Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Textbook Question
Chapter 7, Problem 8RQ
Sketch the expanded hybrid−
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Chapter 7 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 7 - (a) For the circuit shown in Figure 7.2, the...Ch. 7 - The circuit shown in Figure 7.10 has parameters of...Ch. 7 - For the equivalent circuit shown in Figure 7.13,...Ch. 7 - The equivalent circuit in Figure 7.14 has circuit...Ch. 7 - The parameters in the circuit shown in Figure 7.15...Ch. 7 - For the circuit shown in Figure 7.2 1(a), the...Ch. 7 - Consider the circuit shown in Figure 7.22(a). The...Ch. 7 - For the emitterfollower circuit shown in Figure...Ch. 7 - The circuit shown in Figure 7.27(a) has parameters...Ch. 7 - Consider the common-base circuit shown in Figure...
Ch. 7 - The commonemitter circuit shown in Figure 7.34...Ch. 7 - A bipolar transistor has parameters o=120 ,...Ch. 7 - Prob. 7.9EPCh. 7 - For the circuit in Figure 7.41(a), the parameters...Ch. 7 - A bipolar transistor is biased at ICQ=120A and its...Ch. 7 - For the transistor described in Example 7.9 and...Ch. 7 - The parameters of a bipolar transistor are: o=150...Ch. 7 - The parameters of an nchannel MOSFET are...Ch. 7 - For the circuit in Figure 7.55, the transistor...Ch. 7 - An nchannel MOSFET has parameters Kn=0.4mA/V2 ,...Ch. 7 - An nchannel MOSFET has a unitygain bandwidth of...Ch. 7 - For a MOSFET, assume that gm=1.2mA/V . The basic...Ch. 7 - The transistor in the circuit in Figure 7.60 has...Ch. 7 - Consider the commonbase circuit in Figure 7.64....Ch. 7 - The cascode circuit in Figure 7.65 has parameters...Ch. 7 - Prob. 7.12TYUCh. 7 - For the circuit in Figure 7.72, the transistor...Ch. 7 - Describe the general frequency response of an...Ch. 7 - Describe the general characteristics of the...Ch. 7 - Describe what is meant by a system transfer...Ch. 7 - What is the criterion that defines a corner, or...Ch. 7 - Describe what is meant by the phase of the...Ch. 7 - Describe the time constant technique for...Ch. 7 - Describe the general frequency response of a...Ch. 7 - Sketch the expanded hybrid model of the BJT.Ch. 7 - Prob. 9RQCh. 7 - Prob. 10RQCh. 7 - Prob. 11RQCh. 7 - Sketch the expanded smallsignal equivalent circuit...Ch. 7 - Define the cutoff frequency for a MOSFET.Ch. 7 - Prob. 14RQCh. 7 - Why is there not a Miller effect in a commonbase...Ch. 7 - Describe the configuration of a cascode amplifier.Ch. 7 - Why is the bandwidth of a cascode amplifier...Ch. 7 - Why is the bandwidth of the emitterfollower...Ch. 7 - Prob. 7.1PCh. 7 - Prob. 7.2PCh. 7 - Consider the circuit in Figure P7.3. (a) Derive...Ch. 7 - Consider the circuit in Figure P7.4 with a signal...Ch. 7 - Consider the circuit shown in Figure P7.5. (a)...Ch. 7 - A voltage transfer function is given by...Ch. 7 - Sketch the Bode magnitude plots for the following...Ch. 7 - (a) Determine the transfer function corresponding...Ch. 7 - Consider the circuit shown in Figure 7.15 with...Ch. 7 - For the circuit shown in Figure P7.12, the...Ch. 7 - The circuit shown in Figure 7.10 has parameters...Ch. 7 - The transistor shown in Figure P7.14 has...Ch. 7 - Consider the circuit shown in Figure P7.15. The...Ch. 7 - The transistor in the circuit shown in Figure...Ch. 7 - For the common-emitter circuit in Figure P7.17,...Ch. 7 - The transistor in the circuit in Figure P7.20 has...Ch. 7 - For the circuit in Figure P7.21, the transistor...Ch. 7 - (a) For the circuit shown in Figure P7.22, write...Ch. 7 - Consider the circuit shown in Figure P7.23. (a)...Ch. 7 - The parameters of the transistor in the circuit in...Ch. 7 - A capacitor is placed in parallel with RL in the...Ch. 7 - The parameters of the transistor in the circuit in...Ch. 7 - Prob. D7.27PCh. 7 - The circuit in Figure P7.28 is a simple output...Ch. 7 - Reconsider the circuit in Figure P728. The...Ch. 7 - Consider the circuit shown in Figure P7.32. The...Ch. 7 - The commonemitter circuit in Figure P7.35 has an...Ch. 7 - Consider the commonbase circuit in Figure 7.33 in...Ch. 7 - Prob. 7.39PCh. 7 - The parameters of the transistor in the circuit in...Ch. 7 - In the commonsource amplifier in Figure 7.25(a) in...Ch. 7 - A bipolar transistor has fT=4GHz , o=120 , and...Ch. 7 - A highfrequency bipolar transistor is biased at...Ch. 7 - (a) The frequency fT of a bipolar transistor is...Ch. 7 - The circuit in Figure P7.48 is a hybrid ...Ch. 7 - Consider the circuit in Figure P7.49. Calculate...Ch. 7 - A common-emitter equivalent circuit is shown in...Ch. 7 - For the common-emitter circuit in Figure 7.41(a)...Ch. 7 - For the commonemitter circuit in Figure P7.52,...Ch. 7 - Consider the circuit in Figure P7.52. The resistor...Ch. 7 - The parameters of the circuit shown in Figure...Ch. 7 - The parameters of an nchannel MOSFET are kn=80A/V2...Ch. 7 - Find fT for a MOSFET biased at IDQ=120A and...Ch. 7 - Fill in the missing parameter values in the...Ch. 7 - (a) An nchannel MOSFET has an electron mobility of...Ch. 7 - A commonsource equivalent circuit is shown in...Ch. 7 - Prob. 7.60PCh. 7 - The parameters of an ideal nchannel MOSFET are...Ch. 7 - Figure P7.62 shows the highfrequency equivalent...Ch. 7 - For the FET circuit in Figure P7.63, the...Ch. 7 - The midband voltage gain of a commonsource MOSFET...Ch. 7 - Prob. 7.65PCh. 7 - Prob. 7.67PCh. 7 - The bias voltages of the circuit shown in Figure...Ch. 7 - For the PMOS commonsource circuit shown in Figure...Ch. 7 - In the commonbase circuit shown in Figure P7.70,...Ch. 7 - Repeat Problem 7.70 for the commonbase circuit in...Ch. 7 - In the commongate circuit in Figure P7.72, the...
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- Vsis (~ Q3 (a) What is the advantage of using MOSFET as compared to BJT at the first stage of multi-stage amplifier? Rais 600 02 www Z₁ (b) Describe the function of the capacitor for the following condition: (1) (ii) SEEE/SKEE 1073 (c) The transistors parameters in Figure Q.3 are given as follow: BJT (iv) ↑ B-350, VBE 0.7 V, Ic=0.3 mA, VT 26 mV, and ro=00 E-MOSFETk 0.8 mA/V², VT- Vas(T) = 1 V C₁ HE a capacitor between stage 1 and stage 2 of a RC-coupled amplifier. bypass capacitor which is commonly used in small signal amplifier. (i) Draw the ac equivalent circuit at middle frequency for circuit in Figure Q.3 by using hybrid-x model. (ii) Determine the values of Z., Ziz and Zo. (iii) Calculate the gain, v/v, in decibel (dB). Draw and label the waveforms vo when v=2 sin 50t [mV] for one complete cycle. + Roi 50 ΚΩ Vi Ra 6 kn Ro 4.5 k Q₁ Rs 3 kQ C₂ не +15 V DS ↑ 22 R₁ 75 k R₂ 9 kn Figure Q.3 Multistage amplifier circuit Re RE 2kQ Rez 1kQ ← 2₂ -C₁ R₂ 20k2 %arrow_forwardFor the circuit given below Given Vsat=12V . I) Identify the stages II) Find the output voltagearrow_forwardIn order to express the effect of the internal capacitors of BJT and the high frequency reception, the current gain expression depending on the frequency (Figure b) (hfe) is used in the case of collector emitter short circuit, voltage source connected at base end and emitter grounded (Figure la).. The catalog information of the 2N2222 transistor is given in Figure Ic. In the catalogue, when Ic=20 mA, it is seen as fT=250 MHz. a) Find the total capacitor effect for the case where gm> > wCμ. (Cpi) + (Cμ) = ?pFarrow_forward
- Bipolar junction transistors (BJTs) are considered “normally-off” devices, because their natural state with no signal applied to the base is no ........... between emitter and collector, like an open switch. * Your answer All field-effect transistors are unipolar rather than bipolar devices. That is, the main current through them is comprised either of ........... through an N-type semiconductor *arrow_forward(a) What collector current is required for a bipolar transistor to achieve a transconductance of 40 mS? (b) Repeat for a transconductance of 200μS. (c) Repeat for a transconductance of 40 μS.arrow_forwardAnswer as soon as possible, I'll upvote. Attach C to B, forming a BJT. If the transistor is made forward-active, draw the new energy-band diagram.arrow_forward
- Consider the circuit depicted in the figure shown below. This circuit is designed using a silicon bipolar junction transistor (BJT) with a forward current gain BF = 100, and two resistances RB = 1kN and Rc = 1kN. The supply voltage is Vcc = 10 volts. The currents Ig and Ic designate the base and collector currents, respectively, whereas the voltage VCẸ denotes the voltage between collector and emitter. Vcc = 10 volts Rc =1 k2 Rg = 1 k2 VCE GND Throughout this question, you will use VBE,on = 0.7 volt and VCE,sat = 0.2 volt. Recall that VBE.on is the threshold voltage of the base-emitter junction, while VCE.sat represents the voltage that is measured between collector and emitter when the BJT is saturated. a) What is the value of the base current In? Please enter the value expressed in milliamperes (mA) in the box below. For instance, if you think that IR = 0.1 A, enter 100 in the box. If you think that Ip = 10 mA, enter 10 in the box. mas-numbas-Iti.ncl.ac.uk Submit part Unanswered b)…arrow_forwardFOLLOW UP QUESTIONS: BIPOLAR JUNCTION TRANSISTOR (BJT) SOLVE FOR: a.) VCE (off) CONSTRUCT A DC LINE SHOWING THE VALUES OF b.) IC (sat) c.) VCE (off) d.) ICQ e.) VCEQarrow_forwardCurrent and impedance levels of push-pull RF amplifier. Solid-state RF power amplifiers that provide more than 50 W or so must deal with very large currents, because the typical silicon RF BJT or PET cannot with-stand a DC collector voltage higher than about 40V. (Newer devices using materials such as silicon carbide can exceed this voltage limitation and provide greater power for the same current level.) Suppose a push-pull RF amplifier using a DC collector voltage of 36 V must provide a total peak RF output power of 200W. Typically, the AC "swing" (peak-to-peak AC excursion) of voltage at the collectors cannot exceed twice the DC power-supply voltage. (a) If each of the two devices in the push-pull amplifier delivers IOOW and has a peak-to-peak voltage of (2 x 36) = 72 V across its output terminals , what is the peak current I at the collector of each device, assuming . "d C(PK) smus01 al voltage and current? (b) At this current IC<PK >' how much series inductance L at a…arrow_forward
- In single transistor amplifier design, it is observed that the voltage gain will always decrease as the load resistance increases. True False The saturation region of MOSFET indicates that the drain current no longer depends on the source-drain voltage while the saturation region of BJT indicates that the collector current no longer depends on the collector-emitter voltage. True False A bipolar junction transistor can be connected to behave like a diode while a field effect transistor can not be connected to behave like a diode. True False A voltage follower circuit is usually designed to have the power gain slightly less than 1 with any passive load. True False A clipper circuit regulates DC voltage input while a clamp circuit regulates AC voltage input. True Falsearrow_forwardPlease help with this homework problem. The topic is Bipolar Junction Transistors (BJTs). I'm having a difficult time understanding how to replace the transistor with the small-signal equivalent.arrow_forwardFOLLOW UP QUESTIONS: BIPOLAR JUNCTION TRANSISTOR (BJT) SOLVE FOR a.) IC(sat) b.) VCE(off) CONSTRUCT A DC LOAD LINE SHOWING THE VALUES: c.) IC (sat) d.) VCE (off) e.) ICQ f.) VCEQarrow_forward
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How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License