Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Textbook Question
Chapter 7, Problem 7.14P
The transistor shown in Figure P7.14 has parameters
Figure P7.14
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In the self-bias circuit of Figure 7.80
a. Draw the transfer characteristic curve of the device.
b. Draw additional circuit equations on the same graph.
Find c.lDQ and VGSQ.
d. Calculate VDS , VD, VG, Vs.
...
(a) Design the circuit shown in Figure P7.18 such that Ipo = 0.8 mA,
VDsQ = 3.2 V, Rin
K, = 0.5 mA/V², VTN = 1.2 V, and A = 0. (b) What is the midband volt-
age gain? (c) Determine the magnitude of the voltage gain at (i) f = 5 Hz,
(ii) f = 14 Hz, and (iii) f = 25 Hz. (d) Sketch the Bode plot of the voltage
gain magnitude and phase.
160 k2, and fr
16 Hz. The transistor parameters are
ass
VDD =9 V
Rp
R1
Rin 1
O vO
Cc
Rs =
0.5 k2
R2
Figure P7.18
ww
ww
Q2.
Consider the circuit shown in Figure P7.15. The transistor has parameters
B = 120 and VA
collector-emitter voltage is VCEO = 1.25 V. (a) Determine Rc, (b) find Ico,
and (c) determine the maximum gain.
= ∞. The circuit bandwidth is 800 MHz and the quiescent
Vcc= 2.5 V
RC
CL = 0.08 pF
Figure P7.15
Chapter 7 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 7 - (a) For the circuit shown in Figure 7.2, the...Ch. 7 - The circuit shown in Figure 7.10 has parameters of...Ch. 7 - For the equivalent circuit shown in Figure 7.13,...Ch. 7 - The equivalent circuit in Figure 7.14 has circuit...Ch. 7 - The parameters in the circuit shown in Figure 7.15...Ch. 7 - For the circuit shown in Figure 7.2 1(a), the...Ch. 7 - Consider the circuit shown in Figure 7.22(a). The...Ch. 7 - For the emitterfollower circuit shown in Figure...Ch. 7 - The circuit shown in Figure 7.27(a) has parameters...Ch. 7 - Consider the common-base circuit shown in Figure...
Ch. 7 - The commonemitter circuit shown in Figure 7.34...Ch. 7 - A bipolar transistor has parameters o=120 ,...Ch. 7 - Prob. 7.9EPCh. 7 - For the circuit in Figure 7.41(a), the parameters...Ch. 7 - A bipolar transistor is biased at ICQ=120A and its...Ch. 7 - For the transistor described in Example 7.9 and...Ch. 7 - The parameters of a bipolar transistor are: o=150...Ch. 7 - The parameters of an nchannel MOSFET are...Ch. 7 - For the circuit in Figure 7.55, the transistor...Ch. 7 - An nchannel MOSFET has parameters Kn=0.4mA/V2 ,...Ch. 7 - An nchannel MOSFET has a unitygain bandwidth of...Ch. 7 - For a MOSFET, assume that gm=1.2mA/V . The basic...Ch. 7 - The transistor in the circuit in Figure 7.60 has...Ch. 7 - Consider the commonbase circuit in Figure 7.64....Ch. 7 - The cascode circuit in Figure 7.65 has parameters...Ch. 7 - Prob. 7.12TYUCh. 7 - For the circuit in Figure 7.72, the transistor...Ch. 7 - Describe the general frequency response of an...Ch. 7 - Describe the general characteristics of the...Ch. 7 - Describe what is meant by a system transfer...Ch. 7 - What is the criterion that defines a corner, or...Ch. 7 - Describe what is meant by the phase of the...Ch. 7 - Describe the time constant technique for...Ch. 7 - Describe the general frequency response of a...Ch. 7 - Sketch the expanded hybrid model of the BJT.Ch. 7 - Prob. 9RQCh. 7 - Prob. 10RQCh. 7 - Prob. 11RQCh. 7 - Sketch the expanded smallsignal equivalent circuit...Ch. 7 - Define the cutoff frequency for a MOSFET.Ch. 7 - Prob. 14RQCh. 7 - Why is there not a Miller effect in a commonbase...Ch. 7 - Describe the configuration of a cascode amplifier.Ch. 7 - Why is the bandwidth of a cascode amplifier...Ch. 7 - Why is the bandwidth of the emitterfollower...Ch. 7 - Prob. 7.1PCh. 7 - Prob. 7.2PCh. 7 - Consider the circuit in Figure P7.3. (a) Derive...Ch. 7 - Consider the circuit in Figure P7.4 with a signal...Ch. 7 - Consider the circuit shown in Figure P7.5. (a)...Ch. 7 - A voltage transfer function is given by...Ch. 7 - Sketch the Bode magnitude plots for the following...Ch. 7 - (a) Determine the transfer function corresponding...Ch. 7 - Consider the circuit shown in Figure 7.15 with...Ch. 7 - For the circuit shown in Figure P7.12, the...Ch. 7 - The circuit shown in Figure 7.10 has parameters...Ch. 7 - The transistor shown in Figure P7.14 has...Ch. 7 - Consider the circuit shown in Figure P7.15. The...Ch. 7 - The transistor in the circuit shown in Figure...Ch. 7 - For the common-emitter circuit in Figure P7.17,...Ch. 7 - The transistor in the circuit in Figure P7.20 has...Ch. 7 - For the circuit in Figure P7.21, the transistor...Ch. 7 - (a) For the circuit shown in Figure P7.22, write...Ch. 7 - Consider the circuit shown in Figure P7.23. (a)...Ch. 7 - The parameters of the transistor in the circuit in...Ch. 7 - A capacitor is placed in parallel with RL in the...Ch. 7 - The parameters of the transistor in the circuit in...Ch. 7 - Prob. D7.27PCh. 7 - The circuit in Figure P7.28 is a simple output...Ch. 7 - Reconsider the circuit in Figure P728. The...Ch. 7 - Consider the circuit shown in Figure P7.32. The...Ch. 7 - The commonemitter circuit in Figure P7.35 has an...Ch. 7 - Consider the commonbase circuit in Figure 7.33 in...Ch. 7 - Prob. 7.39PCh. 7 - The parameters of the transistor in the circuit in...Ch. 7 - In the commonsource amplifier in Figure 7.25(a) in...Ch. 7 - A bipolar transistor has fT=4GHz , o=120 , and...Ch. 7 - A highfrequency bipolar transistor is biased at...Ch. 7 - (a) The frequency fT of a bipolar transistor is...Ch. 7 - The circuit in Figure P7.48 is a hybrid ...Ch. 7 - Consider the circuit in Figure P7.49. Calculate...Ch. 7 - A common-emitter equivalent circuit is shown in...Ch. 7 - For the common-emitter circuit in Figure 7.41(a)...Ch. 7 - For the commonemitter circuit in Figure P7.52,...Ch. 7 - Consider the circuit in Figure P7.52. The resistor...Ch. 7 - The parameters of the circuit shown in Figure...Ch. 7 - The parameters of an nchannel MOSFET are kn=80A/V2...Ch. 7 - Find fT for a MOSFET biased at IDQ=120A and...Ch. 7 - Fill in the missing parameter values in the...Ch. 7 - (a) An nchannel MOSFET has an electron mobility of...Ch. 7 - A commonsource equivalent circuit is shown in...Ch. 7 - Prob. 7.60PCh. 7 - The parameters of an ideal nchannel MOSFET are...Ch. 7 - Figure P7.62 shows the highfrequency equivalent...Ch. 7 - For the FET circuit in Figure P7.63, the...Ch. 7 - The midband voltage gain of a commonsource MOSFET...Ch. 7 - Prob. 7.65PCh. 7 - Prob. 7.67PCh. 7 - The bias voltages of the circuit shown in Figure...Ch. 7 - For the PMOS commonsource circuit shown in Figure...Ch. 7 - In the commonbase circuit shown in Figure P7.70,...Ch. 7 - Repeat Problem 7.70 for the commonbase circuit in...Ch. 7 - In the commongate circuit in Figure P7.72, the...
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- 7.26. The sampling theorem, as we have derived it, states that a signal x(1) must be sam- pled at a rate greater than its bandwidth (or equivalently, a rate greater than twice its highest frequency). This implies that if x(1) has a spectrum as indicated in Figure P7.26(a) then x(1) must be sampled at a rate greater than 2002. However, since the signal has most of its energy concentrated in a narrow band, it would seem reason- able to expect that a sampling rate lower than twice the highest frequency could be used. A signal whose energy is concentrated in a frequency band is often referred to as a bandpass signal. There are a variety of techniques for sampling such signals, generally referred to as bandpass-sampling techniques. x(t) X(jw) MA @₁ W₂ (a) -W₂ -W₁ p(t) = Σ 8(t-nT) Io. Xp (t) H(jw) 1 -Wo n Wa p(t) H(jw) A+ (b) 3° W wp w x, (t) Figure P7.26arrow_forward1. For the JFET in Figure 7.25, VGs(of) -2 to -5 V and Ipss 5 to 10 mA. %3D (a) Using these values, plot the maximum transconductance curve, minimum transconductance curve, DC bias line and the range of Q-point values. (b) Determine the values of VGs and Ip at the minimum Q-point. +VDD 9+20 V R = 2 MQ Rp = 25 kQ 1 R2 = 3 MQ Rs = 10 k WHarrow_forwardA modulating signal f(t) has a maximum frequency of 18 kHz and peak value of 3volt, this signal is encoded using PCM. 1- Calculate the number of bits per sample if the number of levels is 130 2- Calculate the SNRQ if the average power of f(t) is 45 watt. 3- Calculate the minimum system bandwidth. e 7:20arrow_forward
- EXERCISE PROBLEM *Ex 7.13: The transistor in the circuit in Figure 7.60 has parameters B= 125, VBE(on) = 0.7 V, VA = 200 V, C = 24 pF, and C= 3 pF. (a) Calculate the Miller capacitance. (b) Determine the upper 3 dB frequency. (c) Determine the small-signal midband voltage gain. (Ans. (a) CM = 155 pF, (b) fH = 1.21 MHz, (c) A] = 37.3)arrow_forwardQ7. For the PMOS common-source circuit shown in Figure P7.69, the transistor parameters are: VTp = -2 V, K, Cgd = 3 pF. (a) Determine the upper 3 dB frequency. (b) What is the equiv- alent Miller capacitance? State any assumptions or approximations that you make. (c) Find the midband voltage gain. 1 mA/V², 1 = 0, Cgs = 15 pF, and +10 V Rs 0.5 kQ R=8 k2 Ci = 2 µF =Cs=10 µF wwHH R;=0.5 k2 Ce2 2 uF R3 = 22 k23 Rp=D 2 k2 RL= 5 k2 -10 V Figure P7.69 19 WW-arrow_forwardThis problem is AC analysis problem. DC analysis is not needed to answer the question. A) If we assume that the peak voltage of Vbe must be less than 10 mV to avoid small signal violations determine the value of Rsig if Vi has a peak amplitude of 1 V and Is = 1mA. Hint: Don't forget r!! Answer: Rsig =. B) If you did the DC analysis on this problem and calculated Vc = 50 mV and Vs = -100 mV what is the maximum amplitude of the output voltage while the circuit stays in active mode. Answer: Vo,max =, When you "verify" a mode of operation you will need to calculate all three voltages (Vc, Ve, VE for BJTS and VG, Vs, Vp for MOSFETS) and show the correct two conditions are satisfied. Assume Capacitors acts like open circuits at DC and short circuits for AC. > Assume the following: 5V o Beta = 100 O VBE = 0.7 o V: (Thermal) = 26 mV o Vr (Threshold) = 2V O VA = - o For MOSFET saturation mode: assume: lp = K(VGs-Vr)? (Assume K = 10 mA/V²). 5kn C2 01 C1 Rsig 1kn 10k Vi IIs :C3 1mA -5Varrow_forward
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- 7.65 In the circuit in Figure P7.65, the transistor parameters are: B 120, Ver(on)=0.7 V, VA 100 V, C -I pF, and fr mine C, and the equivalent Miller capacitance Cy. State any approxima- tions or assumptions that you make. (b) Find the upper 3 dB frequency and the midband voltage gain. -600 MHz. (a) Deter- +5 V R= 33 ka wwHH Ry=22 k2 4 k2 10 wwarrow_forwardExample 7 For the circuit shown, use R1=R2=47k2, RE=5.7k 22, RC=3.3k , RL=10k 2 and Vcc=12V, VBE=0.7V, B=100, IB=8.48uA 1-Draw the DC equivalent circuit. 2-Find the required parameter for the AC small signal model. 3-Draw the small signal model 4-Calculate the voltage gain. 5-Find the input impedance. 6-Find the output impedance. IB=8.84uA, IC=0.884mA, gm-35.36mA/V r=2.828KM. Usig Rin Gain=- 87.74, Rin=2.524k , Rout=3.3k Vcc R₁ R₂ Rc RE RL ww V Voarrow_forward7.65 In the circuit in Figure P7.65, the transistor parameters are: B = 120, VBE(on) = 0.7 V, VA = 100 V, C, = 1 pF, and fr = 600 MHz. (a) Deter- mine C, and the equivalent Miller capacitance CM. State any approxima- tions or assumptions that you make. (b) Find the upper 3 dB frequency and the midband voltage gain. Rc=D4 k2 R = 33 k2 C =1 uF Cc2 = 2 µF Rg = 2 k2 R = 5 ka R2 = 22 k2 Rg%3D 4 k2 Cg = 10 uF Figure P7.65 wwarrow_forward
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