The CMOS op−amp in Figure 13.14 is biased at
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Microelectronics: Circuit Analysis and Design
- 2. 3. 5. Using the data when the gate voltage is 0, explain how you could use your JFET as a two-terminal current source that gives a current of Ipss. (a) Does the experimental data indicate that the transconductance is a constant at all points? (b) From your experimental data, what evidence indicates that a JFET is a nonlinear device? Why should a JFET be operated with only reverse bias on the gate source?arrow_forwardTransistors originally were made with germanium but modern transistors use silicon for its higher heat tolerance. Transistors amplify and switch signals. They can be analog or digital. Two prevalent transistors today are Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) and Bipolar Junction Transistors (BJT).In your own understanding in the field of electronics can you compare and contrast which one has merit over the other ?arrow_forwardQ-3. Find the drain-source voltage, Vos, for the E- MOSFET circuit given below. The device parameters are: Ioss = 4 mA and Vm = 2 V. +15V Rp- 2k 4M R1 + Vps 2M R2arrow_forward
- 1. Determine the operating point (I³, Ic, VBE, and VCE) and the small-signal model of Q₁1 for each of the circuits shown below. Assume Is = 2×10-¹7A, ß = 100, and VA = ∞ for both NPN and PNP Rc1kQ (a) + -Vcc=2.5 V 1.7 V Q1 + A 1kQ (b) Vcc 2.5 Varrow_forwardExplain the following statements:(a) IG is zero amperes for a JFET transistor(b) High input resistance of a JFET(c) The application of a positive VGS of an n-channel D-MOSFET results in an ID exceeding IDSS.arrow_forward1. Design a fixed-base BJT bias circuit, similar to the one shown in Figure 1, such that VCE = 5.5 V. Assume VBE (on) = 0.7 V and 3=150 for the transistor. 5V HUF RB ww Figure 1 1.5k Q2N2222 12V Note: Use PN2222A in Multisimarrow_forward
- Complete the given BJT circuit. Solve for the value of the resistors and the voltage supply that will satisfy the given DC loadline. Assume IC=IE and RC=RE. Show and label properly the required final circuit. 5 mA 2.5 mA * IC IC 0 15 V 30V VCE RB B +VCC C E RC B=100 RE ...arrow_forwardIn the BJT circuit below, assume VBE 0.6V and CE current gain ß very large. Then the collector voltage is? 33k 11k = 2k 1k 12Varrow_forwardThe maximum values in the transistor circuit transferred to the side are given below. Maximum VCC voltage of BJT under normal conditionscalculate. PD(max)=24/100 W VCE(MAX)=20V IC(MAX)=100mA ßDC=150arrow_forward
- An MSP430 10bit ADC is set up with reference voltage of VR+ = 1.5 V and VR-= 0 V. What is the resolution for this converter.arrow_forward5V B OV OV For all the MOSFETS assume Vth=1V and k =50 mA/V² R₁ = 4700 Ao M₁ M₂ B Indicate and verify the state of each MOSFET and Vo for the following input combinations. Fill out the table for each assumed state of the MOSFET for every input combination. Use Rds(on) approximation for linear operation and three significant figures for the voltages. M1 is assumed to be in saturation. If Vgs = 2 V, Vds = 4V, Vds > Vgs - Vth 4>2-1 4> 1 (ok) Vgs > Vth (2>1) A M2 state M3 state V. 0 OV 5 V R₂ = 560Ω 5V M1 state M3arrow_forwardFrom the figure shown, when S1 is at 1 : up position; the following statement is not correct except: (a) Collector-emitter voltage of Q1 is approximately zero (b) the LED will illuminate (c) the base voltage of Q2 is equal to 9 V (d) (b) and (c)arrow_forward
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