For the common−emitter circuit in Figure P7.52, assume the emitter bypass capacitor
Figure P7.52
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Microelectronics: Circuit Analysis and Design
- The relation between Base Current IB, Emitter Current IE and Collector Current IC is Select one: a. IE = IB – IC | b. IB = IC + IE c. IE = IB + IC d. IC = IB + IE %3Darrow_forwardBipolar junction transistors (BJTs) are considered “normally-off” devices, because their natural state with no signal applied to the base is no ........... between emitter and collector, like an open switch. * Your answer All field-effect transistors are unipolar rather than bipolar devices. That is, the main current through them is comprised either of ........... through an N-type semiconductor *arrow_forwardCoonsider the common emitter amplifier shown in figure below. Assume a β of 100, VBE = 0.7V, VT = 25mA and VA = 100V. Draw an equivalent DC model and determine the rπ, transconductance (gm) and ro. Draw an equaivalent AC model using the small-signal model Find an expression for vbe and vo in terms of the input voltagearrow_forward
- If the frequency that is injected into an AM modulator is 100Mhz and it is combined with another injected signal of 10Khz, we can say that the combination is:arrow_forwardHow do we get the smal signal model and why CL and Cb doesn’t short the resistance because of the high frequency?arrow_forwardA) A Varactor tuned oscillator (VTO) circuit is generating 3.56MHZ, with a Varactor capacitance 20 pF and tuning voltage 7.5 V. Calculate the following: 22 1) The inductor value of VTO circuit. 2) Oscillating frequency of VTO at the Varactor maximum capacitance. ks)arrow_forward
- This problem is AC analysis problem. DC analysis is not needed to answer the question. A) If we assume that the peak voltage of Vbe must be less than 10 mV to avoid small signal violations determine the value of Rsig if Vi has a peak amplitude of 1 V and Is = 1mA. Hint: Don't forget r!! Answer: Rsig =. B) If you did the DC analysis on this problem and calculated Vc = 50 mV and Vs = -100 mV what is the maximum amplitude of the output voltage while the circuit stays in active mode. Answer: Vo,max =, When you "verify" a mode of operation you will need to calculate all three voltages (Vc, Ve, VE for BJTS and VG, Vs, Vp for MOSFETS) and show the correct two conditions are satisfied. Assume Capacitors acts like open circuits at DC and short circuits for AC. > Assume the following: 5V o Beta = 100 O VBE = 0.7 o V: (Thermal) = 26 mV o Vr (Threshold) = 2V O VA = - o For MOSFET saturation mode: assume: lp = K(VGs-Vr)? (Assume K = 10 mA/V²). 5kn C2 01 C1 Rsig 1kn 10k Vi IIs :C3 1mA -5Varrow_forwardIn order to express the effect of the internal capacitors of BJT and the high frequency reception, the current gain expression depending on the frequency (Figure b) (hfe) is used in the case of collector emitter short circuit, voltage source connected at base end and emitter grounded (Figure la).. The catalog information of the 2N2222 transistor is given in Figure Ic. In the catalogue, when Ic=20 mA, it is seen as fT=250 MHz. a) Find the total capacitor effect for the case where gm> > wCμ. (Cpi) + (Cμ) = ?pFarrow_forward2. For the SSBSC modulator shown below: (A=5, B=0.2, C=0.01) a) identify the method of single sideband suppression b) determine the equation of the signal at the output of BM1, BM2, adder c) calculate the effective current of the signal at the output of the adder if the load resistance is 75 ohms e=50sin 600πt BM1 +90 PS Oscr.,ec e=10sin 10000лt + 90 PS BM2arrow_forward
- (a) Design the circuit shown in Figure P7.18 such that Ipo = 0.8 mA, VDsQ = 3.2 V, Rin K, = 0.5 mA/V², VTN = 1.2 V, and A = 0. (b) What is the midband volt- age gain? (c) Determine the magnitude of the voltage gain at (i) f = 5 Hz, (ii) f = 14 Hz, and (iii) f = 25 Hz. (d) Sketch the Bode plot of the voltage gain magnitude and phase. 160 k2, and fr 16 Hz. The transistor parameters are ass VDD =9 V Rp R1 Rin 1 O vO Cc Rs = 0.5 k2 R2 Figure P7.18 ww wwarrow_forward7.33 Figure P7.33 shows a discrete-circuit amplifier. The input signal vig is coupled to the gate through a very large capacitor (shown as infinite). The transistor source is connected to ground at signal frequencies via a very large capacitor (shown as infinite). The output voltage signal that develops at the drain is coupled to a load resistance via a very large capacitor (shown as infinite). All capacitors behave as short circuits for signals and as open circuits for de. (a) If the transistor has V, = 1 V, and k, = 4 mA/V', verify that the bias circuit establishes Ves = 1.5 V, I, =0.5 mA, and V, = +7.0 v. That is, assume these values, and %3D verify that they are consistent with the values of the circuit components and the device parameters. (b) Find g„, and r, if V, = 100 V. (c) Draw a complete small-signal equivalent circuit for the amplifier, assuming all capacitors behave as short circuits at signal frequencies. (d) Find R, V/vig, v,/Vg» and v,/vig- +15 V 10 MN 16 k2 Rie = 200…arrow_forward2) For a PM modulator with sensitivity K=2.5 rad/V and modulating signal vm(t) = 4sin(212000t), (a) determine the peak phase deviation. (b) How much phase deviation is produced for a modulating signal with twice the amplitude?arrow_forward
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