Consider the circuit in Figure 8.34. The supply voltages are
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Microelectronics: Circuit Analysis and Design
- Design a bias circuit for NPN silicon transistor having a nominal B-100 to be used in voltage divider circuit with Q-point of Ic 10 mA and VCE= 10 V. Use standard valued 5% resistors and draw a schematic %3D diagram of your designarrow_forwardThe term "Bipolar" in Bipolar Junction Transistor (BJT) refers to 5 Ja) Two junctions c) Two polarity carriers (electrons & holes) b) Two Diodes d) Two resistances negative of dinda b' nositivoarrow_forwardIf VCC = +18 V, voltage-divider resistor R1 is 4.7 kOhms, and R2 is 1500ohms, Solve for base bias voltage:4.35 V8.7 V2.9 V0.7 V Solve for VBE: 8.7 V0.3 V4.35 V0.7 Varrow_forward
- The D-MOSFET in the figure has: IDSS-10 mA. The drain to source voltage equals approximately: VDD +15 V 0000 1 Ro 10 ΜΩ 3 V -4.52 V 4V 5.4 V RD 1.2 knarrow_forwardA stabilization circuit has a stability factor of 0.04 and an internal resistance of 5 2. The unstabilized voltage can vary between 75 and 100 V, and the load current can vary from 40 to 80 mA. Determine the maximum and minimum values for the stabilized load voltage.arrow_forward5. From the figure at the working point (DC Bias), find the parameters. The work of the circuit is as follows. When transistor Q3 is®=120, VBE voltage is 0.7 volts, VCC supply voltage is 5 volts, and VEE supply is -5 volts. R15, R17, R16 and R18 are 25k, 25k, 550, and 370 ohms, respectively. VCC R15 R16 i Vc VB Q3 R17 R18 VEEO Voltage value VTH : Answer.... IC current : . 2 Resistance value Rth : Answer...... 5 VCE Voltage :; IB current value : Answer... S VC Voltage :;arrow_forward
- a) List and explain the plannar process technology as applied to IC fabrication b) A circuit is built around a bi-polar NPN transistor. The Base network has a resistor (RB) and diode (DB) in series with the cathode of the diode connected to the base while the collector is connected to a power supply (Voc) through a resistor (Rc). Ifthe emitter is connected to ground: 1 Draw the circuit ii. Provide all the masking layout of the circuitarrow_forward3. MOSFET diff pair with 2 mA tail current Iss and 5kOhm drain resistors Ro. Kn = 1 mA/N, VIN=2V, lambda is negligible. Positive supply (VDD) is 10V, negative supply is -10v. Fill out the following table: Vin1 Vin2 Vin(diff) VD1 = Vx VD2 = Vy Vo(diff) = Vx-Vy Vs1=Vs2 =Vin1-Vin2 -3 1 1 -1 -1 +1 -1 -1 1 VDD Rp ERD Y M1 M2 Isarrow_forwardAn npn transistor circuit as shown in figure below has a = 0.985 and VBE = 0.3V. If Vcc=16V, calculate R1 and Re to place Q point at Ic = 2mA, VCE = 6 volts. + Vcc=16 V R₂ +4₂ 20 k 2kQ2arrow_forward
- EHide bla This course Determine Vx and the mode of operation of the PNP transistor shown in the figure below. Assume Is = 2.5x106 A,B- 50, VA =, and Rc = 0.1 KO. Vec 2 V EX 1.2 V- Re幸 Select one: O a.1.153 V. Active Mode O60577V. Active Mode Oc 023 V. Active Mode d. None of these Oe 2306 V Saturation Mode For the circuit shewn in the figure below. assume l = 3 107A V= 26mv. B= 100, and V = The value of r-5arrow_forwardFor a voltage divider JFET circuit with the circuit components shown below, Determine ID in mA graphically. And, show the graph.arrow_forward1-The output voltage of an emitter follower is a-In phase with Vin . b-Much greater than Vin. c-180° out of phase. d-Generally much less than Vin • 2-The ac emitter resistance of an emitter follower a-Equal the de emitter resistance. b-Is larger than the load resistance. c-Is B times smaller than the load resistance. d-Is usually less than the load resistance. 3-A common-base amplifier can be used when a-Matching low to high impedance. b-A voltage gain without a current gain is required. c-A high- frequency amplifier is needed. d-All of the above. 4-If the voltage generator is 5 mV in an emitter follower, the output voltage across the load is closest to a-5 mV. b-150mV. c-0.25 mV. d-0.5 mV.arrow_forward
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