For the common−emitter circuit in Figure P7.52, assume the emitter bypass capacitor
Figure P7.52
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Microelectronics: Circuit Analysis and Design
- Draw the small signal model of common-source amplifier with diode-connected load and derive the expression for voltage gain (λ ≠ 0), clearly showing all steps of derivation.arrow_forwardI need the answer at 15 minutearrow_forwardMost of the following statements about integrated circuits arecorrect, but one is not. Which statement is NOT true? Select one: a. Transistors are constructed in a small area of an integrated circuit,and are connected to other transistors by wires that are embedded inthe integrated circuit b. Wires that carry signals may be embedded in a substrate without a shortcircuit because a short circuit would require a signal to cross areverse biased junction c. Each transistor on an integrated circuit is manufactured individually,one at a time d. An integrated circuit contains several layersarrow_forward
- A baseband signal has the spectrum sketched in the first image added below. The baseband signal modulates a 98 kHz carrier sine wave. Using frequency and amplitude labelling similar to that in Figure 2, sketch the spectrum of the modulated signal using a template added in image 2, for the following modulations: i-AM with the amplitude of the carrier wave being 20 V ii-DSBSC iii-SSB – the lower sideband iv-SSB – the upper sidebandarrow_forwardIn order to express the effect of the internal capacitors of BJT and the high frequency reception, the current gain expression depending on the frequency (Figure b) (hfe) is used in the case of collector emitter short circuit, voltage source connected at base end and emitter grounded (Figure la).. The catalog information of the 2N2222 transistor is given in Figure Ic. In the catalogue, when Ic=20 mA, it is seen as fT=250 MHz. a) Find the total capacitor effect for the case where gm> > wCμ. (Cpi) + (Cμ) = ?pFarrow_forwardThis problem is AC analysis problem. DC analysis is not needed to answer the question. A) If we assume that the peak voltage of Vbe must be less than 10 mV to avoid small signal violations determine the value of Rsig if Vi has a peak amplitude of 1 V and Is = 1mA. Hint: Don't forget r!! Answer: Rsig =. B) If you did the DC analysis on this problem and calculated Vc = 50 mV and Vs = -100 mV what is the maximum amplitude of the output voltage while the circuit stays in active mode. Answer: Vo,max =, When you "verify" a mode of operation you will need to calculate all three voltages (Vc, Ve, VE for BJTS and VG, Vs, Vp for MOSFETS) and show the correct two conditions are satisfied. Assume Capacitors acts like open circuits at DC and short circuits for AC. > Assume the following: 5V o Beta = 100 O VBE = 0.7 o V: (Thermal) = 26 mV o Vr (Threshold) = 2V O VA = - o For MOSFET saturation mode: assume: lp = K(VGs-Vr)? (Assume K = 10 mA/V²). 5kn C2 01 C1 Rsig 1kn 10k Vi IIs :C3 1mA -5Varrow_forward
- 2. For the SSBSC modulator shown below: (A=5, B=0.2, C=0.01) a) identify the method of single sideband suppression b) determine the equation of the signal at the output of BM1, BM2, adder c) calculate the effective current of the signal at the output of the adder if the load resistance is 75 ohms e=50sin 600πt BM1 +90 PS Oscr.,ec e=10sin 10000лt + 90 PS BM2arrow_forward(a) Design the circuit shown in Figure P7.18 such that Ipo = 0.8 mA, VDsQ = 3.2 V, Rin K, = 0.5 mA/V², VTN = 1.2 V, and A = 0. (b) What is the midband volt- age gain? (c) Determine the magnitude of the voltage gain at (i) f = 5 Hz, (ii) f = 14 Hz, and (iii) f = 25 Hz. (d) Sketch the Bode plot of the voltage gain magnitude and phase. 160 k2, and fr 16 Hz. The transistor parameters are ass VDD =9 V Rp R1 Rin 1 O vO Cc Rs = 0.5 k2 R2 Figure P7.18 ww wwarrow_forward3. State the conditions of the emitter-base and the collector-base junctions when the BJT operates in the cut-off, saturation and active modes. 4. Explain why in the ac analysis at middle frequency range, all external capacitors are assumed to be a short-circuit.arrow_forward
- 7.33 Figure P7.33 shows a discrete-circuit amplifier. The input signal vig is coupled to the gate through a very large capacitor (shown as infinite). The transistor source is connected to ground at signal frequencies via a very large capacitor (shown as infinite). The output voltage signal that develops at the drain is coupled to a load resistance via a very large capacitor (shown as infinite). All capacitors behave as short circuits for signals and as open circuits for de. (a) If the transistor has V, = 1 V, and k, = 4 mA/V', verify that the bias circuit establishes Ves = 1.5 V, I, =0.5 mA, and V, = +7.0 v. That is, assume these values, and %3D verify that they are consistent with the values of the circuit components and the device parameters. (b) Find g„, and r, if V, = 100 V. (c) Draw a complete small-signal equivalent circuit for the amplifier, assuming all capacitors behave as short circuits at signal frequencies. (d) Find R, V/vig, v,/Vg» and v,/vig- +15 V 10 MN 16 k2 Rie = 200…arrow_forward2) For a PM modulator with sensitivity K=2.5 rad/V and modulating signal vm(t) = 4sin(212000t), (a) determine the peak phase deviation. (b) How much phase deviation is produced for a modulating signal with twice the amplitude?arrow_forwardURGENTarrow_forward
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