a) What is n-type semiconductor materials? What are the majorityand the minority cariers?b) What is p-type semiconductor materials? What are the majorityand the minority cariers?c) What is depletion region of a p-n junction diode?d) Describe in your own words the forward-bias and reverse-bias conditions of a p-n junction diode.e) Draw a Diode Symbol and label the anode and the cathode.SiGe2 kaf) Find V, in the circuit shown in+20 V2 k215VFig.Fuad Al-MannaiEENG261Page 1

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Answered: a) What is n-type semiconductor…

Electric Motor Control

10th Edition

ISBN:9781133702818

Author:Herman

Publisher:Herman

Chapter59: Motor Startup And Troubleshooting Basics

Section: Chapter Questions

Problem 12SQ: How is a solid-state diode tested? Explain.

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How is a solid-state diode tested? Explain.
(1) Describe the behaviour of a p-n junction under forward and reverse biasing in terms of semiconductor behaviour and sketch the V-I Characteristics of a p-n Junction.
In your own words and with the aid of suitable diagrams, describe the following: Explain what the barrier potential is and how it is developed in pn junction diode. What is the typical value of the barrier potential for a silicon diode?
Here are some statements about a p-n junction diode. Some are TRUE and some are FALSE. i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward current flow. ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction. iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flowing across the junction. iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the junction. v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction. vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the band-gap of the semiconductor. Which of the following statements is correct: (i) and (ii) are both FALSE (ii) and (v) are both FALSE (iii) and (vi) are both FALSE
A p-type semiconductor joined to an n-type semiconductor ... Pick those that apply. Will not allow current to flow in either direction. Has electron current flowing from the n-type to the p-type material Makes a diode Allows positive current flow from the p-type to the n-type material
A. In your own words and with the aid of suitable diagrams, describe the following: a) The zener diode and its characteristics. b) Design a limitter circuit using diodes to limit the output voltage to 4.7V during the positive signwave and to -6.7V in the negative signwave. B. Consider the following circuit. Suppose that diode D1 is ideal. a) Give the state of the diode D1: conductive or blocking. Explain. b) Calculate the current flowing through D1. c) Calculate the voltage VR2 across the resistance R2. 1kQ D1 R1 R2 1) ImA 10V 4KQ C. In the circuit shown below the knee current for the ideal Zener diode is 10 mA. Calculate the minimum value of load resistance RL in order to maintain 5 volts across the load resistance RL. 1002 IL 10V V, = 5V A R
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Consider the circuit shown in Figure 2. The cut-in voltage of each diode is . Let and assume both diodes are conducting. Determine if this is a valid assumption and explain your answer. And calculate the values of IR, ID, Ip2, and V.. Rj =1.7 kQ ww VB =1 V D1 Dz R2D 4 kQ Figure 2
QUESTION 1 Provide an example each for a trivalent and pentavalent element. Describe the doping process of Silicon (Si) to obtain p-type and n-type semiconductor material. a) b) c) Explain forward bias and reverse bias conditions of an ideal p-n junction diode. Sketch the I-V characteristic of Si and Ge diode. Discuss why Si based semiconductor is move favored in production of solid state devices.
What is the resistance in the forward-conduction region of the shockley diode based from the problem
4. If the diode is open in the circuit, the load voltage is? 5. If the resistor is ungrounded in the circuit, the voltage measured with a DMM between the top of the resistor and ground is closest to? 6. The load voltage measures 12 V in the circuit. The trouble may be? 7. Using the third approximation in the circuit, how low must R, be before the diode's bulk resistance must be considered? + Vs RL 1 k2 12 V Figure
Name the majority carrier in an n-type and p-type extrinsic semiconductor. Briefly explain the behavior of the carriers during the formation of the P-N junction and their relation to the depletion region appears in the junction. (c)

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