Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
expand_more
expand_more
format_list_bulleted
Question
Chapter 13, Problem 13.12EP
a.
To determine
The value of the current I1and I2and the voltages VSG8, VC7, VC6, VCB7, and VBC6.
b.
To determine
The minimum supply voltages which still maintain the bipolar transistors biased in the forward active region.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
. Design a fixed bias-transistor circuit using V = Vcc = 10 V for a Q-point of Iç = 5 mA and Va 4 V.
Assume Boc = 100.The design involves finding R, and Rc.
inakomeont thot one is hiased
Q.
Choose the correct answer from the following:
2. A three-phase half-wave controlled
converter is constructed using 3 SCR devices.
The circuit is supplying an R load with a<
30°. As such, each SCR device would conduct
for
a) 60° each cycle
b) 120° each cycle
c) 180° each cycle
d) 360° each cycle
4. A thyristor has a maximum allowable
junction temperature of 120°C and the
ambient temperature is 40°C. If thermal
resistance is 1.6° C/W, the maximum
allowable internal power dissipation is:
a. 20 W
b. 50 W
c. 92 W
d. 128 W
6. In reverse blocking state of a thyristor:
a) junction J2 is in reverse bias and J1, J3
is in forward bias.
b) junction J3 is in forward bias and J1, J2
in reverse bias.
c) junction J1, J3 is in reverse bias and J2
is in forward bias.
d) junction J1 and J2 is in forward bias and
J3 is in reverse bias.
A base bias method is used in the following circuit. For Bpc - 300, the value of emitter current is:
-Vc.
+15 V
Rc
1.8 k2
RB
560 k2
7.82 mA
O 6.84 mA
O 7.27 mA
Chapter 13 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 13 - Prob. 13.1EPCh. 13 - Prob. 13.2EPCh. 13 - Prob. 13.4EPCh. 13 - Repeat Example 13.5 assuming Early voltages of...Ch. 13 - Prob. 13.6EPCh. 13 - Prob. 13.3TYUCh. 13 - Prob. 13.4TYUCh. 13 - Prob. 13.5TYUCh. 13 - Prob. 13.6TYUCh. 13 - Prob. 13.8EP
Ch. 13 - Prob. 13.11EPCh. 13 - Prob. 13.10TYUCh. 13 - Prob. 13.12TYUCh. 13 - Prob. 13.12EPCh. 13 - Prob. 13.13EPCh. 13 - Prob. 13.15EPCh. 13 - Prob. 13.15TYUCh. 13 - Consider the LF155 BiFET input stage in Figure...Ch. 13 - Describe the principal stages of a generalpurpose...Ch. 13 - Prob. 2RQCh. 13 - Prob. 3RQCh. 13 - Describe the operation and characteristics of a...Ch. 13 - Describe the configuration and operation of the...Ch. 13 - What is the purpose of the resistorin the active...Ch. 13 - Prob. 7RQCh. 13 - Prob. 8RQCh. 13 - Describe the frequency compensation technique in...Ch. 13 - Sketch and describe the general characteristics of...Ch. 13 - Prob. 11RQCh. 13 - Sketch and describe the principal advantage of a...Ch. 13 - Prob. 13RQCh. 13 - What are the principal factors limiting the...Ch. 13 - Consider the simple MOS opamp circuit shown in...Ch. 13 - Prob. 13.2PCh. 13 - Prob. 13.5PCh. 13 - Consider the input stage of the 741 opamp in...Ch. 13 - Prob. 13.7PCh. 13 - Prob. 13.8PCh. 13 - Prob. 13.10PCh. 13 - The minimum recommended supply voltages for the...Ch. 13 - Prob. 13.12PCh. 13 - Consider the 741 opamp in Figure 13.3, biased with...Ch. 13 - Prob. 13.14PCh. 13 - Consider the output stage of the 741 opamp shown...Ch. 13 - Prob. 13.16PCh. 13 - Prob. 13.19PCh. 13 - Prob. 13.20PCh. 13 - Prob. 13.21PCh. 13 - Prob. 13.22PCh. 13 - Prob. 13.23PCh. 13 - Prob. 13.24PCh. 13 - (a) Determine the differential input resistance of...Ch. 13 - An opamp that is internally compensated by Miller...Ch. 13 - The CMOS opamp in Figure 13.14 is biased at V+=5V...Ch. 13 - Prob. 13.34PCh. 13 - Consider the MC14573 opamp in Figure 13.14, with...Ch. 13 - Prob. 13.36PCh. 13 - Prob. 13.37PCh. 13 - Prob. 13.39PCh. 13 - Prob. 13.41PCh. 13 - In the bias portion of the CA1340 opamp in Figure...Ch. 13 - Prob. 13.57PCh. 13 - In the LF155 BiFET opamp in Figure 13.25, the...
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- If the circuit shown in Figure #1 had a 10 kΩ resistor connected as a load resistor, RL and an input signal is applied to the base of the transistor through the coupling capacitor C1, with an amplitude of 22 mVpp at a frequency of 1 kHz. Determine the new voltage gain AV and the output voltage VOUT. Is the output signal clipped?arrow_forwardFind the operating region of the MOSFET and Vn when In = 0.2A and R=5 ohm? +1.8 V R o Vp O a. None- off the options O b. Cut-off, Vp = 0.8V O c. Triode, Vp = 0.6V O d. Saturation, Vp = 0.8Varrow_forwardQ3) For the regulator circuit shown in figure below, Vin-15 V, Rs-10 2, Vz-9.1 V, VBE=0.8V, and R=40 2. What are the values of output voltage, input current, the load current, and collector current. 102016 2-8594 Vin R$ Ⓡ R₂ Voutarrow_forward
- From the figure shown, when S1 is at 1 : up position; the following statement is not correct except: (a) Collector-emitter voltage of Q1 is approximately zero (b) the LED will illuminate (c) the base voltage of Q2 is equal to 9 V (d) (b) and (c)arrow_forwardFrom the circuit below, determine the output peak voltage Vm ? Np:Ns 6:1 Vp 120 Vac out 60 Hz DA R = 200 2 O Ovpeak O 169.71Vpeak O 28.28Vpeak O 1018.23Vpeakarrow_forwardRe £ Value ZRB 꿀 Consider the transis BE=0.70 The Circuit has the Cirsuit Shown. Let B = 150 Cirbuit shown. and assume that shown .RB below PIRE Rc 47 ки base Current, IB Collector Current, I Mortage 74702 Is V 1201002 the Determine 3. Determine the Determine the Cmitter Vee Determine the value of RB that sets Vce = 0.3 V 2.3 between the Collector andarrow_forward
- 5V B OV OV For all the MOSFETS assume Vth=1V and k =50 mA/V² R₁ = 4700 Ao M₁ M₂ B Indicate and verify the state of each MOSFET and Vo for the following input combinations. Fill out the table for each assumed state of the MOSFET for every input combination. Use Rds(on) approximation for linear operation and three significant figures for the voltages. M1 is assumed to be in saturation. If Vgs = 2 V, Vds = 4V, Vds > Vgs - Vth 4>2-1 4> 1 (ok) Vgs > Vth (2>1) A M2 state M3 state V. 0 OV 5 V R₂ = 560Ω 5V M1 state M3arrow_forwardThe operating point of the npn transistor is defined by a couple of values: Icand Ver- Select one: OTrue O False In the following figure. Q, and Q: are identicaland operate in active mode. if la =9 Icz then V,V2 ICarrow_forwardProblem5: For the common base circuit shown in figure find L and Vca. Assume transistor is Silicon.(a=0.98) IE Ic RE= 1.5 kQ Rc= 1.2 k VEE =8 V Vcc= 18 Varrow_forward
- H. W. of Lecture L(7-2)C 1. Determine whether or not the transistor in figure above is saturated for the following values: Boc = 125, VBB = 1.5 v, Re = 6.8 kO, Rc = 150 Q and Vcc = 12 V. Rc1.0 kll R Vcc 10 V Bpc=50 10 ks2 VBB 3 V 2. What value of Rc in the figure above will it take to have a voltage gain of 50? Rc 1.0 kn RB Gut Vcc- V, 100 mVarrow_forwardc. For the circuit shown in Figure, determine lc and VCB. Assume the transistor to be made of Silicon. Ic RE=1.6 kn Rc=1.1 kn EE=8 V Vcc= 20 varrow_forwardEHide bla This course Determine Vx and the mode of operation of the PNP transistor shown in the figure below. Assume Is = 2.5x106 A,B- 50, VA =, and Rc = 0.1 KO. Vec 2 V EX 1.2 V- Re幸 Select one: O a.1.153 V. Active Mode O60577V. Active Mode Oc 023 V. Active Mode d. None of these Oe 2306 V Saturation Mode For the circuit shewn in the figure below. assume l = 3 107A V= 26mv. B= 100, and V = The value of r-5arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSONDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage LearningProgrammable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
- Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill EducationElectric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSONEngineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,
CMOS Tech: NMOS and PMOS Transistors in CMOS Inverter (3-D View); Author: G Chang;https://www.youtube.com/watch?v=oSrUsM0hoPs;License: Standard Youtube License