Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Question
Chapter 3, Problem 14RQ
To determine
To explain: The difference between a MESFET and pn junction FET.
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Chapter 3 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 3 - An NMOS transistor with VTN=1V has a drain current...Ch. 3 - An PMOS device with VTP=1.2V has a drain current...Ch. 3 - (a) An nchannel enhancementmode MOSFET has a...Ch. 3 - The NMOS devices described in Exercise TYU 3.1...Ch. 3 - (a) A pchannel enhancementmode MOSFET has a...Ch. 3 - The PMOS devices described in Exercise TYU 3.3...Ch. 3 - The parameters of an NMOS enhancementmode device...Ch. 3 - An NMOS transistor has parameters VTNO=0.4V ,...Ch. 3 - Prob. 3.3EPCh. 3 - The transistor in Figure 3.26(a) has parameters...
Ch. 3 - For the transistor in the circuit in Figure 3.28,...Ch. 3 - Consider the circuit shown in Figure 3.30. The...Ch. 3 - Consider the circuit in Figure 3.30. Using the...Ch. 3 - (a) Consider the circuit shown in Figure 3.33. The...Ch. 3 - Consider the NMOS inverter shown in Figure 3.36...Ch. 3 - Consider the circuit shown in Figure 3.39 with...Ch. 3 - Consider the circuit in Figure 3.41. Assume the...Ch. 3 - Prob. 3.7TYUCh. 3 - Consider the circuit in Figure 3.43. The...Ch. 3 - For the circuit shown in Figure 3.36, use the...Ch. 3 - Consider the circuit shown in Figure 3.44. The...Ch. 3 - For the circuit shown in Figure 3.39, use the...Ch. 3 - For the MOS inverter circuit shown in Figure 3.45,...Ch. 3 - For the circuit in Figure 3.46, assume the circuit...Ch. 3 - The circuit shown in Figure 3.45 is biased at...Ch. 3 - The transistor in the circuit shown in Figure 3.48...Ch. 3 - In the circuit in Figure 3.46, let RD=25k and...Ch. 3 - For the circuit shown in Figure 3.49(a), assume...Ch. 3 - Prob. 3.15EPCh. 3 - Consider the constantcurrent source shown in...Ch. 3 - Consider the circuit in Figure 3.49(b). Assume...Ch. 3 - Consider the circuit shown in Figure 3.50. Assume...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The parameters of an nchannel JFET are IDSS=12mA ,...Ch. 3 - The transistor in the circuit in Figure 3.62 has...Ch. 3 - For the pchannel transistor in the circuit in...Ch. 3 - Consider the circuit shown in Figure 3.66 with...Ch. 3 - The nchannel enhancementmode MESFET in the circuit...Ch. 3 - For the inverter circuit shown in Figure 3.68, the...Ch. 3 - Describe the basic structure and operation of a...Ch. 3 - Sketch the general currentvoltage characteristics...Ch. 3 - Describe what is meant by threshold voltage,...Ch. 3 - Describe the channel length modulation effect and...Ch. 3 - Describe a simple commonsource MOSFET circuit with...Ch. 3 - Prob. 6RQCh. 3 - In the dc analysis of some MOSFET circuits,...Ch. 3 - Prob. 8RQCh. 3 - Describe the currentvoltage relation of an...Ch. 3 - Describe the currentvoltage relation of an...Ch. 3 - Prob. 11RQCh. 3 - Describe how a MOSFET can be used to amplify a...Ch. 3 - Describe the basic operation of a junction FET.Ch. 3 - Prob. 14RQCh. 3 - (a) Calculate the drain current in an NMOS...Ch. 3 - The current in an NMOS transistor is 0.5 mA when...Ch. 3 - The transistor characteristics iD versus VDS for...Ch. 3 - For an nchannel depletionmode MOSFET, the...Ch. 3 - Verify the results of Example 3.4 with a PSpice...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - Consider an nchannel depletionmode MOSFET with...Ch. 3 - Determine the value of the process conduction...Ch. 3 - An nchannel enhancementmode MOSFET has parameters...Ch. 3 - Consider the NMOS circuit shown in Figure 3.36....Ch. 3 - An NMOS device has parameters VTN=0.8V , L=0.8m ,...Ch. 3 - Consider the NMOS circuit shown in Figure 3.39....Ch. 3 - A particular NMOS device has parameters VTN=0.6V ,...Ch. 3 - MOS transistors with very short channels do not...Ch. 3 - For a pchannel enhancementmode MOSFET, kp=50A/V2 ....Ch. 3 - For a pchannel enhancementmode MOSFET, the...Ch. 3 - The transistor characteristics iD versus SD for a...Ch. 3 - A pchannel depletionmode MOSFET has parameters...Ch. 3 - Calculate the drain current in a PMOS transistor...Ch. 3 - sDetermine the value of the process conduction...Ch. 3 - Enhancementmode NMOS and PMOS devices both have...Ch. 3 - For an NMOS enhancementmode transistor, the...Ch. 3 - The parameters of an nchannel enhancementmode...Ch. 3 - An enhancementmode NMOS transistor has parameters...Ch. 3 - An NMOS transistor has parameters VTO=0.75V ,...Ch. 3 - (a) A silicon dioxide gate insulator of an MOS...Ch. 3 - In a power MOS transistor, the maximum applied...Ch. 3 - In the circuit in Figure P3.26, the transistor...Ch. 3 - The transistor in the circuit in Figure P3.27 has...Ch. 3 - Prob. D3.28PCh. 3 - The transistor in the circuit in Figure P3.29 has...Ch. 3 - Consider the circuit in Figure P3.30. The...Ch. 3 - For the circuit in Figure P3.31, the transistor...Ch. 3 - Design a MOSFET circuit in the configuration shown...Ch. 3 - Consider the circuit shown in Figure P3.33. The...Ch. 3 - The transistor parameters for the transistor in...Ch. 3 - For the transistor in the circuit in Figure P3.35,...Ch. 3 - Design a MOSFET circuit with the configuration...Ch. 3 - The parameters of the transistors in Figures P3.37...Ch. 3 - For the circuit in Figure P3.38, the transistor...Ch. 3 - Prob. 3.39PCh. 3 - Prob. 3.40PCh. 3 - Design the circuit in Figure P3.41 so that...Ch. 3 - Prob. 3.42PCh. 3 - Prob. 3.43PCh. 3 - Prob. 3.44PCh. 3 - Prob. 3.45PCh. 3 - Prob. 3.46PCh. 3 - Prob. 3.47PCh. 3 - The transistors in the circuit in Figure 3.36 in...Ch. 3 - For the circuit in Figure 3.39 in the text, the...Ch. 3 - Prob. 3.50PCh. 3 - The transistor in the circuit in Figure P3.51 is...Ch. 3 - Prob. 3.52PCh. 3 - For the twoinput NMOS NOR logic gate in Figure...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - Consider the circuit shown in Figure 3.50 in the...Ch. 3 - The gate and source of an nchannel depletionmode...Ch. 3 - For an nchannel JFET, the parameters are IDSS=6mA...Ch. 3 - A pchannel JFET biased in the saturation region...Ch. 3 - Prob. 3.60PCh. 3 - Prob. 3.61PCh. 3 - The threshold voltage of a GaAs MESFET is...Ch. 3 - Prob. 3.63PCh. 3 - Prob. 3.64PCh. 3 - Prob. 3.65PCh. 3 - For the circuit in Figure P3.66, the transistor...Ch. 3 - Prob. 3.67PCh. 3 - Prob. 3.68PCh. 3 - For the circuit in Figure P3.69, the transistor...Ch. 3 - Prob. 3.70PCh. 3 - Prob. 3.71PCh. 3 - Prob. 3.72PCh. 3 - Using a computer simulation, verify the results of...Ch. 3 - Consider the PMOS circuit shown in Figure 3.30....Ch. 3 - Consider the circuit in Figure 3.39 with a...Ch. 3 - Prob. D3.79DPCh. 3 - Consider the multitransistor circuit in Figure...
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- a. Illustrate any differences or similarities between BJT and FET. b. Draw the V-I characteristic of an ideal diode Model. c. Draw the circuit symbol of a common emitter configuration of an NPN transistor.arrow_forward• In MOSFET, it is the foundation upon which the device will be constructed and is formed from a silicon base A. Substrate, B. Slab, C. Source, D. Base.arrow_forwardWhat do each of the three terms in the MOSFET threshold voltage equation represent? ☐ built-in voltage ☐ voltage needed to achieve flat-band voltage due to band bending in semiconductor ☐ voltage across oxide ☐ breakdown voltagearrow_forward
- What is the channel in an n-type MOSFET formed of? a. Bound holes b. Mobile holes c. Bound electrons O d. depletion region O e. Mobile electronsarrow_forwarda) What are the types of BJT that exist according to their internal structure?b) How are the internal diodes of a BJT NPN connected?c) What is the formula that relates the 3 currents of the BJT?arrow_forwarda) Figure B3 shows a cross section for a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in diagrammatic form. (i) (ii) Sketch the energy band diagram for the MOSFET along the line X-Y shown in Figure B3 when bias voltages are applied such that the silicon surface is inverted. Label all important features of your sketch and state any assumptions made. Sketch a box plot showing the charges present in the structure when the silicon surface is inverted. Indicate the source of all the charges and state whether they are positive or negative. Source n+ Metal Silicon Substrate - p X dioxide Drain n*arrow_forward
- How can you replace a diode with a BJT. Could you also draw an example of circuit where the diode is replaced with a BJT?arrow_forwardA metal-oxide-semiconductor (MOS) structure is fabricated on an n-type Si substrate. What term is used to describe the surface condition of this MOS structure when negative voltage is applied at the gate?arrow_forwardWrite down and explain Shockley equation for drain current for JFET.arrow_forward
- Design the following MOSFET circuit for it to operate in saturation mode with 0.5 mA drain current. Determine Rp and dc voltage VĎ. Assume V₁ = 2 V and K = 0.1 mA/V² for this MOSFET. 10 V RD -VDarrow_forwardPlease describe how on PN junction works, in full detail. Thanksarrow_forwardFETs have similar properties to ___. a. Scotty diodes b. NPN transistors c. PNP transistors d. uni-junction transistorsarrow_forward
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How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License