Consider the classic CMOS logic circuit in Figure P16.56 (a) What is the logic function performed by the circuit? (b) Design the PMOS network. (c) Determine the transistor W/L ratios to provide symmetrical switching times equal to the basic CMOS inverter with
Figure P16.56
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Microelectronics: Circuit Analysis and Design
- a) A standard TTL inverter gate is shown in the figure. The supply voltage is 5V. Calculate the output voltage for both logic low and logic high input cases assuming input voltages respectively as 0.11V and 4.2V. Br= 130; BR = 0.24. You can make approximations when needed. Br = IcIs active region; BR = IE/ls inverse active region b) Assume you connect a resistor of 1.8K to the output of the circuit when the output is at logic high. What will be the change in the output voltage? 1302 R3 1.6k2 R, 4k2 Input o T, Output T, V, V. IkQ R,arrow_forwardDescribe the functionality of a three-state inverter.arrow_forwardUsing the sine PWM method with the full bridge inverter below, it is desired to generate a voltage of 50 Hz on the serial RL load. A voltage of 120 V DC is applied to the input of the inverter circuit. Amplitude modulation rate ma -0.9 and frequency modulation rate mf -19. The resistance of the series RL load is 15 OHM and the coil inductance is 40 mH. a) What is the power drawn by the load resistor?b) What is the total harmonic distortion value (THD) of the load current?arrow_forward
- (e) Describe, with the help of sketches, the definition and meaning of noise margins in an inverter logic gate.arrow_forwardConsider a four-input CMOS NOR logic gate. Draw the circuit, theu: a) Determine the W/L ratios of the transistors to provide for symmetrical switching based on the CMOS inverter design with (W/L),= 2 and (W/L)p= 4. b) If the load capacitance of the NOR gate doubles, determine the required W/L ratios to provide the same switching speed as the logic gate in part (a).arrow_forwardA square-wave inverter has an R-L load with R = 15 N and L = 10 mH. The inverter output frequency is 400 Hz 1. Determine the value of the de source required to establish a load current which has a fundamental frequency component of 10 A rms. (b) Determine the THD of the load current. (c) Sketch the output and input currents. (a)arrow_forward
- Explain principle operation and advantages of 3 level neutral point clamped (NPC) inverter compared to conventional 2 level inverter.arrow_forwardDiscussion and calculations 1. What is the function of inverter? 2. What are the differences between half-bridge and full-bridge inverters ? 3. Compare between the simulation and theoretical results for output voltages.arrow_forwardQ5 Consider a four-input CMOS NAND logic gate. Draw the circuit, then: Q6 a) Determine the W/L ratios of the transistors to provide for symmetrical switching based blcon the CMOS inverter design with (W/L) 2 and (W/L), 4. b) If the load capacitance of the NOR gate becomes 5 times the original value, determine the required W/L ratios to provide the same switching speed as the logic gate in part (a). Design a CMOS circuit to implement the logic function. The design should not include a CMOS inverter at the output. F= ABC + ACD + ACDarrow_forward
- What is the power-delay product for a symmetrical CMOSinverter with (W/L)N = 2/1, (W/L)P = 5/1,VDD = 2.5 V, and C = 0.3 pF? (b) Repeat forVDD = 2.0 V. (c) Repeat for VDD = 1.8 V.? How much power does the inverter dissipate if it is switching at a frequency of 100 MHz?arrow_forward3. PWM Inverter The full bridge inverter is used to produce a 60 Hz voltage across a series R-L load using bipolar PWM. The dc input to the bridge is 100 V, the amplitude modulation ratio ma is 0.8 and the frequency modulation ratio m, is 21. The load has a resistance of R = 10n and a 20mH. Determine the a) the amplitude of the 60-Hz component of the output voltage and load current b) power absorbed by the load resistor c) THD of load series inductance of L current. m,=1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.10 0.30 1.20 0.20 1.24 n=1 0.60 0.71 0.82 0.92 1.01 1.08 1.15 1.27 n=m, n=mf±2 0.32 0.27 0.22 0.17 0.13 0.09 0.06 0.03 0.02 0.00arrow_forward5. Write a 1-page summary (typed, 1.5 spaced) of the fabrication process for a silicon CMOS inverterarrow_forward
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