Consider the output stage of the 741 op−amp shown in Figure 13.8. Assume
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Microelectronics: Circuit Analysis and Design
- What must be the minimum power rating for the external pass transistor used with a 7815 regulator in a circuit such as that shown in Figure below? The input voltage is 30 V and the load resistance is 10 n. The maximum internal current is to be 700 ma Assume that there is no heat sink for this calculation. Keep in mind that the use of a heat sink increases the effective power rating of the transistor and you can use a lower rated transistor. VIN Re VoUT 7815 RLarrow_forwardSketch the de load line, quiescent collector current, quiescent voltsge, input power, output power and maximum efficiency of the circuit shown an Figure. The input results in a base current of 5 mA peak to peak What maximum output power can be delivered by the circuit, if the input voltage is changed resulting in a base current of 10mA peak to peak and hence find the maximum etficiency. cc=15 V R =18 2 -25arrow_forwardThe arrow on the symbol of MOSFET indicates O a. that it is a N-channel MOSFET O b. that it is a P-channel MOSFET Oc. the direction of electrons O d. the direction of conventional current flowarrow_forward
- Q23 For the circuit shown in Figure B23, a 0.96. calculate the following: Collector current (Ic) Collector-Base voltage (VCB) iii. Emitter Current (Ig) iv. Base Current (IB) Ic 2 2.5 kQ Output 4V 1B 14V Ncc EEarrow_forwardThe arrow on the symbol of MOSFET indicates O a. that it is a N-channel MOSFET O b. the direction of conventional current flow O c. that it is a P-channel MOSFET O d. the direction of electronsarrow_forward= Assume Vcc = 18V, L₁= 5nH, C3 = 1000pF, total current drain of 1.5mA, V, 15Vp-p, Q = 100 Vin C₁₂ R₁₂ 10 ΚΩ Vcc RL · 10 ΚΩ 1. If Vin = 2V RMS: a. Calculate the peak-to-peak input voltage at the base. b. Calculate the DC voltage measured at the base. c. Draw the AC voltage at the base as it would be seen on the oscilloscope with appropriate detail.arrow_forward
- circuits by using the small signal models of the transistor. Assume the Early voltage of the transistors are infinitely large. Calculate the small-signal input and output impedances of the following Vcc R1 R1 Rout VB RE Rin R2arrow_forwardA Bipolar junction Transistor with curreat amplification factor being 100, Input Base current is 50μA. Collector voltage is 10 V and biasing voltage being +20 V. Find followings a. Collector current b. Resistance (R1) c. Collector voltage , Emitter voltage , Base Voltage & Collector-Emitter Voltage.arrow_forwardQ-3. Find the drain-source voltage, Vos, for the E- MOSFET circuit given below. The device parameters are: Ioss = 4 mA and Vm = 2 V. +15V Rp- 2k 4M R1 + Vps 2M R2arrow_forward
- Reference to the step down converter given in the figure below, if the input supply is 12v, and if the converter has to provide 3.3V output voltage at 10A maximum current to a load. Ignore the switching losses in the transistor. Assume that the power components have the following parameters: MOSFET : Rps(oN) = 10m2 Resistance of the inductor : Rind(Cu) = 2 m2 Diode forward voltage Vp= 0.5V. ir ip Vsupply D A Load a) Calculate the total conduction losses at full load in the MOSFET, in the diode and in the inductor. Hint: Pconduction = Io² Rps(ON) D + lo Vp (1 – D) + Io² Rmd(Cu) 1-1 b) Calculate the efficiency of the converter. c) Compare and comment on the conduction losses of the MOSFET, the diode and the inductor.arrow_forwardThis graphical solution represents IDss Q-point VGS VP VGG Select one: A. self bias for an n-channel JFET B. fixed-bias configuration for an n-channel JFET. C. voltage-divider bias for an n-channel JFET D. None of the abovearrow_forwardAn NPN silicon transistor having a nominal ß of 100 is to be used in a CE configuration with Vcc= 15 V. The Q point is to be Ic = 4mA and VcE = 12V . Now design the circuit diagram.arrow_forward
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