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Consider the NMOS cascode current source in Figure 10.18. The circuitparameters are
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Microelectronics: Circuit Analysis and Design
- Consider a MOSFET circuit with transistor parameters VTN=0.8V, KN=0.85 mA/V and A=0.02V-1. i) Determine Rs and RD such that IDo=0.15mA and VDSQ=5.5V ii) Calculate the small signal parameters i) Draw the small signal equivalent circuit and determine the voltage gain. +5V RD Co O +Vo +Vi RL=50K VGs RG Rs -5V Figure Q4barrow_forwardQ1) Design the bias of MOSFET such that the Q-point is in middle of saturation region. Assume Vtn =1v, kn=1ma/v, clm factor=0.015 and ri=(R1||R2) =100k .design the circuit such that Idq =2ma and Q-point is in the middle of the saturation region. VDD = 12 V Rp2 ID=2 mA Ovo Cc wwarrow_forwardAssume Icq = 3mA, Vceq = 10V for the given transistor circuit. Find the R1 and Rc values.arrow_forward
- 3. In the figure shown below, Vmax is measured as 5.9 V and V min measured as 1.2V. 18] In the figure shown below, is measured as 5.9 V an (a) Determine the value of V.. (b) Determine the value of Vm. (c) Determine the modulation index. (d) Suppose we can change the value of V. What is the maximum value that we could use for Vm without causing overmodulation?arrow_forwardA depletion MOSFET with IDSS=12mA, VP=-4V is operated at VGS=-0.5V. What is the value of transconductance at this operating point.arrow_forwardConsider the circuit. The transistor has a parameter β that varies between 50 and 200. The operation of the circuit and the electrical variables at the end points must be known. end points. Calculate the following for β = 50 and β = 200. a) lE, VE and VB (DC analysis). b) The input resistance Rin (small signal analysis). c) Voltage gain V0/ Vsig (Small Signal Analysisarrow_forward
- Example 10-1: 1. Design a voltage-divider bias circuit using a Vcc supply of +18 V, and an npn silicon transistor with B of 80. Choose Rc = 5RE, and set Ic at 1 mA and the stability factor S(Ico) at 3.8. 2. For the circuit designed in part (1), determine the change in Ic if a change in operating conditions results in Ico increasing from 0.2 to 10 µA, VBE drops from 0.7 to 0.5 V, and B increases 25%. 3. Calculate the change in Ic from 25° to 75°C for the same circuit designed in part (1), if Ico = 0.2 µA and VBE = 0.7 V.arrow_forward2. This is a small signal problem. Suppose the MOSFETS drawn have lp = 1 mA when VGS = 2.5 V, and Vth = 0.5 V. Suppose the BJTs drawn have Ic = 1 mA when VBE = 0.7 V. Av VDD = 5V VDD VDD T T Rc = 1 kn Vin RB2 = 10 kn RB1 = 10 kn w/li w Rp = 1 kn R₁ Vout (a) Derive voltage gain Ay and input impedance Zin assuming R₁ ➡8. (b) Plot Ay as a function of R, assuming R, is attached between Vout and ground. (c) Rederive Ay and Zin assuming Roo and after swapping the BJT and MOSFET. RLarrow_forwardVcC R2 RC- RI RL R1 RE VEE Assume: B=100, VA=150, Vcc=12V, VɛE=GND, R=2K, R1=160K, R2=300K, Rɛ=3K, Rc=2.2K, and R1=100K. A.)For the circuit draw the AC equivalent circuit (including the small signal model for the transistor). Then compute r„, ľo, and gm. Then compute Av (the gain for the entire circuit), and Rin (for the whole circuit). B.)Convert the circuit to a common-collector circuit. Draw the new circuit (assume the same values for the input and load resistances). Then compute the terminal voltage gain, and Rin (for the whole circuit), re-computing any parameters that you need to solve.arrow_forward
- Draw, Illustrate and label your schematic diagram before solving the problem. 3) Given an Emitter-Stabilize Biased transistor circuit with beta DC is 250,Base resistor is 150 ohms, collector resistor is 1.5k ohms ,emitter resistor is 500 ohms ,emitter voltage supply is -5v and Voltage at common collector is +28V,Voltage at Base-emitter junction is 0.7v,. Determine Base current, Collector current and Voltage at collector-emitter junction.arrow_forwardCoonsider the common emitter amplifier shown in figure below. Assume a β of 100, VBE = 0.7V, VT = 25mA and VA = 100V. Draw an equivalent DC model and determine the rπ, transconductance (gm) and ro. Draw an equaivalent AC model using the small-signal model Find an expression for vbe and vo in terms of the input voltagearrow_forwardExample 7 For the circuit shown, use R1=R2=47k2, RE=5.7k 22, RC=3.3k , RL=10k 2 and Vcc=12V, VBE=0.7V, B=100, IB=8.48uA 1-Draw the DC equivalent circuit. 2-Find the required parameter for the AC small signal model. 3-Draw the small signal model 4-Calculate the voltage gain. 5-Find the input impedance. 6-Find the output impedance. IB=8.84uA, IC=0.884mA, gm-35.36mA/V r=2.828KM. Usig Rin Gain=- 87.74, Rin=2.524k , Rout=3.3k Vcc R₁ R₂ Rc RE RL ww V Voarrow_forward
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