Concept explainers
For the circuit in Figure 10.40(a), the transistor parameters are:
Want to see the full answer?
Check out a sample textbook solutionChapter 10 Solutions
Microelectronics: Circuit Analysis and Design
- Vsis (~ Q3 (a) What is the advantage of using MOSFET as compared to BJT at the first stage of multi-stage amplifier? Rais 600 02 www Z₁ (b) Describe the function of the capacitor for the following condition: (1) (ii) SEEE/SKEE 1073 (c) The transistors parameters in Figure Q.3 are given as follow: BJT (iv) ↑ B-350, VBE 0.7 V, Ic=0.3 mA, VT 26 mV, and ro=00 E-MOSFETk 0.8 mA/V², VT- Vas(T) = 1 V C₁ HE a capacitor between stage 1 and stage 2 of a RC-coupled amplifier. bypass capacitor which is commonly used in small signal amplifier. (i) Draw the ac equivalent circuit at middle frequency for circuit in Figure Q.3 by using hybrid-x model. (ii) Determine the values of Z., Ziz and Zo. (iii) Calculate the gain, v/v, in decibel (dB). Draw and label the waveforms vo when v=2 sin 50t [mV] for one complete cycle. + Roi 50 ΚΩ Vi Ra 6 kn Ro 4.5 k Q₁ Rs 3 kQ C₂ не +15 V DS ↑ 22 R₁ 75 k R₂ 9 kn Figure Q.3 Multistage amplifier circuit Re RE 2kQ Rez 1kQ ← 2₂ -C₁ R₂ 20k2 %arrow_forwardConsider the amplifier shown. Assume that the transistor has the following small signal parameters: A gm : = 4 x 10-³ V² ro= 10 x 10³ a) Draw the small signal model. Assume that the frequency is high and model the capacitors as short circuits. b) Using the above small signal model, perform small signal analysis and determine a numerical value for Av. Show your work! Do not make approximations. c) Using the above small signal model, perform small signal analysis and determine a numerical value for Ri. Show your work! Do not make approximations. Vin 5V W 30K 20K 5V W WWW 2K 500 5V WH 5K C1 C2 Voarrow_forwardVcC R2 RC- RI RL R1 RE VEE Assume: B=100, VA=150, Vcc=12V, VɛE=GND, R=2K, R1=160K, R2=300K, Rɛ=3K, Rc=2.2K, and R1=100K. A.)For the circuit draw the AC equivalent circuit (including the small signal model for the transistor). Then compute r„, ľo, and gm. Then compute Av (the gain for the entire circuit), and Rin (for the whole circuit). B.)Convert the circuit to a common-collector circuit. Draw the new circuit (assume the same values for the input and load resistances). Then compute the terminal voltage gain, and Rin (for the whole circuit), re-computing any parameters that you need to solve.arrow_forward
- 3. In the figure shown below, Vmax is measured as 5.9 V and V min measured as 1.2V. 18] In the figure shown below, is measured as 5.9 V an (a) Determine the value of V.. (b) Determine the value of Vm. (c) Determine the modulation index. (d) Suppose we can change the value of V. What is the maximum value that we could use for Vm without causing overmodulation?arrow_forwardConsider the amplifier circuit shown in the figure. The MOSFET parameters are V-0.8V, kn = kn°(W/L) = 2 mA/V² and A=0. (a) Calculate the parameter values at the opeating point, Ip, VGs, and Vps (b) Draw the small-signal equivalent circuit (c) Determine Av=V/Vi (d) Determine the input resistance Rin and the output resistance Rout. +5V RD=7kQ R;=165k2 Vo Cc Answer: (ab In =, Rout Vi Vcs = R2=35k2 R3=0.5k2 Vps = Rin (c) Av = V/VI = (d) Rin = -5V Rout =arrow_forwardConsider the circuit. The transistor has a parameter β that varies between 50 and 200. The operation of the circuit and the electrical variables at the end points must be known. end points. Calculate the following for β = 50 and β = 200. a) lE, VE and VB (DC analysis). b) The input resistance Rin (small signal analysis). c) Voltage gain V0/ Vsig (Small Signal Analysisarrow_forward
- Answer as correctly as possible, I'll upvote. The MOSFET is designed to be biased on the triode (linear) region. Write the appropriate equation for the small signal voltage gain (vo/vi) as a function of the quiescent point bias voltages VB and VOQ, and the threshold voltage VTH.arrow_forwardConsider the source follower circuit in Figure shown below, IQ = 10 mA VTP = -2 V, Kp = 5mA/V2, RL = 680 n, and 2 = 0.01 V-1. Where Kp=1/2 k'p(W/L). (IV) What is the formula for Vi? (v) Determine the small-signal voltage gain (V/V:). (vi) Find the output resistance Ro. V* = 5 V KL RG= 200 k2 V=-5 V wwarrow_forwardExample 7 For the circuit shown, use R1=R2=47k2, RE=5.7k 22, RC=3.3k , RL=10k 2 and Vcc=12V, VBE=0.7V, B=100, IB=8.48uA 1-Draw the DC equivalent circuit. 2-Find the required parameter for the AC small signal model. 3-Draw the small signal model 4-Calculate the voltage gain. 5-Find the input impedance. 6-Find the output impedance. IB=8.84uA, IC=0.884mA, gm-35.36mA/V r=2.828KM. Usig Rin Gain=- 87.74, Rin=2.524k , Rout=3.3k Vcc R₁ R₂ Rc RE RL ww V Voarrow_forward
- Which of the following models can be used for BJT AC SImall signal amplifier circuit analysis? i. hybrid model ii. re model iii. transconductance model iv. Eber's Moll model II, ili and iv i,i and iv O ii and iv O i and iiarrow_forwardThe amplifier circuit below has a single ac input and two ac outputs. Assuming transistor parameters of B = 100 and Vu = 0.6 V: a) Detemine the Q point 5) Is the transistor in the active region? Explain thoroughly. c) Construct the T-model of the transistor with all parameters labelled and evaluated. Assume room temperature. d) Draw a complete small signal circuit model, then find the voltage gain for both outputs. e) Based on the analysis results, what is the function of this circuit? Suggest a proper application. 2) Assuming that cach output is feeding a 50-kN resistor, determine the total voltage gain and current gain for both outputs. Also, calculate the amplifier input resistance and the amplifier output resistances. 10 V 10 V Rc= 3.3 kl 100 kN 50 kΩ Rg = 3 kſlarrow_forward2) Consider the circuit given below. (Assume: K-4mA/V', Vt=-1V, A=0, (K= µCox.(W/L)) da Perform DC analysis and calculate Va. Vsg, Vs, voltages, and Ip, gm, ro values bo Draw a small-signal equivalent circuit Co Calculate Av, Rin, Rout values as shown on the schematic Also ) satwaton mode Test for Fill inthe table VG VSG O2m A Rin Vs QUin ID vo Coo 9m Ro Av Rout Rin Routarrow_forward
- EBK ELECTRICAL WIRING RESIDENTIALElectrical EngineeringISBN:9781337516549Author:SimmonsPublisher:CENGAGE LEARNING - CONSIGNMENT