Assume that all transistors in the circuit in Figure P10.38 are matched andthat
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Microelectronics: Circuit Analysis and Design
- circuits by using the small signal models of the transistor. Assume the Early voltage of the transistors are infinitely large. Calculate the small-signal input and output impedances of the following Vcc R1 R1 Rout VB RE Rin R2arrow_forwardDesign a voltage divider biased CE stage with emitter degeneration. That stage should support a voltage gain of 5 and an input impedance larger than 3 KOhms with a bias current of 0.5 mA. Assume Beta=100, Is = 5e-17. Neglect the early voltage effect. You also need to provide values for the operating point of this transistor. Find the output resistance of this stage if the early voltage = 20 V.arrow_forwardConsider the MOSFET amplifer circuit shown in Figure below. Assume µnCox(W/L) = 4mA/V2, Vt = 1V Draw an equivalent DC model, and equivalent circuit of the amplifier. Determine the drain current and its overall voltage gain respectively.arrow_forward
- 2 a) i) Draw typical output characteristics of a common emitter npn transistor and clearly identify the active, saturation, and cut off regions on your drawing. ii) Explain how you can find the common emitter de current gain, B, and the common emitter ac current gain, hre, from the common emitter output characteristics of an npn transistor. You need to draw typical output characteristics in scales and provide numerical calculations to support your explanation.arrow_forwardQa: A transistor dissipates 50W in an ambient temperature of 60°C, the thermal resistances are 0-0.5 °CW¹, 8ca-4 °CW. Determine the junction temperature without a heat sink. Determine the thermal resistance of the heat sink to avoid the junction temperature exceeding 180°C. )arrow_forwardQ.1/ Figure below shows a CE power amplifier in which the collector resistor serves also as the load resistor. Assume Boc-Bac-100. a. Determines the de Q-point (Ico and VCEO). b. Determine the voltage gain and the power gain. c. What changes would be necessary to convert the circuit to a pnp transistor with a positive supply? What advantage would this have? +Vce +15 V R 100 LO K 0.5 W 22 juF RE 8.2 S00 mV pp 330 1 R 36 0 100 uFarrow_forward
- Explain how you can find the common emitter de current gain, B, and the common emitter ac current gain, hre, from the common emitter output characteristics of an npn transistor. You need to draw typical output characteristics in scales and provide numerical calculations to support your explanation.arrow_forwardOpen with v Consider class-A emitter follower circuit shown in the figure below. The circuit parameters are V+ = 24 V, V- = -24 V, and RL = 2000. The transistor parameters are B = 50, VBElon) = 0.7 V, and VCElsat) = 0.2 V. The output voltage is to vary between +20 V and -20 V. The minimum current in Q1 is to be ie1 = 20 mA. For vo = 0, find the power dissipated in the first transistor Q1- V+arrow_forwardTime left 1:46:17 A bipolar junction transistor is described in the figure below. The transistor is implemented in the circuit with Vcc, Rc, and RB equal to 16 volts, 2k, and 10kn. Determine the value of Vout if Vin = 1.1V. V... in RB B Vec Ro V E outarrow_forward
- Instruction/s: Draw, Illustrate and label your schematic diagram before solving the problem.2.) Given a Collector -Feedback Biased transistor circuit with voltage at common collector is +10v ,base resistor is 100k ohms, Collector resistor is 10k ohms and Base current is 8.38 micro ampere, ,Voltage at Base-emitter junction is 0.7v. Determine Beta DC , Collector current and Voltage at collector-emitter junction. These might help as a guide to answer the problem...arrow_forwardThe amplifier in the circuit below is driven by a signal generator v, with a small sine wave signal vhose average value is zero. Assume the transistor has a value of B-100, and V-26 mV. a. You need to design the circuit so that the de emitter current IE of the emitter resistor RE to establish the desired de emitter current. = 1 mA. Specify the value b. A de collector voltage of +5 volts is desired. Specify the value of the collector resistor Re to establish the desired de collector voltage. For this part assume that RL 5 K and the Early Effect needs to be considered. The transistor has a VA 100 Volts. Draw the ac small signal equivalent circuit model of the amplifier and determine its voltage gain. 91SV C. 2.5k MM do RE -15 V 84 Vout RLarrow_forwardProblem #6 Analyze the following NMOS based circuits (a) Write the large signal equations of voltage and currents and identify circuit functionalities (b) Derive small signal parameters, A,A,Rin,Rout for both cases (list clearly the assumptions and approximations that you make for simplification with detailed justifications). Obtain these expressions under the condition Rp>>Ro VDD VoD Rp VIN M, RE VOUT VOUT ww RE VIN M1 Rparrow_forward
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