Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Question
Chapter 8, Problem D8.6P
(a)
To determine
The design for the bias circuit such that the Q-point is in the center of the load line.
(b)
To determine
The value of the power dissipated in the transistor at
(c)
To determine
The value of minimum rated
(d)
To determine
The value of ac power delivered to
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3. Write down which transistor structure each curve characteristic belongs to in the figure.
Ip
-VGS
-VGS
+VGs
(c)
VGS
(b)
(a)
A Bipolar junction Transistor with curreat amplification factor being 100, Input Base current is 50μA. Collector voltage is 10 V and biasing voltage being +20 V.
Find followings
a. Collector current
b. Resistance (R1)
c. Collector voltage , Emitter voltage , Base Voltage & Collector-Emitter Voltage.
For the Enhancement-type MOSFET in following figure,
1.Determine IDQ and VGSQ
Chapter 8 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 8 - Prob. 8.1EPCh. 8 - Prob. 8.2EPCh. 8 - Prob. 8.3EPCh. 8 - Prob. 8.1TYUCh. 8 - Prob. 8.2TYUCh. 8 - Prob. 8.3TYUCh. 8 - Prob. 8.4EPCh. 8 - Prob. 8.5EPCh. 8 - Prob. 8.7EPCh. 8 - Prob. 8.4TYU
Ch. 8 - Prob. 8.5TYUCh. 8 - Prob. 8.6TYUCh. 8 - A transformercoupled emitterfollower amplifier is...Ch. 8 - Prob. 8.7TYUCh. 8 - Prob. 8.9EPCh. 8 - Prob. 8.11EPCh. 8 - Consider the classAB output stage shown in Figure...Ch. 8 - From Figure 8.36, show that the overall current...Ch. 8 - Prob. 1RQCh. 8 - Describe the safe operating area for a transistor.Ch. 8 - Why is an interdigitated structure typically used...Ch. 8 - Discuss the role of thermal resistance between...Ch. 8 - Define and describe the power derating curve for a...Ch. 8 - Define power conversion efficiency for an output...Ch. 8 - Prob. 7RQCh. 8 - Describe the operation of an ideal classB output...Ch. 8 - Discuss crossover distortion.Ch. 8 - What is meant by harmonic distortion?Ch. 8 - Describe the operation of a classAB output stage...Ch. 8 - Describe the operation of a transformercoupled...Ch. 8 - Prob. 13RQCh. 8 - Sketch a classAB complementary MOSFET pushpull...Ch. 8 - What are the advantages of a Darlington pair...Ch. 8 - Sketch a twotransistor configuration using npn and...Ch. 8 - Prob. 8.1PCh. 8 - Prob. 8.2PCh. 8 - Prob. 8.3PCh. 8 - Prob. 8.4PCh. 8 - Prob. 8.5PCh. 8 - Prob. D8.6PCh. 8 - A particular transistor is rated for a maximum...Ch. 8 - Prob. 8.8PCh. 8 - For a power MOSFET, devcase=1.5C/W , snkamb=2.8C/W...Ch. 8 - Prob. 8.10PCh. 8 - The quiescent collector current in a BiT is ICQ=3A...Ch. 8 - Prob. 8.12PCh. 8 - Prob. 8.13PCh. 8 - Prob. 8.14PCh. 8 - Prob. 8.15PCh. 8 - Prob. 8.16PCh. 8 - Consider the classA sourcefollower circuit shown...Ch. 8 - Prob. 8.18PCh. 8 - Prob. 8.19PCh. 8 - Prob. 8.20PCh. 8 - Prob. 8.21PCh. 8 - Consider an idealized classB output stage shown in...Ch. 8 - Consider an idealized classB output stage shown in...Ch. 8 - Prob. 8.24PCh. 8 - For the classB output stage shown in Figure P8.24,...Ch. 8 - Prob. 8.26PCh. 8 - Prob. 8.27PCh. 8 - Consider the classAB output stage in Figure P8.28....Ch. 8 - Prob. 8.29PCh. 8 - Prob. D8.30PCh. 8 - Prob. 8.31PCh. 8 - Prob. D8.32PCh. 8 - Consider the transformercoupled commonemitter...Ch. 8 - The parameters for the transformercoupled...Ch. 8 - A BJT emitter follower is coupled to a load with...Ch. 8 - Consider the transformercoupled emitter follower...Ch. 8 - A classA transformer-coupled emitter follower must...Ch. 8 - Repeat Problem 8.36 if the primary side of the...Ch. 8 - Consider the circuit in Figure 8.31. The circuit...Ch. 8 - Prob. D8.40PCh. 8 - The value of IBiass in the circuit shown in Figure...Ch. 8 - The transistors in the output stage in Figure 8.34...Ch. 8 - Consider the circuit in Figure 8.34. The supply...Ch. 8 - Prob. 8.44PCh. 8 - Prob. 8.45PCh. 8 - Consider the classAB MOSFET output stage shown in...Ch. 8 - Prob. 8.47PCh. 8 - Consider the classAB output stage in Figure P8.48....Ch. 8 - For the classAB output stage in Figure 8.36, the...
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- In the circuit shown in the figure, the internal resistance of a voltage source is given as 3 ohms. Load values are such that R = 20 ohms and X = 20 ohms. The effective value of the VAB voltage at the load ends is 220 V. (Frequency is 50 Hz). What is the active power consumed by the load? (Do not take into account 3 ohms in calculations)arrow_forward(a) What is the output current IO in the circuitshown if −VEE = −10 V andR = 20 ohm? Assume that the MOSFET is saturated.(b) What is the minimum voltage VDDneeded to saturate the MOSFET if VTN = 2.5 Vand K'n = 0.25 A/V2. (c) What must be the powerdissipation ratings of resistor R and the FET.arrow_forwardquestion from book ELECTRONIC CIRCUIT DESIGN : Question No. 2 Analyze the circuit in figure 2 to find IDQ, VGSQ and VDS. As given in circuit, the IDSS is8mA but a customer requires current more than this IDSS. Suggest a change in the circuit resistorswithout changing the MOSFET. Prove your suggested circuit by doing load line analysis. Is the Q pointin the new circuit is located at correct location?arrow_forward
- 8.17c Copper extension leads are installed as shown in Figure 8.48b. For an output voltage of 7.947 mV and a reference junction temperature of 0⁰C, what is the temperature of the measuring junction?arrow_forwardQa: A transistor dissipates 50W in an ambient temperature of 60°C, the thermal resistances are 0-0.5 °CW¹, 8ca-4 °CW. Determine the junction temperature without a heat sink. Determine the thermal resistance of the heat sink to avoid the junction temperature exceeding 180°C. )arrow_forwardA) Find and draw the equivalent re circuit model. Calculate the voltage gain.arrow_forward
- In this voltage divider bias circuit, the input is at the base. Output is at the emitter with a high input resistance and low output resistance. The maximum voltage gain is 1 and the coupling capacitors must have a negligible reactance at the frequency of operation. (use to answer a and b) a. Derive the expression for the voltage gain, current gain, and power gain in terms of power delivered to the load, R. b. Sketch both the DC and AC equivalent circuits. c. Derive the expression for ripple factor of Half Wave Rectification with a capacitor filter.arrow_forwardIn a full-bridge dc-dc converter using PWM bipolar voltage switching, analytically obtain the value of (V/V) which results in the maximum (peak-peak) ripple in the output current i,. Calculate this ripple in terms of Va, La, and farrow_forwardFor the Enhancement-type MOSFET in following figure, Determine VD, and VSarrow_forward
- Draw the circuit diagram of a resistance–capacitance coupled source followerarrow_forwardFigure below shows a circuit for a pulse width modulator (PWM) amplifier. I. Describe how the circuit achieves low power dissipation 2. Describe with the aid of drawings the signal waveform shapes at points, A, B and Carrow_forwardcircuit diagram with a load ,for the Power MOSFETarrow_forward
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