Sketch the pn junction energy band diagram in equilibrium (zero bias) showing the Fermi level as a flat horizontal line. Review the meaning of the Fermi level and position of Fermi level in p and n type semiconductors.

Briefly discuss the difference between Diode Piecewise-linear model, Simplified model, and Ideal device/ equivalent circuit.  Study the diode specification sheets of a 1N4001 and 1N5401 diodes provided by the manufacturer and compare their difference. Give typical application of each. Discuss briefly how to test junction diode.

A semiconductor diode having ideal forward and reverse characteristics is used in a half-wave rectifier circuit supplying a resistive load of 500 ohm. If the r.m.s. value of the sinusoidal supply voltage is 230 V, determine (i) the r.m.s. diode current and (ii) power dissipated in the load.

When a p-and n-type semiconductor are joined at an interface their Fermi energies equilibriate. If we extend this thinking and apply it to an interface between a metal and (p-or n-type) semiconductor to make a metal-semiconductor heterojunction, what will the expected outcome be? Use diagrams and words to explain.

Choose the doping material that will cause silicon to become a p-type semiconductor. A. Ge B. As C. Te D. B

1) Describe how to make n- and p-type semiconductors for silicon. 2) Describe the location of the Fermi energy levels in the band gap for n-type and p-type semiconductors.

In a N-type semiconductor, the positive of the Fermi level O a. Is lower than the centre of energy gap O b Can be anywhere depending upon the doping concentration C. Is higher than the centre of energy gap Od. Is at the centre of the energy gap Clear my choice e Proiect Jump to: