5: Choose the correct answer! 1. The current in FET flows between terminals. (Drain and gate Drain and source Gate and source None of these) 2. The threshold voltage is in enhancement type metal oxide semiconductor field effect transistor. (Positive Negative Zero Positive) 3. The drift current density effected by (An electric filed Concentration gradient in holes • Concentration gradient in free All of these) trons

Introductory Circuit Analysis (13th Edition)
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Author:Robert L. Boylestad
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05: Choose the correct answer:
1. The current in FET flows between
terminals.
(Drain and gate
Drain and source
Gate and soarce
None of these)
2. The threshold voltage is
in enhancement type metal oxide semiconductor
field effect transistor.
(Positive
Negative
Zero
Positive)
3. The drift current density effected by
(An electric filed
• Concentration gradient in holes • Concentration gradient in free
electrons
All of these)
4. The band gap between conduction and valance band in an insulator is
(Low
Very low
High
Moderate)
5. Operating point of a transistor must be independent of
(Biasing
Amplification
Variations in parameters
Filtration)
6. When a transistor operating at the central of the load line is declining, the current gain
will change the Q-point
(down
up
nowhere
of the load line)
7. A bipolar junction transistor when used as a switch, operates in
(cut-off and active region
active and saturation region
cut-off and saturation
region
all of these)
8. Inversion layer in an MOS circuit is made by
(doping
impact ionization
tunnelling
electric field)
9. What are the applications of semiconductor devices?
(Microprocessors
Analog circuits
High voltage applications
All of these)
Transcribed Image Text:05: Choose the correct answer: 1. The current in FET flows between terminals. (Drain and gate Drain and source Gate and soarce None of these) 2. The threshold voltage is in enhancement type metal oxide semiconductor field effect transistor. (Positive Negative Zero Positive) 3. The drift current density effected by (An electric filed • Concentration gradient in holes • Concentration gradient in free electrons All of these) 4. The band gap between conduction and valance band in an insulator is (Low Very low High Moderate) 5. Operating point of a transistor must be independent of (Biasing Amplification Variations in parameters Filtration) 6. When a transistor operating at the central of the load line is declining, the current gain will change the Q-point (down up nowhere of the load line) 7. A bipolar junction transistor when used as a switch, operates in (cut-off and active region active and saturation region cut-off and saturation region all of these) 8. Inversion layer in an MOS circuit is made by (doping impact ionization tunnelling electric field) 9. What are the applications of semiconductor devices? (Microprocessors Analog circuits High voltage applications All of these)
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