Chapter 3, Problem 3.4TYU

The PMOS devices described in Exercise TYU 3.3 have parameters $W=10\mu \text{m}$ , $L=0.8\mu \text{m}$ , $t_{\text{ox}}=200\text{Å}$ , ${\mu }_p=300{\text{cm}}^{\text{2}}\text{/V}-\text{s}$ ,and $\lambda \text{=0}$ . (a) Calculate the conduction parameter $K_p$ for each device. (b) Calculate the drain current for each bias condition listed in Exercise TYU 3.3. (Ans. (a) $K_p=0.324{\text{mA/V}}^{\text{2}}$ ; (b) $i_D=0.156\text{mA,0}\text{.207}\text{mA}$ ; and 0.207 mA; $i_D=0.778\text{mA,1}\text{.75}\text{mA}$ , and 3.32 mA)