Problem 16.1EP: Consider the NMOS inverter with resistor load in Figure 16.3(a) biased at VDD=3V . Assume transistor... Problem 16.2EP: The enhancementload NMOS inverter in Figure 16.5(a) is biased at VDD=3V . The transistor parameters... Problem 16.3EP Problem 16.4EP Problem 16.1TYU: Consider the NMOS inverter with enhancement load, as shown in Figure 16.5(a), biased at VDD=1.8V .... Problem 16.2TYU Problem 16.3TYU: (a) Consider the results of Exercise Ex 16.1. Assume 100,000 resistorload inverters are fabricated... Problem 16.5EP Problem 16.6EP Problem 16.4TYU: (a) Design a threeinput NMOS NOR Logic gate with depletion load such that VOL(max)=50mV and such... Problem 16.5TYU: Consider the NMOS logic circuit in Figure 16.18. Assume transistor parameters of kn=100A/V2 and... Problem 16.6TYU: Repeat Exercise TYU 16.5 for the NMOS logic circuit in Figure 16.19, except assume the threshold... Problem 16.7EP: The CMOS inverter in Figure 16.21 is biased at VDD=2.1V , and the transistor threshold voltages are... Problem 16.8EP: swA CMOS inverter is biased at VDD=3V . The inverter drives an effective load capacitance of... Problem 16.9EP: A CMOS inverter is biased at VDD=1.8V . The transistor parameters are VTN=0.4V , VTP=0.4V ,... Problem 16.7TYU Problem 16.8TYU: Repeat Exercise Ex 16.9 for a CMOS inverter biased at VDD=5V with transistor parameters of VTN=0.8V... Problem 16.10EP: Determine the transistor sizes of a 3input CMOS NOR logic gate. Symmetrical switching times are... Problem 16.11EP: Design the widthtolength ratios of the transistors in the static CMOS logic circuit of Figure 16.40.... Problem 16.9TYU: Design a static CMOS logic circuit that implements the logic function Y=(ABC+DE) . (Ans. NMOS... Problem 16.10TYU Problem 16.11TYU Problem 16.12TYU: Sketch a clocked CMOS logic circuit that realizes the exclusive OR function. Problem 16.12EP Problem 16.13TYU Problem 16.14TYU: Consider the CMOS transmission gate in Figure 16.56(a). Assume transistor parameters of VTN=0.4V and... Problem 16.15TYU Problem 16.14EP Problem 16.16TYU Problem 16.17TYU Problem 1RQ: Sketch the quasistatic voltage transfer characteristics of an NMOS inverter with depiction load.... Problem 2RQ: Sketch an NMOS threeinput NOR logic gate. Describe its operation. Discuss the condition under which... Problem 3RQ: Discuss how more sophisticated (compared to the basic NOR arid NAND) logic functions can be... Problem 4RQ: Sketch the quasistatic voltage transfer characteristics of a CMOS inverter. Discuss the various... Problem 5RQ: Discuss the parameters that affect the switching power dissipation in a CMOS inverter. Problem 6RQ Problem 7RQ: Sketch a CMOS threeinput NAND logic gate. Describe its operation. Determine the relative transistor... Problem 8RQ: sDiscuss how more sophisticated (compared to the basic NOR and NAND) logic functions can be... Problem 9RQ Problem 10RQ: Sketch an NMOS transmission gate and describe its operation. What is the maximum output voltage? Problem 11RQ: Sketch a CMOS transmission gate and describe its operation. Why is the quasistatic output voltage... Problem 12RQ: Discuss what is meant by pass transistor logic. Problem 13RQ Problem 14RQ Problem 15RQ Problem 16RQ: Describe the basic architecture of a semiconductor randomaccess memory. Problem 17RQ: ‘Sketch a CMOS SRAM cell and describe its operation. Discuss any advantages and disadvantages of... Problem 18RQ Problem 19RQ: Describe a maskprogrammed MOSFET ROM memory. Problem 20RQ: Describe the basic operation of a floating gate MOSFET and how this can be used in an erasable ROM. Problem 16.1P Problem 16.2P Problem D16.3P: (a) Redesign the resistive load inverter in Figure 16.3(a) so that the maximum power dissipation is... Problem D16.4P Problem 16.5P Problem D16.6P Problem 16.7P Problem 16.8P Problem 16.9P: For the depletion load inverter shown in Figure 16.7(a), assume parameters of VDD=3.3V , VTND=0.5V ,... Problem 16.10P Problem D16.11P Problem D16.12P Problem 16.13P Problem 16.14P: For the two inverters in Figure P16.14, assume (W/L)L=1 for the load devices and (W/L)D=10 for the... Problem 16.15P Problem 16.16P Problem 16.17P Problem 16.18P Problem D16.19P Problem 16.20P Problem 16.21P Problem 16.22P Problem 16.23P: In the NMOS circuit in Figure P16.23, the transistor parameters are: (W/L)X=(W/L)Y=4 , (W/L)L=1 ,... Problem 16.24P Problem 16.25P Problem 16.26P Problem 16.27P: What is the logic function implemented by the circuit in Figure P16.27. Figure P16.27 Problem D16.28P Problem D16.29P Problem 16.31P Problem 16.32P Problem 16.33P Problem 16.34P: Consider the CMOS inverter pair in Figure P16.34. Let VTN=0.8V , VTP=0.8V , and Kn=Kp . (a) If... Problem 16.35P Problem 16.36P Problem 16.37P Problem 16.38P Problem 16.39P Problem 16.40P: (a) A CMOS digital logic circuit contains the equivalent of 4 million CMOS inverters and is biased... Problem 16.41P Problem 16.42P Problem 16.43P Problem 16.44P Problem 16.45P Problem 16.46P Problem 16.47P Problem 16.48P Problem 16.49P Problem 16.50P Problem 16.51P Problem 16.52P Problem D16.53P Problem D16.54P: Figure P16.54 is a classic CMOS logic gate. (a) What is the logic function performed by the circuit?... Problem D16.55P: Figure P16.55 is a classic CMOS logic gate. (a) What is the logic function performed by the circuit?... Problem D16.56P: Consider the classic CMOS logic circuit in Figure P16.56 (a) What is the logic function performed by... Problem D16.57P: (a) Given inputs A,B,C,A,B and C , design a CMOS circuit to implement the logic function... Problem D16.58P: (a) Given inputs A, B, C, D, and E, design a CMOS circuit to implement the logic function... Problem 16.59P: (a) Determine the logic function performed by the circuit in Figure P16.59. (b) Determine the W/L... Problem D16.60P Problem 16.61P Problem 16.62P Problem D16.63P: Sketch a clocked CMOS domino logic circuit that realizes the function Y=AB+AB . Assume that both the... Problem D16.64P: Sketch a clocked CMOS domino logic circuit that realizes the function Y=AB+C(D+E) . Problem D16.65P Problem 16.66P Problem 16.67P Problem 16.68P: The NMOS transistors in the circuit shown in Figure P16.68 have parameters Kn=0.2mA/V2 , VTN=0.5V ,... Problem 16.69P Problem 16.70P Problem 16.71P Problem D16.72P: (a) Design an NMOS pass transistor logic circuit to perform the function Y=A+B(C+D) . Assume that... Problem 16.73P Problem 16.74P: What is the logic function implemented by the circuit in Figure P16.74? Figure P16.74 Problem 16.75P Problem 16.76P Problem 16.77P Problem 16.78P: Consider the NMOS RS flipflop in Figure 16.63 biased at VDD=2.5V . The threshold voltages are 0.4 V... Problem 16.79P Problem 16.80P: Consider the circuit in Figure P16.80. Determine the state of the outputs for various input signals.... Problem D16.81P Problem 16.82P Problem 16.83P Problem 16.84P Problem 16.85P: (a) A 1 megabit memory is organized in a square with each memory cell being individually addressed.... Problem 16.86P Problem 16.87P Problem 16.88P Problem D16.89P Problem 16.90P Problem 16.91P Problem 16.92P Problem D16.93P Problem D16.94P Problem D16.95P Problem 16.96P: An analog signal in the range 0 to 5 V is to be converted to a digital signal with a quantization... Problem 16.97P Problem 16.98P Problem 16.99P Problem 16.100P: The weightedresistor D/A converter in Figure 16.90 is to be expanded to an 8bit device. (a) What are... Problem 16.101P: The Nbit D/A converter with an R2R ladder network in Figure 16.92 ¡s to be designed as a 6bit D/A... Problem 16.102P Problem 16.103P Problem 16.104P Problem 16.105P Problem D16.110DP: Design a classic CMOS logic circuit that will implement the logic function Y=A(B+C)+DE . Problem D16.111DP Problem D16.112DP Problem D16.113DP format_list_bulleted