MOS transistors with very short channels do not exhibit the square law voltage relation in saturation. The drain current is instead given by
where
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Microelectronics: Circuit Analysis and Design
- Derive the formula for the depletion width W of a pn junction. Also derive the equations for xn and xp.arrow_forwardTrue/False Forward biasing a pn junction causes the depletion region to narrow. T/F Doping silicon with antimony (Sb) yields a p-type material. T/F As junction temperature increases, built-in potential decreases. T/F An insulator has a lower bandgap energy than a semiconductor. T/F Holes are the majority carriers in p-type material. T/Farrow_forwardTrue or false a.A p-n junction has a variable capacitance depending on bias. b.n a depletion mode MOSFET the channel is created by implantation of ions not gate bias. c.Diffusion capacitance is zero if the diode length is longer than the diffusion length. d.We can accurately predict the energy and time of an electron. e.. Avalanche breakdown occurs if the potential barrier is narrow, allowing for tunneling of carriers f.For an Schottky contact there is a higher concentration of majority carriers at the interface g.Current can flow between source and drain with a gate bias, VG=0 in an enhancement modeMOSFET. h.To achieve forward active mode in an NPN bipolar junction transistor, the base-emitter voltage must be forward biased and the base-collector voltage must be reverse biased to ensure that electrons from the emitter make it to the collector. i.The Early Effect causes a decrease in IC with increased VC as the depletion region from the collector extends significantly into the basearrow_forward
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