Consider the class−AB output stage shown in Figure 8.37. The transistor parameters are
Figure 8.37 Figure for Exercise TYU 8.8
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Microelectronics: Circuit Analysis and Design
- Measurements taken with an E-MOSFET indicate that when VGS=+4V, ID=8mA, and when VGS=+6V, ID=32mA. Determine the value of k.arrow_forwardProblem-5 The LED in Figure below requires 30 mA to emit a sufficient level of light. Therefore, the collector current +Vcc should be approximately 30 mA. For the following circuit values, determine the Re amplitude of the square wave input voltage necessary to make sure that the transistor saturates. Use double the minimum value of base current as a safety ON ON margin to ensure saturation. OFF Vcc = 9 V, VCE(sat) = 0.3 V, Rc = 220 N, RB = 3.3 kÝ Bpc =50, and VleD = 1.6 V. 1arrow_forwardTEST Read the question carefully. Write the letter for each correct answer in the blank space provided. A 1. Maximum power is delivered from a source of power to a load when the a. load current is equal to the power source current b. impedance of the load is equal to the output impedance of the power source c. output impedance of the power source is high compared to the impedance of the load d. output impedance of the power source is low compared to the impedance of the load 2. The emitter follower is a (an) a. impedance matching device b. high gain voltage amplifier c. phase inverter d. combination power and voltage amplifier 3. The emitter follower uses a. no collector resistor b. a forward bias collector-base junction c. negative feedback (degeneration) d. an NPN transistor only 4. The emitter follower has output resistance. a. high, high b. low, low c. low, high d. high, low input resistance and 5. The current gain of an emitter follower is a. less than 1 b. equal to 1 c. greater…arrow_forward
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- (ii) Calculate the RB, Rc, and the minimum power rating of the transistor (Note: the actual power rating should be greater).arrow_forwardA collector modulator is a balanced modulator. True False The information or intelligence is at the sidebands. O True False The tank circuit is used to increase carrier frequency in the diode modulator. True O Falsearrow_forward(b) Draw the ID - VD curves for this MOSFET for ±VD for V₁ = 0 and V₁ = 1 V. VȚ = 1V. n V₁ + p-type D ID V₁arrow_forward
- Answwr for both circuit... Answer for both cktarrow_forwardQa: A transistor dissipates 50W in an ambient temperature of 60°C, the thermal resistances are 0-0.5 °CW¹, 8ca-4 °CW. Determine the junction temperature without a heat sink. Determine the thermal resistance of the heat sink to avoid the junction temperature exceeding 180°C. )arrow_forwardcircuit shown in the figure, Kn = 2mA / V2, VIN = 0.7V for Mi mosfeti. So, what kind of relationship should there be between R1 and R2 resistance for mosfet to work at saturation?arrow_forward
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