Microelectronics: Circuit Analysis and Design
Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 8, Problem 4RQ

Discuss the role of thermal resistance between various junctions in a high−power transistor structure.

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Problem 2. A MOSFET structure with an n-type substrate (also called 'body') has pn-junction diodes between 1) the source and the body, and 2) the drain and the body. If the substrate was grounded, and a -1 V was placed on the source electrode, and a 2 V was placed on the drain electrode, what would be the regions of operation of both the source/body and drain/body pn-junction diodes?
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Chapter 8 Solutions

Microelectronics: Circuit Analysis and Design

Ch. 8 - Prob. 8.5TYUCh. 8 - Prob. 8.6TYUCh. 8 - A transformercoupled emitterfollower amplifier is...Ch. 8 - Prob. 8.7TYUCh. 8 - Prob. 8.9EPCh. 8 - Prob. 8.11EPCh. 8 - Consider the classAB output stage shown in Figure...Ch. 8 - From Figure 8.36, show that the overall current...Ch. 8 - Prob. 1RQCh. 8 - Describe the safe operating area for a transistor.Ch. 8 - Why is an interdigitated structure typically used...Ch. 8 - Discuss the role of thermal resistance between...Ch. 8 - Define and describe the power derating curve for a...Ch. 8 - Define power conversion efficiency for an output...Ch. 8 - Prob. 7RQCh. 8 - Describe the operation of an ideal classB output...Ch. 8 - Discuss crossover distortion.Ch. 8 - What is meant by harmonic distortion?Ch. 8 - Describe the operation of a classAB output stage...Ch. 8 - Describe the operation of a transformercoupled...Ch. 8 - Prob. 13RQCh. 8 - Sketch a classAB complementary MOSFET pushpull...Ch. 8 - What are the advantages of a Darlington pair...Ch. 8 - Sketch a twotransistor configuration using npn and...Ch. 8 - Prob. 8.1PCh. 8 - Prob. 8.2PCh. 8 - Prob. 8.3PCh. 8 - Prob. 8.4PCh. 8 - Prob. 8.5PCh. 8 - Prob. D8.6PCh. 8 - A particular transistor is rated for a maximum...Ch. 8 - Prob. 8.8PCh. 8 - For a power MOSFET, devcase=1.5C/W , snkamb=2.8C/W...Ch. 8 - Prob. 8.10PCh. 8 - The quiescent collector current in a BiT is ICQ=3A...Ch. 8 - Prob. 8.12PCh. 8 - Prob. 8.13PCh. 8 - Prob. 8.14PCh. 8 - Prob. 8.15PCh. 8 - Prob. 8.16PCh. 8 - Consider the classA sourcefollower circuit shown...Ch. 8 - Prob. 8.18PCh. 8 - Prob. 8.19PCh. 8 - Prob. 8.20PCh. 8 - Prob. 8.21PCh. 8 - Consider an idealized classB output stage shown in...Ch. 8 - Consider an idealized classB output stage shown in...Ch. 8 - Prob. 8.24PCh. 8 - For the classB output stage shown in Figure P8.24,...Ch. 8 - Prob. 8.26PCh. 8 - Prob. 8.27PCh. 8 - Consider the classAB output stage in Figure P8.28....Ch. 8 - Prob. 8.29PCh. 8 - Prob. D8.30PCh. 8 - Prob. 8.31PCh. 8 - Prob. D8.32PCh. 8 - Consider the transformercoupled commonemitter...Ch. 8 - The parameters for the transformercoupled...Ch. 8 - A BJT emitter follower is coupled to a load with...Ch. 8 - Consider the transformercoupled emitter follower...Ch. 8 - A classA transformer-coupled emitter follower must...Ch. 8 - Repeat Problem 8.36 if the primary side of the...Ch. 8 - Consider the circuit in Figure 8.31. The circuit...Ch. 8 - Prob. D8.40PCh. 8 - The value of IBiass in the circuit shown in Figure...Ch. 8 - The transistors in the output stage in Figure 8.34...Ch. 8 - Consider the circuit in Figure 8.34. The supply...Ch. 8 - Prob. 8.44PCh. 8 - Prob. 8.45PCh. 8 - Consider the classAB MOSFET output stage shown in...Ch. 8 - Prob. 8.47PCh. 8 - Consider the classAB output stage in Figure P8.48....Ch. 8 - For the classAB output stage in Figure 8.36, the...
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