For the inverter circuit shown in Figure 3.68, the n−channel enhancement−mode MESFET parameters are K n = 100 μ A/V 2 and V T N = 0.2 V . Determine the value of R D required to produce V O = 0.10 V when V I = 0.7 V . (Ans. R D = 267 k Ω ) Figure 3.68 Circuit for Exercise TYU 3.18
For the inverter circuit shown in Figure 3.68, the n−channel enhancement−mode MESFET parameters are K n = 100 μ A/V 2 and V T N = 0.2 V . Determine the value of R D required to produce V O = 0.10 V when V I = 0.7 V . (Ans. R D = 267 k Ω ) Figure 3.68 Circuit for Exercise TYU 3.18
Solution Summary: The author explains the value of the resistor R_D. The transistor will be biased in non-saturation region.
For the inverter circuit shown in Figure 3.68, the n−channel enhancement−mode MESFET parameters are
K
n
=
100
μ
A/V
2
and
V
T
N
=
0.2
V
. Determine the value of
R
D
required to produce
V
O
=
0.10
V
when
V
I
=
0.7
V
. (Ans.
R
D
=
267
k
Ω
)
3.7 A single-phase full-bridge inverter feeds power at 50 Hz to RLC load with R = 5 2,
L= 0.3 H and C = 50 µF. The DC input voltage is 220 V DC. (a) Find an expression for
load current up to the fifth harmonic. (b) Calculate the power absorbed by the load and
the fundamental power. (c) Calculate the RMS and peak currents of each thyristor.
3.8 Explain the working of a three-phase bridge inverter with an appropriate circuit
diagram. Draw phase and line voltage waveforms on the assumption that each thyristor
conducts for 180° and the resistive load is star connected.
3.9 Repeat Problem 3.7 in case each thyristor conducts for 120°.
3.10 Repeat Problem 3.7 in case the load is delta connected.
3.11 A star-connected load of 28 2 per phase is fed from 440-V DC source through a
three-phase bridge inverter. For both (a) 180° mode and (b) 120° mode, determine: (i)
RMS value of load current. (ii) RMS value of thyristor current. (iii) Load power
3.12 What is the need for controlling the voltage at…
An NMOStransistor is to be used as a power switchto disable one core of a multicore processor chipthat operates from a 2.5 V power supply. When thecore is enabled, its current is 4 A. What is the W/Lratio of the NMOS transistor if the voltage dropacross the transistor must be less than 100 mV? IfL = 1µm, estimate the area of the transistor.
1) what is the Voltage & Current rating ofTriode for Alternating Current (TRIAC)
2)
5. Are the following statements correct or wrong? Justify your answer.(a) Thyristors are used only for low voltage, low current applications.(b) MOSFETs are used for high frequency applications.(c) BJT is more efficient than IGBT in high power applications.(d) GTO requires very low current applied to its gate to be turn off.(e) IGBT is a voltage driven device.
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Power Inverters Explained - How do they work working principle IGBT; Author: The Engineering Mindset;https://www.youtube.com/watch?v=iIqhAX0I7lI;License: Standard Youtube License