(a) What collector current is required for a bipolar transistor to achieve a transconductance of 40 mS? (b) Repeat for a transconductance of 200μS. (c) Repeat for a transconductance of 40 μS.

2. The parameters of the transistor as shown in the figure below are ß = 100 and VA = 100V. a. Find the dc voltages at the base and emitter terminals. b. Find Rc such that VCEQ = 3.5V. c. Assuming Cc and CE act as short circuits, determine the small-signal voltage gain Av = Vo/Vs. d. Repeat part (c) if a 5000 source resistor is in series with the vs signal source. V+ = +5 V Rs = 100 £2 www Us Cc RB = 10 ΚΩ I= Iausmi 0.35 mA www RC -000 V=-5 V CE

Design a voltage divider biased CE stage with emitter degeneration. That stage should support a voltage gain of 5 and an input impedance larger than 3 KOhms with a bias current of 0.5 mA. Assume Beta=100, Is = 5e-17. Neglect the early voltage effect. You also need to provide values for the operating point of this transistor. Find the output resistance of this stage if the early voltage = 20 V.

2. Determine the operating point for a fixed-biased transistor with the following values: BDC = 90, Vcc=12 V, RB=22 KO, and Rc=100. Show the circuit too.