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Consider the basic two-transistor NMOS current source in Figure 10.16.The circuit parameters are
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Microelectronics: Circuit Analysis and Design
- Design a common emitter amplifier for a Vout of+-6.3V. Vcc is set to 9V. At x=1, Av=12.6 V/V and the dynamic range from 6.3V to -6.3V. Rout must be less than 100 ohms and Rin must be higher than 100 kohmsarrow_forward3. In the figure shown below, Vmax is measured as 5.9 V and V min measured as 1.2V. 18] In the figure shown below, is measured as 5.9 V an (a) Determine the value of V.. (b) Determine the value of Vm. (c) Determine the modulation index. (d) Suppose we can change the value of V. What is the maximum value that we could use for Vm without causing overmodulation?arrow_forward35. The ac schematic of an NMOS common-source stage is shown in the figure below, where part of the biasing circuits has been omitted for simplicity. For the n- channel MOSFET M, the Transconductance 9m = 1mA/V, and body effect and channel length modulation effect are to be neglected. The lower cutoff frequency in Hz of the circuit is approximately at RD 10 ΚΩ V₁o M C 1uF R 10 ΚΩarrow_forward
- For the circuit in Figure 10.20 in the text,VCC = 5 V, RC = 1 kΩ, RB = 10 k, and βmin = 50.Find the range of values of VBB so that the transistor isin saturation.arrow_forwardCoonsider the common emitter amplifier shown in figure below. Assume a β of 100, VBE = 0.7V, VT = 25mA and VA = 100V. Draw an equivalent DC model and determine the rπ, transconductance (gm) and ro. Draw an equaivalent AC model using the small-signal model Find an expression for vbe and vo in terms of the input voltagearrow_forwardFind this simple circuit configuration (Vth & Rth) seen from the output terminalsarrow_forward
- 2. This is a small signal problem. Suppose the MOSFETS drawn have lp = 1 mA when VGS = 2.5 V, and Vth = 0.5 V. Suppose the BJTs drawn have Ic = 1 mA when VBE = 0.7 V. Av VDD = 5V VDD VDD T T Rc = 1 kn Vin RB2 = 10 kn RB1 = 10 kn w/li w Rp = 1 kn R₁ Vout (a) Derive voltage gain Ay and input impedance Zin assuming R₁ ➡8. (b) Plot Ay as a function of R, assuming R, is attached between Vout and ground. (c) Rederive Ay and Zin assuming Roo and after swapping the BJT and MOSFET. RLarrow_forward35. The ac schematic of an NMOS common-source stage is shown in the figure below, where part of the biasing circuits has been omitted for simplicity. For the n- channel MOSFET M, the Transconductance 9m = 1mA/V, and body effect and channel length modulation effect are to be neglected. The lower cutoff frequency in Hz of the circuit is approximately at RD 10 ΚΩ M C 1μF R10 ΚΩarrow_forwardConsider a MOSFET circuit with transistor parameters VTN=0.8V, KN=0.85 mA/V and A=0.02V-1. i) Determine Rs and RD such that IDo=0.15mA and VDSQ=5.5V ii) Calculate the small signal parameters i) Draw the small signal equivalent circuit and determine the voltage gain. +5V RD Co O +Vo +Vi RL=50K VGs RG Rs -5V Figure Q4barrow_forward
- 1. Suppose the MOSFET drawn has Vrh = 1 V, and In = 1 mA when Voy = 1 V. Vin VDp = 5 V Rp = 5 kN Vout Vs,Vp, VDD Vin (a) Specify the Vin values that lead to off, linear, and saturation modes respectively. (b) Draw a suitable 100 mV amplitude time-domain waveform for Vin that keeps the MOSFET working in saturation mode. (c) Draw the corresponding time-domain waveforms for Vs, Vp, VDD that correspond to Vin from part (b).arrow_forwardExample 7 For the circuit shown, use R1=R2=47k2, RE=5.7k 22, RC=3.3k , RL=10k 2 and Vcc=12V, VBE=0.7V, B=100, IB=8.48uA 1-Draw the DC equivalent circuit. 2-Find the required parameter for the AC small signal model. 3-Draw the small signal model 4-Calculate the voltage gain. 5-Find the input impedance. 6-Find the output impedance. IB=8.84uA, IC=0.884mA, gm-35.36mA/V r=2.828KM. Usig Rin Gain=- 87.74, Rin=2.524k , Rout=3.3k Vcc R₁ R₂ Rc RE RL ww V Voarrow_forwardVcC R2 RC- RI RL R1 RE VEE Assume: B=100, VA=150, Vcc=12V, VɛE=GND, R=2K, R1=160K, R2=300K, Rɛ=3K, Rc=2.2K, and R1=100K. A.)For the circuit draw the AC equivalent circuit (including the small signal model for the transistor). Then compute r„, ľo, and gm. Then compute Av (the gain for the entire circuit), and Rin (for the whole circuit). B.)Convert the circuit to a common-collector circuit. Draw the new circuit (assume the same values for the input and load resistances). Then compute the terminal voltage gain, and Rin (for the whole circuit), re-computing any parameters that you need to solve.arrow_forward
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