QUESTION 1 By referring to Figure Q1, determine: a) The Q-point values of Ic and VCE. b) Draw the DC load line and plot the Q-point based on answer from Q1(a). c) The diode emitter resistance, re and draw re transistor model (AC equivalent circuu).

1) For a diode connected transistor find the AC equivalent resistance.

State and explain the relation of drain current versus gate to source voltage for an MOSFET.

1) In the context of semiconductors, describe the following:(a) Intrinsic and extrinsic semiconductor. (b) Drift velocity of carriers.(c) Band-gap energy.(d) Frequency of light emitted by an LED.

05: Choose the correct answer: 1. The current in FET flows between terminals. (Drain and gate Drain and source Gate and soarce None of these) 2. The threshold voltage is in enhancement type metal oxide semiconductor field effect transistor. (Positive Negative Zero Positive) 3. The drift current density effected by (An electric filed • Concentration gradient in holes • Concentration gradient in free electrons All of these) 4. The band gap between conduction and valance band in an insulator is (Low Very low High Moderate) 5. Operating point of a transistor must be independent of (Biasing Amplification Variations in parameters Filtration) 6. When a transistor operating at the central of the load line is declining, the current gain will change the Q-point (down up nowhere of the load line) 7. A bipolar junction transistor when used as a switch, operates in (cut-off and active region active and saturation region cut-off and saturation region all of these) 8. Inversion layer in an MOS…

Dive into the fabrication process of microchips. What are the key steps involved, and how are transistors created on a silicon wafer?

Design rectifier circuits to provide an output of 100 Vpc using a) HWR and b) Center-tapped FWR circuits. For each circuit, calculate the diode PIV ratings and the transformer turns ratio (secondary to primary), if power is taken from the 220 V line AC supply.