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Consider the Widlar current source shown in Figure 10.9. The circuit parameters are
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Microelectronics: Circuit Analysis and Design
- Q1. For the MOSFET circuit below, input is sinusoidal signal of amplitude IV and frequency 50Hz. Find, the DC operating point, Plot the frequency response and Plot the input, output and transfer characteristics and find out the small signal equivalent. Assume an overdrive voltage of 0.2V Use MOSFET 500nm Library file provided. F Vdd=5V -=80 K R1 (1 1.20Farrow_forwardQ1. The output characteristic of a typical transistor is shown below, where the quiescent point is selected on it. This transistor is used in the bias circuit presented below. Find the suitable values of Rg and Rc to fix the Q-point of the circuit properly. +Vcc = 12 V 12- Is = 70 uA 10- Ig = 60 uA 8- Rc Is = 50 uA Rs 6- Ig= 40 uA 4. Is = 30 uĄ Is = 20 uA B = 100 2- VBE = 0.7 V 0- -2- 2 4 6 8 10 12 14 16 VCE (V) Ic (mA)arrow_forwardThis problem is AC analysis problem. DC analysis is not needed to answer the question. A) If we assume that the peak voltage of Vbe must be less than 10 mV to avoid small signal violations determine the value of Rsig if Vi has a peak amplitude of 1 V and Is = 1mA. Hint: Don't forget r!! Answer: Rsig =. B) If you did the DC analysis on this problem and calculated Vc = 50 mV and Vs = -100 mV what is the maximum amplitude of the output voltage while the circuit stays in active mode. Answer: Vo,max =, When you "verify" a mode of operation you will need to calculate all three voltages (Vc, Ve, VE for BJTS and VG, Vs, Vp for MOSFETS) and show the correct two conditions are satisfied. Assume Capacitors acts like open circuits at DC and short circuits for AC. > Assume the following: 5V o Beta = 100 O VBE = 0.7 o V: (Thermal) = 26 mV o Vr (Threshold) = 2V O VA = - o For MOSFET saturation mode: assume: lp = K(VGs-Vr)? (Assume K = 10 mA/V²). 5kn C2 01 C1 Rsig 1kn 10k Vi IIs :C3 1mA -5Varrow_forward
- 5, a) Determine Vdsat when ID=.5 mA. b) Determine Kn when ID = 0.5 Amps. (Show your work!) c) Determine VTN. (Show your work!) d) Vgs Consider the circuit and corresponding graph, shown below. ID (mA) 0.60 0.50 0.40 0.30 0.20 0.10 0.00 0 0.5 Vds 1 1.5 2 2.5 Vds 3 3.5 4 4.5 5 -Vgs = 1V - Vgs = 1.1V - Vgs = 1.2V - Vgs = 1.3Varrow_forwardFor the BJT circuit shown below, sketch the hybrid equivalent model circuit with labels of voltages, impedances, and currents. ... 1.8k0 Vo 39ka 22ko tuF-POL 10UF-POL 1200 1uF-POL 2N2221 100mv 1.5KHZ ODegarrow_forwardRC = 470 Ω, R1 = 100 kΩ (POT) and RE = 380 Ω take as. What should be done for the VCE voltage to be 7V?arrow_forward
- For the circult shown in the given figure. Rc-2.4 k0, Rg-10 ko. Pmin-50, and Vcc=5 V. Determine the range of values of Vgg 50 Ic that the transistor is in saturation. Assume Vy-0.6 V and VCEsat -0.2 V. The range of values of VB8 Is VBB> 12 V Ra VAR со Va VCE OE RC Nccarrow_forwardIn the circuit below, the voltage source is given as Vs-20cos (1000t). a) Subtract the frequency equivalent of the circuit. b) Find the current I using the frequency equivalent of the circuit. c) Find the active power drawn from the voltage source, Vs, using the frequency equivalent of the circuit.arrow_forwardFigure 1 shows a well-known circuit configuration with the bypassed source resistor using an n-channel D-MOSFET with yos = 20µS. (iv) Calculate transconductance, gm and rd. (v) Calculate the input, Zi and output impedance, Zo for the circuit. (vi) Prove that the equation for the no-load Gain, AvNL, for the circuit is as follows: AvNL = -gm (RD X rd / RD + rd) (vii) Calculate the no-load gain AVNL. (viii) Find the value of VoNL if Vi = 30 mV.arrow_forward
- Draw and design a FET circuit with voltage divider biasing arrangement that has the plot shown in figure (2) of its transfer curve and network equation. This FET is powered from a 24v supply and the value of VDSQ = 10v. 30 21.95mA 20 10 6.7A ID/MA 10 12-5v 15 Figure (2) 18 20 25 wes/warrow_forwardSketch the circuit for a common-source amplifier such that Vgs = 2.4666 V and Id = 1.133mA. Calculate the vi/vo and voltage gain. Tech Parameters: Vtn = 1.3 V kp = 20.45 uA/V^2 W/L = 80arrow_forwardThe self-bias configuration drawn below has an operating point defined by VGSQ = -2.6 V and IDQ = 2.6 mA, with IDSS = 12 mA and VP = -8 V,with VDD=18 V, RD=3.5KὩ, Rs=1.2KὩ and RG=1.2MὩ an applied signal V i . The value of gos is given as 30 mS.a. Determine gm.b. Find rd.c. Find Zi.d. Calculate Zo with and without the effects of rd. Compare the results. e. Calculate Av with and without the effects of rd. Compare the results.arrow_forward
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