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Repeat Exercise Ex 16.9 for a CMOS inverter biased at
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Microelectronics: Circuit Analysis and Design
- 2. Show how the output conductance of a transistor affects the voltage transfer characteristics (butterfly curve) of a cross-coupled inverter cell? (output resistance/conductance defined in the image below). on-resistance output resistance on-current -1,(Ves = Vps = Vpp) RON I ps transconductance (mA/um) 8m AVas lWas GS V ps VDD Assume symmetric N- and P-MOS devices.arrow_forwardA full bridge inverter with RLC load having the following values: R=7.5 Ohms, L=12.5 mH, C=22 uF. The switching frequency is 500 Hz and the DC input voltage is 180V. The RMS magnitude of the third and fifth harmonics of the load current are respectively equal to: Select one: Oa. 0.3375A, 0.1185A O b. None of these O c. 0.477A, 0.167A d. 0.675A, 0.237Aarrow_forwardConsider a CMOS inverter, which the following device parameter nMOS VTO, n = 0.8 V pMOS VTO, p = -1.0V unCox = 50 μA/V² upCox = 20 μA/V² The power supply voltage is VDD = 5V. Both transistors have a channel length of Ln = Lp = 1 um. The total output load capacitance of this circuit is Cout= 2 pF, which is independent of transistors dimensions. i) ii) iii) Determine the channel width of the nMOS and the pMOS transistors such that the switching threshold voltage is equal to 2.2 V, and the output rise time is Trise = 5 ns Calculate the average propagration delay time tp for the circuit designed in (a) How do the switching threshold Vth and the delay times change if the power supply voltage is dropped from 5 V to 3.3 V. Provide the interpretation of the results.arrow_forward
- A single-phase full bridge inverter is fed for a dc source such that fundamental component of output voltage is 230 V. The input frequency is 50 Hz. Find the rms value of MOSFET and diode currents if load is RLC: R=2 0, L=19 mH, and C=400 µF.arrow_forwardA single phase bridge inverter has an RLC load with R= 20 ohms. L = 32 mH and C = 0.115 mF. The inverter frequency is fo= 60 Hz and DC input voltage is Vs = 110 V. The RMS magnitude of the 1st harmonic of the output current is equal to: Select one: a. 4.34A b. 6.42A OC. 0.955A Qd. None of thesearrow_forwardA full bridge inverter with RLC load having the following values: R=7.5 Ohms, L=12.5 mH, C-22 uF. The switching frequency is 500 Hz and the DC input voltage is 180V. The average current supply (consider up to the fifth harmonics in calculation) would be equal to: Select one: a. None of these b. 3.84A Ⓒc. 1.64A Ⓒd. 5.74Aarrow_forward
- a) Design a saturated load inverter shown in the figure below with VDD = 3.3 V and VL = 0.25 V. Assume Ipp = 30 µA, K’n = 25 µA/V²' and VIN = 0.65 V. Verify your design using PSPICE or Multisim package. b) Find the noise margins (NML and NMH) associated with the designed inverter graphically and compare them with your calculation. VDD ML HE VSB Msarrow_forwardA single-phase full-bridge inverter fed by a 325 V DC produces a symmetric quasi-square waveform across 'ab' as shown. To achieve a modulation index of 0.8. the angle 0 expressed in degrees should be. (Round off to 2 decimal places.) (Modulation index is defined as the ratio of the peak of the fundamental component of Vab to the applied DC value.) - 325 V Vab 325 V 0 -325 V 8/2 11 2x Earrow_forwardV de 2л -а wt a 2л -Vác de An inverter which produces the output voltage shown the figure above is used to supply the series R (=20[Ohm]) and L(330 [mH]) load. Determine the Total Harmonic Distorsion (THD) of the load current up to n 3 for the DC input voltage 125 [V], the output frequency of 60 [Hz], and a=25 [Degree].arrow_forward
- ..A CMOS Inverter using a Power Supply of 3.3 V and Channel length = 20 nm is built in a process with the following specification: NFET: Process Transconductance = 167 (µA/V²); Threshold voltage = 0.58 V Width= 6 µm PFET: Process Transconductance = 75 (µA/V²) ; Threshold voltage = - 0.63V ; Width = 11 µm %3D a) Calculate Device Transconductances of the nFET and the pFET. b) Estimate the Midpoint voltage of the Inverter.arrow_forwardDesign a resistive-load inverter with R = 5 kohm, such that VoL = 0.5 V. The enhancement-type nMOS driver transistor has the following parameters: VDD =5V, Vto= 0.8V, µCox = 30 µA/N² a. find the required W/L b. Determine VIL, VIH c. Determine NML, NMH d. calculate the static power consumptionarrow_forwardDesign the following circuits as shown in the block diagram inverter de chopper ACOVA f = Var Rectif. de CR de=vararrow_forward
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