Foundations of Materials Science and Engineering
Foundations of Materials Science and Engineering
6th Edition
ISBN: 9781259696558
Author: SMITH
Publisher: MCG
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Chapter 5.7, Problem 22AAP

If boron is diffused into a thick slice of silicon with no previous boron in it at a temperature of 1100°C for 5 h, what is the depth below the surface at which the concentration is 1017 atoms/cm3 if the surface concentration is 1018 atoms/cm3? D = 4 × 10−13 cm2/s for boron diffusing in silicon at 1100°C.

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Problem 3. Phosphorus is diffused into a thick slice of silicon with no previous phosphorus in it at a temperature of 1100°C. If the surface concentration of the phosphorus is 1 × 1018 atoms/cm³ and its concentration at 1 um is 1 × 1015 atoms/cm, how long must be the diffusion time? D = 3.0 x 10-13 cm²/s for P diffusing in Si at 1100°C.
In order to produce a certain semiconductor, a process called doping is performed in which phosphorus is diffused into germanium. If D0 = 2.0 x 10-4 m2/s and the activation energy is 240.6 J/mol, determine the diffusivity of P in Ge at 800°C.
Copper at 500 °C has 1.10×1015 vacancies/cm³. The atomic weight of Cu is 63.55 g/mol and the density at this temperature is 8.96 g/cm³. Avogadro constant NA ~ 6.022×1023 atoms/mol. Boltzmann constant (K) - 8.62×10-³ ev/atom • K. (a) What is the activation energy required to create a vacancy in Cu? (b) Cu is then cooled to 400 °C. What will be the number of vacancies per cubic centimeter? Assume that the change in the density in the cooling is negligible.

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