Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 13, Problem 13.6TYU
To determine
The value of
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c. For the circuit shown in Figure, determine lc and VCB. Assume the transistor to be made of Silicon.
Ic
RE=1.6 kn
Rc=1.1 kn
EE=8 V
Vcc= 20 v
3. Write down which transistor structure each curve characteristic belongs to in the figure.
Ip
-VGS
-VGS
+VGs
(c)
VGS
(b)
(a)
The arrow on the symbol of MOSFET indicates
O a. that it is a N-channel MOSFET
O b. that it is a P-channel MOSFET
Oc. the direction of electrons
O d. the direction of conventional current flow
Chapter 13 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 13 - Prob. 13.1EPCh. 13 - Prob. 13.2EPCh. 13 - Prob. 13.4EPCh. 13 - Repeat Example 13.5 assuming Early voltages of...Ch. 13 - Prob. 13.6EPCh. 13 - Prob. 13.3TYUCh. 13 - Prob. 13.4TYUCh. 13 - Prob. 13.5TYUCh. 13 - Prob. 13.6TYUCh. 13 - Prob. 13.8EP
Ch. 13 - Prob. 13.11EPCh. 13 - Prob. 13.10TYUCh. 13 - Prob. 13.12TYUCh. 13 - Prob. 13.12EPCh. 13 - Prob. 13.13EPCh. 13 - Prob. 13.15EPCh. 13 - Prob. 13.15TYUCh. 13 - Consider the LF155 BiFET input stage in Figure...Ch. 13 - Describe the principal stages of a generalpurpose...Ch. 13 - Prob. 2RQCh. 13 - Prob. 3RQCh. 13 - Describe the operation and characteristics of a...Ch. 13 - Describe the configuration and operation of the...Ch. 13 - What is the purpose of the resistorin the active...Ch. 13 - Prob. 7RQCh. 13 - Prob. 8RQCh. 13 - Describe the frequency compensation technique in...Ch. 13 - Sketch and describe the general characteristics of...Ch. 13 - Prob. 11RQCh. 13 - Sketch and describe the principal advantage of a...Ch. 13 - Prob. 13RQCh. 13 - What are the principal factors limiting the...Ch. 13 - Consider the simple MOS opamp circuit shown in...Ch. 13 - Prob. 13.2PCh. 13 - Prob. 13.5PCh. 13 - Consider the input stage of the 741 opamp in...Ch. 13 - Prob. 13.7PCh. 13 - Prob. 13.8PCh. 13 - Prob. 13.10PCh. 13 - The minimum recommended supply voltages for the...Ch. 13 - Prob. 13.12PCh. 13 - Consider the 741 opamp in Figure 13.3, biased with...Ch. 13 - Prob. 13.14PCh. 13 - Consider the output stage of the 741 opamp shown...Ch. 13 - Prob. 13.16PCh. 13 - Prob. 13.19PCh. 13 - Prob. 13.20PCh. 13 - Prob. 13.21PCh. 13 - Prob. 13.22PCh. 13 - Prob. 13.23PCh. 13 - Prob. 13.24PCh. 13 - (a) Determine the differential input resistance of...Ch. 13 - An opamp that is internally compensated by Miller...Ch. 13 - The CMOS opamp in Figure 13.14 is biased at V+=5V...Ch. 13 - Prob. 13.34PCh. 13 - Consider the MC14573 opamp in Figure 13.14, with...Ch. 13 - Prob. 13.36PCh. 13 - Prob. 13.37PCh. 13 - Prob. 13.39PCh. 13 - Prob. 13.41PCh. 13 - In the bias portion of the CA1340 opamp in Figure...Ch. 13 - Prob. 13.57PCh. 13 - In the LF155 BiFET opamp in Figure 13.25, the...
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- Q23 For the circuit shown in Figure B23, a 0.96. calculate the following: Collector current (Ic) Collector-Base voltage (VCB) iii. Emitter Current (Ig) iv. Base Current (IB) Ic 2 2.5 kQ Output 4V 1B 14V Ncc EEarrow_forwardA Bipolar junction Transistor with curreat amplification factor being 100, Input Base current is 50μA. Collector voltage is 10 V and biasing voltage being +20 V. Find followings a. Collector current b. Resistance (R1) c. Collector voltage , Emitter voltage , Base Voltage & Collector-Emitter Voltage.arrow_forwardQa: A transistor dissipates 50W in an ambient temperature of 60°C, the thermal resistances are 0-0.5 °CW¹, 8ca-4 °CW. Determine the junction temperature without a heat sink. Determine the thermal resistance of the heat sink to avoid the junction temperature exceeding 180°C. )arrow_forward
- Problem5: For the common base circurt shown in figure find I. and VCB. Assume transistor is Silicon (a-0.98) Ic Rp= 1.5 ko Rc= 1.2 kn VEE = 8 V. Vcc= 18 Varrow_forwardProblem5: For the common base circuit shown in figure find L and Vca. Assume transistor is Silicon.(a=0.98) IE Ic RE= 1.5 kQ Rc= 1.2 k VEE =8 V Vcc= 18 Varrow_forward........ (Figure-1) R. RB= 380kN,Rc= 1kN B = 100, VBB = Vcc=12V RB ww Vec CC ......... I, V CE СЕ V ВЕ BB Q-1-b) Describe briefly the input / output characteristics and application of Common Emitter BJT Configurationarrow_forward
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- For the circuit shown in Figure B23, a = 0.94, calculate the following: i. Collector current (Ic) ii. Collector-Base voltage (VCB) ii. Emitter Current (IE) iv. Base Current (IB) IE Ic 2.5 kN Ouput 3V IB 15V V EE Vcc Figure B23arrow_forwardDescribe the application and use of Junction Field-Effect Transistors (JFETs)arrow_forwardQUESTION 1 By referring to Figure Q1, determine: a) The Q-point values of Ic and VCE. b) Draw the DC load line and plot the Q-point based on answer from Q1(a). c) The diode emitter resistance, re and draw re transistor model (AC equivalent circuu). d) The input impedance, Zi as seen from the input voltage. e) The output impedance, Z, as seen from output. f) The voltage gain, Av and the current gain, A¡.arrow_forward
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