Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
expand_more
expand_more
format_list_bulleted
Question
Chapter 13, Problem 13.3TYU
To determine
The value of input base current to
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
Q23
For the circuit shown in Figure B23, a 0.96.
calculate the following:
Collector current (Ic)
Collector-Base voltage (VCB)
iii.
Emitter Current (Ig)
iv.
Base Current (IB)
Ic
2
2.5 kQ
Output
4V
1B
14V
Ncc
EE
Qa: A transistor dissipates 50W in an ambient temperature of 60°C, the thermal resistances
are 0-0.5 °CW¹, 8ca-4 °CW. Determine the junction temperature without a heat
sink. Determine the thermal resistance of the heat sink to avoid the junction
temperature exceeding 180°C.
)
Ip
B. Multiple choice questions
1. The characteristic of the voltage drop in on-state shown at right applies to:
a) Thyristor (SCR)
b) IGBT
c) Diode
d) MOSFET
VDs= RDs.Ips
2. The structure shown at right is a structure of:
DO N
a) MOSFET
b) Thyristor (SCR)
c) BJT
d) Diode
VDS
P-type
substrate
GO
so N
Chapter 13 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 13 - Prob. 13.1EPCh. 13 - Prob. 13.2EPCh. 13 - Prob. 13.4EPCh. 13 - Repeat Example 13.5 assuming Early voltages of...Ch. 13 - Prob. 13.6EPCh. 13 - Prob. 13.3TYUCh. 13 - Prob. 13.4TYUCh. 13 - Prob. 13.5TYUCh. 13 - Prob. 13.6TYUCh. 13 - Prob. 13.8EP
Ch. 13 - Prob. 13.11EPCh. 13 - Prob. 13.10TYUCh. 13 - Prob. 13.12TYUCh. 13 - Prob. 13.12EPCh. 13 - Prob. 13.13EPCh. 13 - Prob. 13.15EPCh. 13 - Prob. 13.15TYUCh. 13 - Consider the LF155 BiFET input stage in Figure...Ch. 13 - Describe the principal stages of a generalpurpose...Ch. 13 - Prob. 2RQCh. 13 - Prob. 3RQCh. 13 - Describe the operation and characteristics of a...Ch. 13 - Describe the configuration and operation of the...Ch. 13 - What is the purpose of the resistorin the active...Ch. 13 - Prob. 7RQCh. 13 - Prob. 8RQCh. 13 - Describe the frequency compensation technique in...Ch. 13 - Sketch and describe the general characteristics of...Ch. 13 - Prob. 11RQCh. 13 - Sketch and describe the principal advantage of a...Ch. 13 - Prob. 13RQCh. 13 - What are the principal factors limiting the...Ch. 13 - Consider the simple MOS opamp circuit shown in...Ch. 13 - Prob. 13.2PCh. 13 - Prob. 13.5PCh. 13 - Consider the input stage of the 741 opamp in...Ch. 13 - Prob. 13.7PCh. 13 - Prob. 13.8PCh. 13 - Prob. 13.10PCh. 13 - The minimum recommended supply voltages for the...Ch. 13 - Prob. 13.12PCh. 13 - Consider the 741 opamp in Figure 13.3, biased with...Ch. 13 - Prob. 13.14PCh. 13 - Consider the output stage of the 741 opamp shown...Ch. 13 - Prob. 13.16PCh. 13 - Prob. 13.19PCh. 13 - Prob. 13.20PCh. 13 - Prob. 13.21PCh. 13 - Prob. 13.22PCh. 13 - Prob. 13.23PCh. 13 - Prob. 13.24PCh. 13 - (a) Determine the differential input resistance of...Ch. 13 - An opamp that is internally compensated by Miller...Ch. 13 - The CMOS opamp in Figure 13.14 is biased at V+=5V...Ch. 13 - Prob. 13.34PCh. 13 - Consider the MC14573 opamp in Figure 13.14, with...Ch. 13 - Prob. 13.36PCh. 13 - Prob. 13.37PCh. 13 - Prob. 13.39PCh. 13 - Prob. 13.41PCh. 13 - In the bias portion of the CA1340 opamp in Figure...Ch. 13 - Prob. 13.57PCh. 13 - In the LF155 BiFET opamp in Figure 13.25, the...
Knowledge Booster
Similar questions
- Instruction/s: Draw, Illustrate and label your schematic diagram before solving the problem. 1.) Given a Fixed-Biased transistor circuit with Beta DC is 200 , voltage at common collector is +22v ,base supply voltage is +11V, Base resistor is 47kOhms , collector resistor is 390 ohms ,Voltage at Base-emitter junction is 0.7v. Determine the Q-point of collector current and Voltage at collector-emitter junction. These is the example or guide that might help in answering the problem.arrow_forwardExample 13 The maximum drain current for the 2N4351 n-channel enhancement-type MOSFET is 30 mA. Determine VGs at this current level if k = 0.06 × 10-3 A/V² and VȚ is the maxi- mum value.arrow_forwardQues 4: Draw the structure of an N-channel JFET and also explain the drain characteristicsarrow_forward
- The arrow on the symbol of MOSFET indicates O a. that it is a N-channel MOSFET O b. that it is a P-channel MOSFET Oc. the direction of electrons O d. the direction of conventional current flowarrow_forwardPart of the data sheet of the 2N5457 model JFET transistor is provided in your question paper. Answer the following using this data sheet i. Find the Ip (drain current) value for VGs = 0 V. (VGs (off) = - 3.5V) ii. Find the Ip (drain current) value for VGs = -2 V. (VGs (ofM= - 3.5V) iii. Calculate the values of Vps and VGs in the circuit given in the figure. Use the minimum values given in the data sheet. VDD +12 V Rp 10 kf 2N5457 Rs 5.6 kfarrow_forwardAt high levels of gate current, the characteristics of an SCR approach those of what semiconductor device? a. MOSFET b. BJT c. JFET d. Diodearrow_forward
- Example 1) Determine the Q-point, and find the maximum peak value of base current for linear operation. Assume Boc = 200. I BQ. Ico, Iea vee, VBEO, VCB Q Rc 3302 RB Vcc VCE 20V 47KQ VBB 10Varrow_forwardDetermine the collector-to-base voltage.arrow_forwardThe output will be a LOW for any case when one or more inputs are zero in a/an ………… OR NAND. AND. NORarrow_forward
- Assume R1= R2 =D6002, RL=500, and Vcc = 15V. Assuming D1 and D2 are identical and have same characteristics as Q1 and Q2 base-emitter junctions, if the input voltage is 1Vrms, what will be the output peak voltage? Vcc R1 D1 D2 Q2 R2 R2 -Vccarrow_forwardA Bipolar junction Transistor with curreat amplification factor being 100, Input Base current is 50μA. Collector voltage is 10 V and biasing voltage being +20 V. Find followings a. Collector current b. Resistance (R1) c. Collector voltage , Emitter voltage , Base Voltage & Collector-Emitter Voltage.arrow_forwardFor the circuit shown in Figure B23, a = 0.98, calculate the following: i. Collector current (Ic) ii. Collector-Base voltage (VCB) ii. Emitter Current (IE) iv. Base Current (IB) IE 2.5 k Ouput 4.5V IB Vcc Figure B23 Type here to searcharrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSON
Delmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage Learning
Programmable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill Education
Electric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSON
Engineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,