Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 13, Problem 2RQ
To determine
Meaning of term matched transistor and what parameter in BJT and MOSFET are identical in matched transistor.
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In simulating JFET characteristic curves, what DC voltage supply do you need to adjust to see the transistor’s breakdown region? How should you adjust it?
a) Differentiate between JFET and MOSFET transconductance curves.
b) What is main difference between BJT and field effect transistors? Define and explain threshold voltage and pinch off voltage
2. What are the similarities and differences between BJTs and MOSFTs? Why MOSFETs are more commonly used in integrated circuits than other types of transistors?
Chapter 13 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 13 - Prob. 13.1EPCh. 13 - Prob. 13.2EPCh. 13 - Prob. 13.4EPCh. 13 - Repeat Example 13.5 assuming Early voltages of...Ch. 13 - Prob. 13.6EPCh. 13 - Prob. 13.3TYUCh. 13 - Prob. 13.4TYUCh. 13 - Prob. 13.5TYUCh. 13 - Prob. 13.6TYUCh. 13 - Prob. 13.8EP
Ch. 13 - Prob. 13.11EPCh. 13 - Prob. 13.10TYUCh. 13 - Prob. 13.12TYUCh. 13 - Prob. 13.12EPCh. 13 - Prob. 13.13EPCh. 13 - Prob. 13.15EPCh. 13 - Prob. 13.15TYUCh. 13 - Consider the LF155 BiFET input stage in Figure...Ch. 13 - Describe the principal stages of a generalpurpose...Ch. 13 - Prob. 2RQCh. 13 - Prob. 3RQCh. 13 - Describe the operation and characteristics of a...Ch. 13 - Describe the configuration and operation of the...Ch. 13 - What is the purpose of the resistorin the active...Ch. 13 - Prob. 7RQCh. 13 - Prob. 8RQCh. 13 - Describe the frequency compensation technique in...Ch. 13 - Sketch and describe the general characteristics of...Ch. 13 - Prob. 11RQCh. 13 - Sketch and describe the principal advantage of a...Ch. 13 - Prob. 13RQCh. 13 - What are the principal factors limiting the...Ch. 13 - Consider the simple MOS opamp circuit shown in...Ch. 13 - Prob. 13.2PCh. 13 - Prob. 13.5PCh. 13 - Consider the input stage of the 741 opamp in...Ch. 13 - Prob. 13.7PCh. 13 - Prob. 13.8PCh. 13 - Prob. 13.10PCh. 13 - The minimum recommended supply voltages for the...Ch. 13 - Prob. 13.12PCh. 13 - Consider the 741 opamp in Figure 13.3, biased with...Ch. 13 - Prob. 13.14PCh. 13 - Consider the output stage of the 741 opamp shown...Ch. 13 - Prob. 13.16PCh. 13 - Prob. 13.19PCh. 13 - Prob. 13.20PCh. 13 - Prob. 13.21PCh. 13 - Prob. 13.22PCh. 13 - Prob. 13.23PCh. 13 - Prob. 13.24PCh. 13 - (a) Determine the differential input resistance of...Ch. 13 - An opamp that is internally compensated by Miller...Ch. 13 - The CMOS opamp in Figure 13.14 is biased at V+=5V...Ch. 13 - Prob. 13.34PCh. 13 - Consider the MC14573 opamp in Figure 13.14, with...Ch. 13 - Prob. 13.36PCh. 13 - Prob. 13.37PCh. 13 - Prob. 13.39PCh. 13 - Prob. 13.41PCh. 13 - In the bias portion of the CA1340 opamp in Figure...Ch. 13 - Prob. 13.57PCh. 13 - In the LF155 BiFET opamp in Figure 13.25, the...
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- What is the relation between dc base current and dc collector current in a BJT?arrow_forwardWhat is main difference between BJT and field effect transistors? Define and explain threshold voltage and pinch off voltage?arrow_forward(a)(i) State three differences between the Field Effect Transistor (FET) and the Bipolar JunctionTransistor (BJT). (ii) Draw the physical structure and device symbol for an n-channel JFET. (iii) What is meant by drain characteristics (b) Determine the drain current of an n-channel JFET having pinch-off voltage VP = - 4 and drain-source saturation current IDSS=12mA at the following gate-source voltages(i) VGS= 0V(ii) VGS= -2V (c) Calculate the transconductance, gm of a JFET having specified values of IDSS=12mA and VP= - 4V at bias points(i) VGS= 0V and(ii) VGS= -1.5V.arrow_forward
- i ol jBsl jljS - voltage gain of an emitter-follower configuration of BJT transistor is approximately one voltage gain of an emitter- follower configuration of BJT transistor is approximately one. where it is used?arrow_forwardConclusion: Questions: [1] How to check transistor with help of multimeter? [2] How to check type of transistor (NPN or PNP) with help of multimeter? [3] Define current gain of the transistor in CE configuration. What is the DC current gain you obtain in this practical?arrow_forwardQuestion 2 Referring to Figure 2 and the following BJT parameters: B = 100, thermal voltage = 25 mV and VBE = 0.7 V. a. Calculate the DC operating point of the BJT which are the collector current, Iç and base-emitter voltage, VCE. b. Draw the low-frequency small-signal equivalent circuit for Figure 2. Vcc 10V Re $4.7 ka R 47 ko3 HS vo B=100 Vthermar=25mv R. 10 Κl R $ikn T10UF GND Figure 2arrow_forward
- The primary difference between BJT and FET types of transistor is; a.FET is voltage controlled and BJT is current controlled b.BJTs amplify better than FETs c.BJT is voltage controlled and FET is current controlled d.None of the abovearrow_forward1.)Draw the diagram /circuit equivalent of 4 transistor Q1, Q2, Q3 & Q4. Connect it to form A.) Diac circuit B.) Triac circuitarrow_forward3. Does the experimental data indicate that Bac is constant at all points? Does this have any effect on the linearity of the Transistor? What effect would a higher Bac have on the characteristic curves you measured? Erom out horeotoriatio findarrow_forward
- Describe the operation of unijunction transistor (UJT). Explain how the equivalent circuit of UJT can be realised. Use appropriate diagrams in the answer.arrow_forward5. For a BJt Vt is 5 V, Re = 1200 ohm and bias current le is 15 mA. What is the voltage gain ?arrow_forwardWhat is Quiescent? What does it mean a transistor in saturation?arrow_forward
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