Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
expand_more
expand_more
format_list_bulleted
Videos
Question
Chapter 16, Problem 16.21P
(a)
To determine
The value of the width to length ratio
(b)
To determine
The value of the output voltage
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
There are three different main semiconductor devices of FETs which are JFET, D-MOSFET, and E-MOSFET. All of them are also known as active semiconductor devices.
i) Briefly explain the different between JFET and D-MOSFET.
ii) Given that Vp = - 6 V and IDSS = 10 mA. Draw the transfer characteristics of n-channel JFET using shorthand method.
iii) State the general relationship of JFET, D-MOSFET, and E-MOSFET.
Vcc=15V
Q1: BC237
Rc
3.6kQ
or BC238
B=200
VBE(on)=0.7V
R1
110KQ
Rs
Cci
1000 4.7µF
Cco
4.7µF
R2
·27kΩ
RE
1.2kQ
RL
12kΩ
Vs
Rin
Rout
Figure 1. Common-emitter amplifier.
2)
In the circuit given in the figure | VBE | Since = 0.7V, R1 = 2.66Kohm, R2 = 11.73Kohm, RC = 0.79Kohm, RE = 2.36Kohm, VCC = 14.00V, Beta = 115.00, calculate the IC current by full analysis. When making your transactions, 2 steps will be taken after the point. Select the closest option according to +/- 10% margin of error. There is only one correct answer to the question.
Chapter 16 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 16 - Consider the NMOS inverter with resistor load in...Ch. 16 - The enhancementload NMOS inverter in Figure...Ch. 16 - Prob. 16.3EPCh. 16 - Prob. 16.4EPCh. 16 - Consider the NMOS inverter with enhancement load,...Ch. 16 - Prob. 16.2TYUCh. 16 - (a) Consider the results of Exercise Ex 16.1....Ch. 16 - Prob. 16.5EPCh. 16 - Prob. 16.6EPCh. 16 - (a) Design a threeinput NMOS NOR Logic gate with...
Ch. 16 - Consider the NMOS logic circuit in Figure 16.18....Ch. 16 - Repeat Exercise TYU 16.5 for the NMOS logic...Ch. 16 - The CMOS inverter in Figure 16.21 is biased at...Ch. 16 - swA CMOS inverter is biased at VDD=3V . The...Ch. 16 - A CMOS inverter is biased at VDD=1.8V . The...Ch. 16 - Prob. 16.7TYUCh. 16 - Repeat Exercise Ex 16.9 for a CMOS inverter biased...Ch. 16 - Determine the transistor sizes of a 3input CMOS...Ch. 16 - Design the widthtolength ratios of the transistors...Ch. 16 - Design a static CMOS logic circuit that implements...Ch. 16 - Prob. 16.10TYUCh. 16 - Prob. 16.11TYUCh. 16 - Sketch a clocked CMOS logic circuit that realizes...Ch. 16 - Prob. 16.12EPCh. 16 - Prob. 16.13TYUCh. 16 - Consider the CMOS transmission gate in Figure...Ch. 16 - Prob. 16.15TYUCh. 16 - Prob. 16.14EPCh. 16 - Prob. 16.16TYUCh. 16 - Prob. 16.17TYUCh. 16 - Sketch the quasistatic voltage transfer...Ch. 16 - Sketch an NMOS threeinput NOR logic gate. Describe...Ch. 16 - Discuss how more sophisticated (compared to the...Ch. 16 - Sketch the quasistatic voltage transfer...Ch. 16 - Discuss the parameters that affect the switching...Ch. 16 - Prob. 6RQCh. 16 - Sketch a CMOS threeinput NAND logic gate. Describe...Ch. 16 - sDiscuss how more sophisticated (compared to the...Ch. 16 - Prob. 9RQCh. 16 - Sketch an NMOS transmission gate and describe its...Ch. 16 - Sketch a CMOS transmission gate and describe its...Ch. 16 - Discuss what is meant by pass transistor logic.Ch. 16 - Prob. 13RQCh. 16 - Prob. 14RQCh. 16 - Prob. 15RQCh. 16 - Describe the basic architecture of a semiconductor...Ch. 16 - ‘Sketch a CMOS SRAM cell and describe its...Ch. 16 - Prob. 18RQCh. 16 - Describe a maskprogrammed MOSFET ROM memory.Ch. 16 - Describe the basic operation of a floating gate...Ch. 16 - Prob. 16.1PCh. 16 - Prob. 16.2PCh. 16 - (a) Redesign the resistive load inverter in Figure...Ch. 16 - Prob. D16.4PCh. 16 - Prob. 16.5PCh. 16 - Prob. D16.6PCh. 16 - Prob. 16.7PCh. 16 - Prob. 16.8PCh. 16 - For the depletion load inverter shown in Figure...Ch. 16 - Prob. 16.10PCh. 16 - Prob. D16.11PCh. 16 - Prob. D16.12PCh. 16 - Prob. 16.13PCh. 16 - For the two inverters in Figure P16.14, assume...Ch. 16 - Prob. 16.15PCh. 16 - Prob. 16.16PCh. 16 - Prob. 16.17PCh. 16 - Prob. 16.18PCh. 16 - Prob. D16.19PCh. 16 - Prob. 16.20PCh. 16 - Prob. 16.21PCh. 16 - Prob. 16.22PCh. 16 - In the NMOS circuit in Figure P16.23, the...Ch. 16 - Prob. 16.24PCh. 16 - Prob. 16.25PCh. 16 - Prob. 16.26PCh. 16 - What is the logic function implemented by the...Ch. 16 - Prob. D16.28PCh. 16 - Prob. D16.29PCh. 16 - Prob. 16.31PCh. 16 - Prob. 16.32PCh. 16 - Prob. 16.33PCh. 16 - Consider the CMOS inverter pair in Figure P16.34....Ch. 16 - Prob. 16.35PCh. 16 - Prob. 16.36PCh. 16 - Prob. 16.37PCh. 16 - Prob. 16.38PCh. 16 - Prob. 16.39PCh. 16 - (a) A CMOS digital logic circuit contains the...Ch. 16 - Prob. 16.41PCh. 16 - Prob. 16.42PCh. 16 - Prob. 16.43PCh. 16 - Prob. 16.44PCh. 16 - Prob. 16.45PCh. 16 - Prob. 16.46PCh. 16 - Prob. 16.47PCh. 16 - Prob. 16.48PCh. 16 - Prob. 16.49PCh. 16 - Prob. 16.50PCh. 16 - Prob. 16.51PCh. 16 - Prob. 16.52PCh. 16 - Prob. D16.53PCh. 16 - Figure P16.54 is a classic CMOS logic gate. (a)...Ch. 16 - Figure P16.55 is a classic CMOS logic gate. (a)...Ch. 16 - Consider the classic CMOS logic circuit in Figure...Ch. 16 - (a) Given inputs A,B,C,A,B and C , design a CMOS...Ch. 16 - (a) Given inputs A, B, C, D, and E, design a CMOS...Ch. 16 - (a) Determine the logic function performed by the...Ch. 16 - Prob. D16.60PCh. 16 - Prob. 16.61PCh. 16 - Prob. 16.62PCh. 16 - Sketch a clocked CMOS domino logic circuit that...Ch. 16 - Sketch a clocked CMOS domino logic circuit that...Ch. 16 - Prob. D16.65PCh. 16 - Prob. 16.66PCh. 16 - Prob. 16.67PCh. 16 - The NMOS transistors in the circuit shown in...Ch. 16 - Prob. 16.69PCh. 16 - Prob. 16.70PCh. 16 - Prob. 16.71PCh. 16 - (a) Design an NMOS pass transistor logic circuit...Ch. 16 - Prob. 16.73PCh. 16 - What is the logic function implemented by the...Ch. 16 - Prob. 16.75PCh. 16 - Prob. 16.76PCh. 16 - Prob. 16.77PCh. 16 - Consider the NMOS RS flipflop in Figure 16.63...Ch. 16 - Prob. 16.79PCh. 16 - Consider the circuit in Figure P16.80. Determine...Ch. 16 - Prob. D16.81PCh. 16 - Prob. 16.82PCh. 16 - Prob. 16.83PCh. 16 - Prob. 16.84PCh. 16 - (a) A 1 megabit memory is organized in a square...Ch. 16 - Prob. 16.86PCh. 16 - Prob. 16.87PCh. 16 - Prob. 16.88PCh. 16 - Prob. D16.89PCh. 16 - Prob. 16.90PCh. 16 - Prob. 16.91PCh. 16 - Prob. 16.92PCh. 16 - Prob. D16.93PCh. 16 - Prob. D16.94PCh. 16 - Prob. D16.95PCh. 16 - An analog signal in the range 0 to 5 V is to be...Ch. 16 - Prob. 16.97PCh. 16 - Prob. 16.98PCh. 16 - Prob. 16.99PCh. 16 - The weightedresistor D/A converter in Figure 16.90...Ch. 16 - The Nbit D/A converter with an R2R ladder network...Ch. 16 - Prob. 16.102PCh. 16 - Prob. 16.103PCh. 16 - Prob. 16.104PCh. 16 - Prob. 16.105PCh. 16 - Design a classic CMOS logic circuit that will...Ch. 16 - Prob. D16.111DPCh. 16 - Prob. D16.112DPCh. 16 - Prob. D16.113DP
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- 4. An RC filter stage (R = 33 0, C = 120 HF) is used to filter a signal of 24 V dc with 2 V rms operating from a full wave rectifier. Calculate the percentage ripple at the output of the RC Section for a 100-mA load. Also calculate the ripple of the filtered signal applied to the RC stage. *****END*****arrow_forwardHow many pn junctions are there in a BJT? two O three O four O fivearrow_forwardD-MOSFET: lVtl= 2 V, Idss =10 mA, Is=1.6 mA, rd=14 K, RL=2 K. Calculate the dc drain-to-source voltage. Please write your answer as a V and don’t use units in the answer. Please use one digit after the dot.arrow_forward
- Question 30 The SCR operation characteristic is plotted for Not yet answered O a. la (anode current) vs Ig (gate current), Va (anode – cathode voltage) as a parameter Marked out of 1.00 Ob. P Flag question la vs Va with Ig as a parameter Oc. Ig vs Vg with la as a parameter d. Va vs Ig with la as a parameterarrow_forward%3D For the circuit shown in Figure B23, a = 0.97, calculate the following: i. Collector current (Ic) ii. Collector-Base voltage (VCB) iii. Emitter Current (IE) iv. Base Current (IB) IE Ic 2.5 k2 Ouput 2.8V IB 10V VEE Vcc Figure B23arrow_forwardIn the VI characteristics of JFET When Vgs=0, 1..When we increases the Vds,Id is also increases.(width of deplation region cannot change ) In this case Vds and Id are proportional by ohms law. This is ohmic region 2.. but after a perticular pt. (Pich off voltage)When Vgs Is zero. Id=Idss and is constant (as Vds goes on Increasing Vgd set such width off deplation region to Id become constant) This is active region of JFET 3 but on further Increasing Vds , Id starts suddenly increase (breack down condition) What reason this should happen?arrow_forward
- p?attempt=155796&cmid%3D80728 Which device allows current to flow in one direction only? Oa. Resistor O b. Diode O c. Semiconductor O d. Transistor Question 16 Not yet answered P Flag question Marked out of 1.00 Diode used to maintain constant output voltage is PN Junction diode O b. Zener diode Ос. Tunnel diode FUJITSUarrow_forward1-The output voltage of an emitter follower is a-In phase with Vin . b-Much greater than Vin. c-180° out of phase. d-Generally much less than Vin • 2-The ac emitter resistance of an emitter follower a-Equal the de emitter resistance. b-Is larger than the load resistance. c-Is B times smaller than the load resistance. d-Is usually less than the load resistance. 3-A common-base amplifier can be used when a-Matching low to high impedance. b-A voltage gain without a current gain is required. c-A high- frequency amplifier is needed. d-All of the above. 4-If the voltage generator is 5 mV in an emitter follower, the output voltage across the load is closest to a-5 mV. b-150mV. c-0.25 mV. d-0.5 mV.arrow_forwardIn a JFET, the drain current is 10.1mA at VGS equal to half of VGSoff. Determine the value of IDSS in mA.arrow_forward
- Solve for Collector Resistance (RC)arrow_forward(b) Draw the ID - VD curves for this MOSFET for ±VD for V₁ = 0 and V₁ = 1 V. VȚ = 1V. n V₁ + p-type D ID V₁arrow_forwardThe gate voltage in a silicon JFET in the saturation region is reduced from Vg= -3.1V to Vg= -2.8V. If the resultant drain source current IDS changes from 1mA to 1.9mA calculate the transconductance of the JFET in units of mA/V. Give your answer to 1 decimal place.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSON
Delmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage Learning
Programmable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill Education
Electric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSON
Engineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,
CMOS Tech: NMOS and PMOS Transistors in CMOS Inverter (3-D View); Author: G Chang;https://www.youtube.com/watch?v=oSrUsM0hoPs;License: Standard Youtube License