Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Textbook Question
Chapter 7, Problem 7.58P
(a) An n−channel MOSFET has an electron mobility of
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Chapter 7 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 7 - (a) For the circuit shown in Figure 7.2, the...Ch. 7 - The circuit shown in Figure 7.10 has parameters of...Ch. 7 - For the equivalent circuit shown in Figure 7.13,...Ch. 7 - The equivalent circuit in Figure 7.14 has circuit...Ch. 7 - The parameters in the circuit shown in Figure 7.15...Ch. 7 - For the circuit shown in Figure 7.2 1(a), the...Ch. 7 - Consider the circuit shown in Figure 7.22(a). The...Ch. 7 - For the emitterfollower circuit shown in Figure...Ch. 7 - The circuit shown in Figure 7.27(a) has parameters...Ch. 7 - Consider the common-base circuit shown in Figure...
Ch. 7 - The commonemitter circuit shown in Figure 7.34...Ch. 7 - A bipolar transistor has parameters o=120 ,...Ch. 7 - Prob. 7.9EPCh. 7 - For the circuit in Figure 7.41(a), the parameters...Ch. 7 - A bipolar transistor is biased at ICQ=120A and its...Ch. 7 - For the transistor described in Example 7.9 and...Ch. 7 - The parameters of a bipolar transistor are: o=150...Ch. 7 - The parameters of an nchannel MOSFET are...Ch. 7 - For the circuit in Figure 7.55, the transistor...Ch. 7 - An nchannel MOSFET has parameters Kn=0.4mA/V2 ,...Ch. 7 - An nchannel MOSFET has a unitygain bandwidth of...Ch. 7 - For a MOSFET, assume that gm=1.2mA/V . The basic...Ch. 7 - The transistor in the circuit in Figure 7.60 has...Ch. 7 - Consider the commonbase circuit in Figure 7.64....Ch. 7 - The cascode circuit in Figure 7.65 has parameters...Ch. 7 - Prob. 7.12TYUCh. 7 - For the circuit in Figure 7.72, the transistor...Ch. 7 - Describe the general frequency response of an...Ch. 7 - Describe the general characteristics of the...Ch. 7 - Describe what is meant by a system transfer...Ch. 7 - What is the criterion that defines a corner, or...Ch. 7 - Describe what is meant by the phase of the...Ch. 7 - Describe the time constant technique for...Ch. 7 - Describe the general frequency response of a...Ch. 7 - Sketch the expanded hybrid model of the BJT.Ch. 7 - Prob. 9RQCh. 7 - Prob. 10RQCh. 7 - Prob. 11RQCh. 7 - Sketch the expanded smallsignal equivalent circuit...Ch. 7 - Define the cutoff frequency for a MOSFET.Ch. 7 - Prob. 14RQCh. 7 - Why is there not a Miller effect in a commonbase...Ch. 7 - Describe the configuration of a cascode amplifier.Ch. 7 - Why is the bandwidth of a cascode amplifier...Ch. 7 - Why is the bandwidth of the emitterfollower...Ch. 7 - Prob. 7.1PCh. 7 - Prob. 7.2PCh. 7 - Consider the circuit in Figure P7.3. (a) Derive...Ch. 7 - Consider the circuit in Figure P7.4 with a signal...Ch. 7 - Consider the circuit shown in Figure P7.5. (a)...Ch. 7 - A voltage transfer function is given by...Ch. 7 - Sketch the Bode magnitude plots for the following...Ch. 7 - (a) Determine the transfer function corresponding...Ch. 7 - Consider the circuit shown in Figure 7.15 with...Ch. 7 - For the circuit shown in Figure P7.12, the...Ch. 7 - The circuit shown in Figure 7.10 has parameters...Ch. 7 - The transistor shown in Figure P7.14 has...Ch. 7 - Consider the circuit shown in Figure P7.15. The...Ch. 7 - The transistor in the circuit shown in Figure...Ch. 7 - For the common-emitter circuit in Figure P7.17,...Ch. 7 - The transistor in the circuit in Figure P7.20 has...Ch. 7 - For the circuit in Figure P7.21, the transistor...Ch. 7 - (a) For the circuit shown in Figure P7.22, write...Ch. 7 - Consider the circuit shown in Figure P7.23. (a)...Ch. 7 - The parameters of the transistor in the circuit in...Ch. 7 - A capacitor is placed in parallel with RL in the...Ch. 7 - The parameters of the transistor in the circuit in...Ch. 7 - Prob. D7.27PCh. 7 - The circuit in Figure P7.28 is a simple output...Ch. 7 - Reconsider the circuit in Figure P728. The...Ch. 7 - Consider the circuit shown in Figure P7.32. The...Ch. 7 - The commonemitter circuit in Figure P7.35 has an...Ch. 7 - Consider the commonbase circuit in Figure 7.33 in...Ch. 7 - Prob. 7.39PCh. 7 - The parameters of the transistor in the circuit in...Ch. 7 - In the commonsource amplifier in Figure 7.25(a) in...Ch. 7 - A bipolar transistor has fT=4GHz , o=120 , and...Ch. 7 - A highfrequency bipolar transistor is biased at...Ch. 7 - (a) The frequency fT of a bipolar transistor is...Ch. 7 - The circuit in Figure P7.48 is a hybrid ...Ch. 7 - Consider the circuit in Figure P7.49. Calculate...Ch. 7 - A common-emitter equivalent circuit is shown in...Ch. 7 - For the common-emitter circuit in Figure 7.41(a)...Ch. 7 - For the commonemitter circuit in Figure P7.52,...Ch. 7 - Consider the circuit in Figure P7.52. The resistor...Ch. 7 - The parameters of the circuit shown in Figure...Ch. 7 - The parameters of an nchannel MOSFET are kn=80A/V2...Ch. 7 - Find fT for a MOSFET biased at IDQ=120A and...Ch. 7 - Fill in the missing parameter values in the...Ch. 7 - (a) An nchannel MOSFET has an electron mobility of...Ch. 7 - A commonsource equivalent circuit is shown in...Ch. 7 - Prob. 7.60PCh. 7 - The parameters of an ideal nchannel MOSFET are...Ch. 7 - Figure P7.62 shows the highfrequency equivalent...Ch. 7 - For the FET circuit in Figure P7.63, the...Ch. 7 - The midband voltage gain of a commonsource MOSFET...Ch. 7 - Prob. 7.65PCh. 7 - Prob. 7.67PCh. 7 - The bias voltages of the circuit shown in Figure...Ch. 7 - For the PMOS commonsource circuit shown in Figure...Ch. 7 - In the commonbase circuit shown in Figure P7.70,...Ch. 7 - Repeat Problem 7.70 for the commonbase circuit in...Ch. 7 - In the commongate circuit in Figure P7.72, the...
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- a) (i) Draw the electrical model of a piezoelectric crystal. (ii) Over what portionof the reactance curve do we desire oscillations to take place when the crystal isused as part of a sinusoidal oscillator? Explain. b) An N-channel JFET has IDSS = 16 mA and VP= -6 volts. Calculate the draincurrent and VDS (sat) when VGS = -4 volts.arrow_forwardIf the reverse bias on the gate of a JFET is increased, then width of the conducting channel . Select one: a. is decreased b. is increased c. remains the same d. none of the abovearrow_forward" A 2N5459 has VGS(off) = -8 v and IDSS = %3D 16mA. What is the drain current at the half cutoff point?arrow_forward
- For a HWR circuit using silicon diode, with a load resistance of 2k ohms. If the 50Hz sinusoidal wave input peak is 250volts, then the peak inverse voltage is a. 70.7v b. 500v c. 250v d. 141.4varrow_forwardSolve for Collector Resistance (RC)arrow_forwardA JFET has a 5 V. when Vas =0, what is Vos at the Point where the drain current become Constant ? sPecified Pinch - off Voltage of %3Darrow_forward
- An abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 1 X -3 10¹7 cm-³ and N₂ = 5 X 10¹6 cm-³ at T = a 300 K. Calculate the Fermi level on each side of the junction with respect to the intrinsic Fermi level and add the two values together to get Vbi. Vbi = 0.856 V O Vbi Vbi = 0.814 V Vbi = 0.796 V Vbi = 0.773 V o Vbiarrow_forwardA single-phase full-wave transistor rectifier feeds power to motor load. The source voltage is 230V, 50 Hz, eload R = 22, L = 10mH and E = 100V. For a firing angle of %3D %3D 30, the average value of output current in case conduction is stopped at 170° is (a) 2.8 A (c) 5.69 A (b) 28.46 A (d) 56.92 Aarrow_forwardWhy was the smoothing capacitor C1/47 not placed directly after the unit bridge? It was placed in its place in the circuit, where its work as a smoothing filter for the base voltage of transistor Q1 was deliberately stopped, but it works with the rest of the circuit elements. Capacitor C1 is isolated between transistor Q1 and the rest of the circuit by a diode (1N4001).arrow_forward
- When a silicon p-n junction is reverse-biased to 30 V, the depletion-layer capacitance is 1.75 nF/cm². If the maximum electric field at avalanche breakdown is 3.1x 105 V/cm, what is the breakdown voltage?arrow_forwardQ.3 The input, Vs and the output, Vo of a diode circuit (assuming ideal diode) are shown 3 SEEU/SKEU 1063 in Figure A.2. Name an application that can produce output as in Figure A.2 (ii) and draw the circuit. S UTM S UTM UTM UTM S UTM S UTM O UTM 8 UTM UTM S UTM S UTM UTM UTM S UTM UTM MB UTM ot UTM UT S UTM B UTM UTM 8UTM (i) aUTM UT 8 UTM UTM UTM M UTM TM S UTM UTM UT MS UTM or (i) UTM Figure A.2 8 UTM UT TM S UTMarrow_forwardQuestion 1: In the circuit shown below, the output (Vo = 10V Max.) Unipolar. The frequency of Primary is 60 Hz. The diodes are Silicon with VD = 0.7V. a. Sketch the output without a Capacitor. b. Determine Voc without a Capacitor. c. Sketch Vs (at the Secondary). d. Determine Voc with a Capacitor of 10 uF across RL. e. Determine the RMS Value of Vp (at the Primary). f. PIV (Peak Inverse Voltage). 10:1 Output C. 22 k1 All diodes are IN4001. | 00000arrow_forward
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