningProgrammable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
- Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill EducationElectric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSONEngineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,