Electrical Engineering A uniformly doped silicon pnp bipolar transistor is to be designed with NĘ = 1019 cm³ and Nc = 1016 cm³. The metallurgical base width is 0.75 µm. Determine the minimum base doping so that the punch- through voltage is no less than 25 V.

Electrical Engineering A uniformly doped silicon pnp bipolar transistor is to be designed with NĘ = 1019 cm³ and Nc = 1016 cm³. The metallurgical base width is 0.75 µm. Determine the minimum base doping so that the punch- through voltage is no less than 25 V.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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