Electrical Engineering A uniformly doped silicon pnp bipolar transistor is to be designed with NĘ = 1019 cm³ and Nc = 1016 cm³. The metallurgical base width is 0.75 µm. Determine the minimum base doping so that the punch- through voltage is no less than 25 V.

Question 4. Design a limiter circuit using only diodes and 10 K resistor to provide an output signal limited to +1.4 V.

Draw the energy band diagram of a p-n-p* bipolar junction transistor. Show all the relevant energies - conduction and valence band edges, Fermi energies, Intrinsic Fermi energy and built-in potentials. Identify which region is heavily doped. Draw very carefully and in a very tidy manner. No free hand diagrams