Chapter 3, Problem 3.4EP

The transistor in Figure 3.26(a) has parameters $V_{TP}=-0.6\text{V}$ and $K_p=0.2{\text{mA/V}}^{\text{2}}$ . The circuit is biased at $V_{DD}=3.3\text{V}$ . Assume $R_1\parallel R_2=300\text{k}\Omega$ . Design the circuit such that $I_{DQ}=0.5\text{mA}$ and $V_{SDQ}=2.0\text{V}$ . (Ans. $R_1=885\text{k}\Omega$ , $R_2=454\text{k}\Omega$ , $R_D=2.6\text{k}\Omega$ )