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The transistors in the output stage in Figure 8.34 are all matched. Their parameters are
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Microelectronics: Circuit Analysis and Design
- H. W. of Lecture L(7-2)C 1. Determine whether or not the transistor in figure above is saturated for the following values: Boc = 125, VBB = 1.5 v, Re = 6.8 kO, Rc = 150 Q and Vcc = 12 V. Rc1.0 kll R Vcc 10 V Bpc=50 10 ks2 VBB 3 V 2. What value of Rc in the figure above will it take to have a voltage gain of 50? Rc 1.0 kn RB Gut Vcc- V, 100 mVarrow_forward24. Set up a midpoint bias for a JFET with Ipss = 14 mA and VGs(ofm = -10 V. Use a 24 V dc source as the supply voltage. Show the circuit and resistor values. Indicate the values of Ip, VGs, and Vps-arrow_forward3. Write down which transistor structure each curve characteristic belongs to in the figure. Ip -VGS -VGS +VGs (c) VGS (b) (a)arrow_forward
- Given IDSS = 8mA and Vp= -4V. Sketch the drain and transconductance curve for VGS = +2V,+1V.arrow_forwardMeasurements taken with an E-MOSFET indicate that when VGS=+4V, ID=8mA, and when VGS=+6V, ID=32mA. Determine the value of k.arrow_forwardAnswwr for both circuit... Answer for both cktarrow_forward
- 04:- Design a bias circuit for NPN silicon transistor having a nominal B-100 to be used in voltage divider circuit with Q-point of Ic 10 mA and VCE = 10 V. Use standard valued 5% resistors and draw a schematic diagram of your design. (10 points)arrow_forward........ (Figure-1) R. RB= 380kN,Rc= 1kN B = 100, VBB = Vcc=12V RB ww Vec CC ......... I, V CE СЕ V ВЕ BB Q-1-b) Describe briefly the input / output characteristics and application of Common Emitter BJT Configurationarrow_forwardProblem5: For the common base circuit shown in figure find L and Vca. Assume transistor is Silicon.(a=0.98) IE Ic RE= 1.5 kQ Rc= 1.2 k VEE =8 V Vcc= 18 Varrow_forward
- The fixed bias circuit shown in figure uses a silicon transistor with VBE = 0.7V. 10 (a) Find the collector current, IC, and voltage VCE, if ß of transistor is 60. (b) Find IC and VCE if B changes to 80. What conclusions may be drawn? +Vcc (9V) 60k 0.5k + VCE VBEarrow_forwardQ2 Design a voltage divider bias circuit for an npn silicon transistor having B %D 100 to be used in a Common Emitter configuration. The quiescent point = 1 mA, VCE = 5 V. The supply voltage (Vcc) is 15 V. (Q point) is to be l. Assume VĘ = 0.1Vcc and BRĘ 2 10R2. (a)Find all the resistors values and draw the schematic diagram of this Common Emitter Amplifier with bypass capacitor CE.arrow_forwardUsing the re model circuit, determine the total voltage gain for the BJT circuit shown below. Show the details of your work. 22V ... 5.6k0 330k Vo + 10UF-POL B = 80 1200 10UF-POL To = 40 kN 2N2221 6.8k) Vs 4700 22UF-POLarrow_forward
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