Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Question
Chapter 8, Problem 8.27P
(a)
To determine
Theexpression for the value of the voltage
(b)
To determine
The value of the maximum output voltage, the values of
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QUE STION FIVE
A) For the drauit of Figure 8, determine the following parameters Ig, Ip, Ves,VD. Vac and
then state the mode in which the BJT is operating.
Use either the graphical (using a graph paper) approach or the mathematical
approach
Vcc
Given :
Vcc = 20 V
oss = 8mA
%3D
RB
Vc
V, =-4 V
Vss =-1 V
B =100
R3 = 470 2
Rc = 36 kn
Rs=1 k2
VD
RG
RG = 2 M2
%3!
Vss
Figure 8
B) A magnetic drcuit comprises three parts in series, each of uniform cross-ectional area (c.s.a).
They are: part (a) al ength of 80mm and c.s.a. 50mm, part (b) alength of 60mm and c.s.a.
90mm, pert (c) anairgap of length 0.5mm and c.s.a. 150mm.
A coil of 4000 tums is wound on part (b), and the flux density in the airgap is 0.30 T. Assuming
that all the flux passes through the given circuit, and that the relative permeability u, is 1300.
i.
Draw a well labdledmagnetic andequi valent electric circuit.
Estimate the coil current to produce such a flux density.
ii.
. Design a fixed bias-transistor circuit using V = Vcc = 10 V for a Q-point of Iç = 5 mA and Va 4 V.
Assume Boc = 100.The design involves finding R, and Rc.
inakomeont thot one is hiased
As a maintenance engineer in a semiconductor company, you are given a task to replace the current version of dc-biasing circuit for a faulty tester machine. This dc-biasing circuit used an n-channel JFET as shown in Figure 2. Re-design a new dc-biasing circuit using an n-channel D-MOSFET that can produce a similar output current, IDQ as the previous circuit. Your tasks are:
(i) Calculate the operating point (IDQ and VGSQ) of the dc-biasing circuit in Figure 2. Then sketch the JFET network transfer curve (ID and VGS).
(ii) Without changing the circuit configuration, calculate the values of source resistor, RS and RB to achieve this objective. Determine the commercial value of the new RS and RB. For cost reduction reason, the values of RD, RA and VDD should be maintained. The chosen D-MOSFET has a maximum drain current of 8 mA and gate-source cutoff voltage of – 15V. The new RS value should be 3 times larger than the old RS used in the JFET network to compensate for the high…
Chapter 8 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 8 - Prob. 8.1EPCh. 8 - Prob. 8.2EPCh. 8 - Prob. 8.3EPCh. 8 - Prob. 8.1TYUCh. 8 - Prob. 8.2TYUCh. 8 - Prob. 8.3TYUCh. 8 - Prob. 8.4EPCh. 8 - Prob. 8.5EPCh. 8 - Prob. 8.7EPCh. 8 - Prob. 8.4TYU
Ch. 8 - Prob. 8.5TYUCh. 8 - Prob. 8.6TYUCh. 8 - A transformercoupled emitterfollower amplifier is...Ch. 8 - Prob. 8.7TYUCh. 8 - Prob. 8.9EPCh. 8 - Prob. 8.11EPCh. 8 - Consider the classAB output stage shown in Figure...Ch. 8 - From Figure 8.36, show that the overall current...Ch. 8 - Prob. 1RQCh. 8 - Describe the safe operating area for a transistor.Ch. 8 - Why is an interdigitated structure typically used...Ch. 8 - Discuss the role of thermal resistance between...Ch. 8 - Define and describe the power derating curve for a...Ch. 8 - Define power conversion efficiency for an output...Ch. 8 - Prob. 7RQCh. 8 - Describe the operation of an ideal classB output...Ch. 8 - Discuss crossover distortion.Ch. 8 - What is meant by harmonic distortion?Ch. 8 - Describe the operation of a classAB output stage...Ch. 8 - Describe the operation of a transformercoupled...Ch. 8 - Prob. 13RQCh. 8 - Sketch a classAB complementary MOSFET pushpull...Ch. 8 - What are the advantages of a Darlington pair...Ch. 8 - Sketch a twotransistor configuration using npn and...Ch. 8 - Prob. 8.1PCh. 8 - Prob. 8.2PCh. 8 - Prob. 8.3PCh. 8 - Prob. 8.4PCh. 8 - Prob. 8.5PCh. 8 - Prob. D8.6PCh. 8 - A particular transistor is rated for a maximum...Ch. 8 - Prob. 8.8PCh. 8 - For a power MOSFET, devcase=1.5C/W , snkamb=2.8C/W...Ch. 8 - Prob. 8.10PCh. 8 - The quiescent collector current in a BiT is ICQ=3A...Ch. 8 - Prob. 8.12PCh. 8 - Prob. 8.13PCh. 8 - Prob. 8.14PCh. 8 - Prob. 8.15PCh. 8 - Prob. 8.16PCh. 8 - Consider the classA sourcefollower circuit shown...Ch. 8 - Prob. 8.18PCh. 8 - Prob. 8.19PCh. 8 - Prob. 8.20PCh. 8 - Prob. 8.21PCh. 8 - Consider an idealized classB output stage shown in...Ch. 8 - Consider an idealized classB output stage shown in...Ch. 8 - Prob. 8.24PCh. 8 - For the classB output stage shown in Figure P8.24,...Ch. 8 - Prob. 8.26PCh. 8 - Prob. 8.27PCh. 8 - Consider the classAB output stage in Figure P8.28....Ch. 8 - Prob. 8.29PCh. 8 - Prob. D8.30PCh. 8 - Prob. 8.31PCh. 8 - Prob. D8.32PCh. 8 - Consider the transformercoupled commonemitter...Ch. 8 - The parameters for the transformercoupled...Ch. 8 - A BJT emitter follower is coupled to a load with...Ch. 8 - Consider the transformercoupled emitter follower...Ch. 8 - A classA transformer-coupled emitter follower must...Ch. 8 - Repeat Problem 8.36 if the primary side of the...Ch. 8 - Consider the circuit in Figure 8.31. The circuit...Ch. 8 - Prob. D8.40PCh. 8 - The value of IBiass in the circuit shown in Figure...Ch. 8 - The transistors in the output stage in Figure 8.34...Ch. 8 - Consider the circuit in Figure 8.34. The supply...Ch. 8 - Prob. 8.44PCh. 8 - Prob. 8.45PCh. 8 - Consider the classAB MOSFET output stage shown in...Ch. 8 - Prob. 8.47PCh. 8 - Consider the classAB output stage in Figure P8.48....Ch. 8 - For the classAB output stage in Figure 8.36, the...
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- Using the re model circuit, determine the total voltage gain for the BJT circuit shown below. Show the details of your work. 22V ... 5.6k0 330k Vo + 10UF-POL B = 80 1200 10UF-POL To = 40 kN 2N2221 6.8k) Vs 4700 22UF-POLarrow_forwardIt is connected to the input of a transistor (BJT) amplifier circuit with a gain of "-50" with a peak value of 100mV. a sine sign is applied a) Draw the circuit. b) Underline the input and output voltages by specifying their values.arrow_forwardA circuit is built around a bi-polar NPN transisor. The base network has a diode and a capacitor in series while the collector is connected to the power supply through a resistor. if the resistor is connected to ground; i) draw the circuit ii) provide all the masking layout of the circuitarrow_forward
- Given IDSS = 8mA and Vp= -4V. Sketch the drain and transconductance curve for VGS = +2V,+1V.arrow_forwardFor the circuit seen below, the VI input signal seen next to the circuit is applied. Calculate the Vo output voltage and also draw the output curve.arrow_forwardQ-3. Find the drain-source voltage, Vos, for the E- MOSFET circuit given below. The device parameters are: Ioss = 4 mA and Vm = 2 V. +15V Rp- 2k 4M R1 + Vps 2M R2arrow_forward
- Determine VB, VE, VC, VCE, IB, IE, and IC in Figure. The 2N3904 is a general purpose transistor with a typical BDC 200 Vcc +30 V WWII VCE VB R₁ • 22 ΚΩ IC(mA) Chọn... * Chọn... * IB(UA) Chọn... * IE(MA) Chọn... ◆ Chọn... * Chọn... * Chọn... * VE VC R₂ ´ 10 ΚΩ www Rc 1.0 ΚΩ 2N3904 PDC=200 RE 1.0 ΚΩarrow_forwardDesign a voltage-divider bias network using a supply of 24 V, a transistor with a beta of 100, VBE = 0.7 V ,and an operating point of ICQ = 4 mA and VCEQ = 8 V, R1 = 6R2. Choose VE =1/8 VCC.arrow_forwardFor the circuit shown in Figure Vec= 22 V, Re= 5.6Kr Nc %3D R8- 330k2, B= 80 Rc Rg %3D Find the solution to Vi everything that comes 1_value of Zo .....ohm . NOTE: 1.2ks 3 The value of re is . . h is When the output is taken from the Emitter terminal of 0.47ks3 the transistor as shown in Figure. CE 2 The value of Zi is 4 The value of Ai is . wwarrow_forward
- For the circuit shown below: Find the maximum and minimum Zener current.arrow_forwardQuestiona. In an experiment the voltage required for the device is 9V dc but unfortunately the transformer available is of 220-6 Vdc. Design a circuit which can power the device (use only methods that we have studied excluding Zener diode)b. Explain the behavior of the following circuits if the input signal is triangular wave of peak voltage 5V and the biasing battery of 3Varrow_forwardin the circuit given in the figure , VDD = 20 V ,Rs= 1 kohm , VGSQ= -2.6 v, IDQ = 2.6 mA.the transistor specifically has values of IDSS = 8mA , Vp= -6 V , and gos =25 µS. what should be the RD resistance for the output voltage to be -24.85 mV when an AC voltage of 12 mV is applied to the transistor input ? Options: a) 3.3 kohm b) 4.2 kohm c) 4.5 kohm d) 3.6 kohm e) 3.9 kohmarrow_forward
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