Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 13, Problem 13.12P
To determine
The value of
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Question
What must be the minimum power rating for the external pass transistor used with a 7815
regulator in a circuit such as that shown in Figure below? The input voltage is 30 V and the
load resistance is 10 N. The maximum internal current is to be 700 mA.
Assume that there is no heat sink for this calculation. Keep in mind that the use of a heat
sink increases the effective power rating of the transistor and you can use a lower rated
transistor.
Qext
VIN
Rext
VOUT
C
7815
- RL
Chapter 13 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 13 - Prob. 13.1EPCh. 13 - Prob. 13.2EPCh. 13 - Prob. 13.4EPCh. 13 - Repeat Example 13.5 assuming Early voltages of...Ch. 13 - Prob. 13.6EPCh. 13 - Prob. 13.3TYUCh. 13 - Prob. 13.4TYUCh. 13 - Prob. 13.5TYUCh. 13 - Prob. 13.6TYUCh. 13 - Prob. 13.8EP
Ch. 13 - Prob. 13.11EPCh. 13 - Prob. 13.10TYUCh. 13 - Prob. 13.12TYUCh. 13 - Prob. 13.12EPCh. 13 - Prob. 13.13EPCh. 13 - Prob. 13.15EPCh. 13 - Prob. 13.15TYUCh. 13 - Consider the LF155 BiFET input stage in Figure...Ch. 13 - Describe the principal stages of a generalpurpose...Ch. 13 - Prob. 2RQCh. 13 - Prob. 3RQCh. 13 - Describe the operation and characteristics of a...Ch. 13 - Describe the configuration and operation of the...Ch. 13 - What is the purpose of the resistorin the active...Ch. 13 - Prob. 7RQCh. 13 - Prob. 8RQCh. 13 - Describe the frequency compensation technique in...Ch. 13 - Sketch and describe the general characteristics of...Ch. 13 - Prob. 11RQCh. 13 - Sketch and describe the principal advantage of a...Ch. 13 - Prob. 13RQCh. 13 - What are the principal factors limiting the...Ch. 13 - Consider the simple MOS opamp circuit shown in...Ch. 13 - Prob. 13.2PCh. 13 - Prob. 13.5PCh. 13 - Consider the input stage of the 741 opamp in...Ch. 13 - Prob. 13.7PCh. 13 - Prob. 13.8PCh. 13 - Prob. 13.10PCh. 13 - The minimum recommended supply voltages for the...Ch. 13 - Prob. 13.12PCh. 13 - Consider the 741 opamp in Figure 13.3, biased with...Ch. 13 - Prob. 13.14PCh. 13 - Consider the output stage of the 741 opamp shown...Ch. 13 - Prob. 13.16PCh. 13 - Prob. 13.19PCh. 13 - Prob. 13.20PCh. 13 - Prob. 13.21PCh. 13 - Prob. 13.22PCh. 13 - Prob. 13.23PCh. 13 - Prob. 13.24PCh. 13 - (a) Determine the differential input resistance of...Ch. 13 - An opamp that is internally compensated by Miller...Ch. 13 - The CMOS opamp in Figure 13.14 is biased at V+=5V...Ch. 13 - Prob. 13.34PCh. 13 - Consider the MC14573 opamp in Figure 13.14, with...Ch. 13 - Prob. 13.36PCh. 13 - Prob. 13.37PCh. 13 - Prob. 13.39PCh. 13 - Prob. 13.41PCh. 13 - In the bias portion of the CA1340 opamp in Figure...Ch. 13 - Prob. 13.57PCh. 13 - In the LF155 BiFET opamp in Figure 13.25, the...
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- QUESTION 1 By referring to Figure Q1, determine: a) The Q-point values of Ic and VCE. b) Draw the DC load line and plot the Q-point based on answer from Q1(a). c) The diode emitter resistance, re and draw re transistor model (AC equivalent circuu). d) The input impedance, Zi as seen from the input voltage. e) The output impedance, Z, as seen from output. f) The voltage gain, Av and the current gain, A¡.arrow_forwardQ23 For the circuit shown in Figure B23, a 0.96. calculate the following: Collector current (Ic) Collector-Base voltage (VCB) iii. Emitter Current (Ig) iv. Base Current (IB) Ic 2 2.5 kQ Output 4V 1B 14V Ncc EEarrow_forwardWhat must be the minimum power rating for the external pass transistor used with a 7815 regulator in a circuit such as that shown in Figure below? The input voltage is 30 V and the load resistance is 10 n. The maximum internal current is to be 700 mA Assume that there is no heat sink for this calculation. Keep in mind that the use of a heat sink increases the effective power rating of the transistor and you can use a lower rated transistor. Qeu VIN Re VOUT 7815arrow_forward
- An NPN silicon transistor having a nominal ß of 100 is to be used in a CE configuration with Vcc= 15 V. The Q point is to be Ic = 4mA and VcE = 12V . Now design the circuit diagram.arrow_forwardDraw and explain the schematic diagram for the following: Common Base NPN operating in cut-off region Common Emitter PNP operating in the active region Common Collector NPN operating saturation region From the given figure, identify and explain the 1.Type of Transistor 2. Type of Configuration 3. Mode of Operation V3 SV Q2 100A/A Q3 100A/A 7 V4 5V V6 5Varrow_forwardQ2: A transistor dissipates 50W in an ambient temperature of 60°C, the thermal resistances are 0-0.5 °CW¹, 8ca-4 °CW'. Determine the junction temperature without a heat sink. Determine the thermal resistance of the heat sink to avoid the junction temperature exceeding 180°C. 3arrow_forward
- c. For the circuit shown in Figure, determine lc and VCB. Assume the transistor to be made of Silicon. Ic RE=1.6 kn Rc=1.1 kn EE=8 V Vcc= 20 varrow_forward14arrow_forwardExample 13 The maximum drain current for the 2N4351 n-channel enhancement-type MOSFET is 30 mA. Determine VGs at this current level if k = 0.06 × 10-3 A/V² and VȚ is the maxi- mum value.arrow_forward
- 3. Write down which transistor structure each curve characteristic belongs to in the figure. Ip -VGS -VGS +VGs (c) VGS (b) (a)arrow_forwardFor the circuit shown in Figure B23, a = 0.94, calculate the following: i. Collector current (Ic) ii. Collector-Base voltage (VCB) ii. Emitter Current (Ie) iv. Base Current (IB) Ic IE 2.5 kN Ouiput 3.5V IB 12V VEE Vccarrow_forwardP5arrow_forward
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